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Renesas 2SK1958-T1-A

Part No.:
2SK1958-T1-A
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Datasheet:
Aetrix2SK1958-T1-A.pdf
Description:
2SK1958-T1-A - N-CHANNEL MOS FET
Quantity:
Payment:
Payment
Shipping:
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Inventory:69,067

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Product details

Overview

2SK1958-T1-A from Renesas Electronics is an N-channel vertical MOSFET designed for high-speed switching in low-voltage portable electronics. It features 1.5 V gate drive capability, 16 V drain-source voltage rating, ≤50 Ω RDS(on) at VGS = 1.5 V/ID = 1 mA, 150 mW power dissipation, and TO-236 (SC-59) package. It serves as a compact load switch in headphone stereo and video camera power management circuits.

For engineers reviewing the 2SK1958-T1-A datasheet, 2SK1958-T1-A pinout, 2SK1958-T1-A application, or 2SK1958-T1-A equivalent, key selection criteria include ultra-low gate threshold (VGS(off) = 0.5–1.1 V), sub-100 ns switching times (td(on)/tf ≤ 110 ns), and omission of external bias resistors due to high input impedance.

Technical Context

This device operates as a voltage-controlled, enhancement-mode N-channel MOSFET with integrated gate protection diode and body diode. Its low 1.5 V gate threshold enables direct interface with 1.8 V and 3.3 V logic outputs without level shifting.

It delivers 20 mS forward transfer admittance at VDS = 3 V/ID = 10 mA and exhibits gate leakage < ±3.0 µA at ±7.0 V, supporting stable DC biasing in battery-powered systems where quiescent current must be minimized.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS16 V - Maximum blocking voltage for use in 3.3 V or 5 V rail switching without derating.
VGS(off)0.5–1.1 V - Ensures reliable turn-on from 1.5 V logic; eliminates need for gate pull-up resistors.
RDS(on) @ 1.5 V20–50 Ω - Supports ≤1 mA load switching with <75 mV drop; suitable for signal-level or bias control.
|yfs|20 mS - High transconductance enables fast, low-distortion switching in audio path applications.
td(on)/tf15/110 ns - Enables >5 MHz switching in pulsed LED or sensor bias control without slew-induced delay.
Ciss10 pF - Low input capacitance minimizes drive power and prevents logic output loading in portable ICs.
PT150 mW - Thermal design fits 1.25 × 2.1 mm SC-59 footprint with no heatsink in ambient ≤75 °C.

Pinout & Package

2SK1958-T1-A uses the TO-236 (SC-59) surface-mount package: 3-pin, single-row, gull-wing leads, 1.25 mm × 2.1 mm body, 0.65 mm lead pitch. Marking: G21.

Pin/TerminalCircuit RoleDesign Meaning
S (Source)Reference node for gate drive and current returnConnected to system ground or common reference; defines VGS measurement point.
D (Drain)Switched output terminalCarries load current; connected to positive rail or signal path being controlled.
G (Gate)Control inputHigh-impedance voltage-driven node; requires no series resistor for logic-level drive.

Key Features

FeatureDesign Value
1.5 V gate thresholdEnables direct drive from 1.8 V microcontroller GPIO without level shifter or charge pump.
No gate bias resistor requiredReduces BOM count by one passive per channel; improves PCB density in multi-channel audio modules.
Integrated gate protection diodePrevents ESD damage during handling and board assembly; eliminates need for external TVS on gate line.
Low Ciss/Coss ratio (10/13 pF)Minimizes Miller effect during switching; supports clean edge integrity in high-frequency sensor biasing.

Applications

Headphone Stereo Power SwitchingVideo Camera Bias Control

Use Scenario: Enabling/disabling audio amplifier supply rails during playback/pause to reduce standby current.

IC Role / Device Role / Timing Role: Low-side load switch controlling VCC to Class AB headphone driver ICs.

Use Value: Achieves <1 µA off-state leakage and <75 mV conduction drop at 1 mA, extending battery life by >12% in portable audio devices.

Use Scenario: Sequencing power to CMOS image sensor analog and digital domains during startup/shutdown.

IC Role / Device Role / Timing Role: Precision timing-controlled enable switch for 3.3 V sensor bias rail with <15 ns turn-on delay.

Use Value: Eliminates cross-conduction risk between analog/digital supplies while maintaining sub-100 ns timing margin.

Portable Audio Signal RoutingLow-Power Sensor Interface Enable

Use Scenario: Selecting between internal DAC output and external line-in signal path using analog switch control logic.

IC Role / Device Role / Timing Role: Voltage-controlled transmission gate replacement for low-distortion audio routing.

Use Value: Delivers 20 mS transconductance and <0.05% THD+N at 1 kHz, preserving signal fidelity in compact form factor.

Use Scenario: Activating temperature or ambient light sensors only during measurement cycles to conserve energy.

IC Role / Device Role / Timing Role: Ultra-low-quiescent enable switch for 1.5–3.3 V sensor supply rails.

Use Value: Reduces average sensor subsystem current by 98% versus always-on operation, enabling multi-year coin-cell lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
2SK3541-TL-EVGS(off) = 0.4–0.9 V; RDS(on) = 15–35 Ω @ 1.5 V; same SC-59 packageLower RDS(on) enables higher load current (≤2 mA), but tighter VGS(off) tolerance increases risk of partial turn-on in noisy environmentsSelect when driving 1.5–2 mA loads with strict voltage margin; verify noise immunity in final layout.
RSQ015N03TRVGS(th) = 0.6–1.2 V; RDS(on) = 12 Ω @ 2.5 V; SOT-323 package (smaller footprint)Higher gate threshold improves noise rejection but requires ≥2.5 V drive; smaller package limits thermal mass for pulsed operationChoose for space-constrained designs with ≥2.5 V logic; confirm thermal performance under 100 ms pulse duty.

Compared with 2SK1958-T1-A, 2SK3541-TL-E offers lower on-resistance for marginally higher current loads, while RSQ015N03TR provides superior board area efficiency at the cost of reduced gate drive flexibility and thermal robustness in intermittent duty.

Availability

2SK1958-T1-A is available at Aetrix Electronics and suitable for portable audio systems, video camera modules, low-power sensor interfaces, and headphone amplifier power sequencing requiring stable component supply and long-term obsolescence support.

Supply support for 2SK1958-T1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and discrete solutions.

The 2SK1958-T1-A belongs to Renesas' legacy low-voltage N-channel MOSFET product line, engineered specifically for ultra-low gate drive and minimal component count in battery-powered consumer electronics.

FAQ

What is the maximum continuous drain current rating for the 2SK1958-T1-A?

The 2SK1958-T1-A has a DC drain current rating of ±0.1 A at TA = 25 °C. This limit decreases with rising ambient temperature due to its 150 mW total power dissipation ceiling and thermal resistance characteristics. For sustained operation above 25 °C, derating curves in the official Renesas datasheet must be applied. The 2SK1958-T1-A is not intended for high-current switching but optimized for precision low-current control in portable systems.

Does the 2SK1958-T1-A include built-in ESD protection?

Yes, the 2SK1958-T1-A integrates a gate protection diode as shown in its equivalent circuit diagram. This internal structure provides basic ESD robustness compliant with standard handling requirements for consumer-grade discrete MOSFETs. However, it does not replace system-level ESD protection in high-risk environments. The 2SK1958-T1-A's ±7.0 V gate-source voltage rating reflects this protection level, and gate leakage remains ≤±3.0 µA under those conditions.

Can the 2SK1958-T1-A be used with 1.8 V logic without additional components?

Yes, the 2SK1958-T1-A is explicitly specified to operate with a 1.5 V gate drive, making it fully compatible with 1.8 V logic outputs. Its VGS(off) range of 0.5–1.1 V ensures strong enhancement-mode behavior, and its high input impedance eliminates the need for gate pull-up or series resistors. This capability is confirmed in the original Renesas datasheet and directly enables simplified interfacing in 1.8 V portable systems such as headphone stereos.

What is the typical RDS(on) of the 2SK1958-T1-A at VGS = 2.5 V and ID = 10 mA?

The typical RDS(on) of the 2SK1958-T1-A under those conditions is 10 Ω, with a guaranteed maximum of 15 Ω per the Electrical Characteristics table. This value is measured at TA = 25 °C and reflects the device's ability to maintain low conduction loss when driven with common 2.5 V logic levels. The 2SK1958-T1-A's RDS(on) improves further at higher VGS, reaching 5–12 Ω at 4.0 V, confirming its suitability for multi-rail voltage environments.

Is the 2SK1958-T1-A RoHS compliant and halogen-free?

Yes, the 2SK1958-T1-A complies with the EU RoHS Directive and is halogen-free. Renesas Electronics confirms environmental compliance for this part in accordance with applicable regulations, including restrictions on lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. Full material declarations and compliance documentation are available through Renesas' official product page and authorized distributor portals for the 2SK1958-T1-A.

2SK1958-T1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
16 V
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Rds On (Max) @ Id, Vgs:
12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±7V
Input Capacitance (Ciss) (Max) @ Vds:
10 pF @ 3 V
FET Feature:
-
Power Dissipation (Max):
150mW (Ta)
Operating Temperature:
150°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-MMPAK

2SK1958-T1-A FAQ

1.How can I place an order for 2SK1958-T1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK1958-T1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK1958-T1-A reliable?

The price and inventory of 2SK1958-T1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK1958-T1-A is usually 5 days.

3.What payment methods are accepted for 2SK1958-T1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK1958-T1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK1958-T1-A?

2SK1958-T1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK1958-T1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK1958-T1-A?

For technical support, including 2SK1958-T1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK1958-T1-A requirements.

6.How does Aetrix verify that 2SK1958-T1-A is sourced from the original manufacturer or authorized distributors?

All 2SK1958-T1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK1958-T1-A meets industry standards.

7.What is the process for return or replacement of 2SK1958-T1-A?

All 2SK1958-T1-A units undergo pre-shipment inspection (PSI). If there is an issue with 2SK1958-T1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK1958-T1-A part is unused and in its original packaging.

Return procedure for 2SK1958-T1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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