Renesas 2SK2059L-E

Overview

2SK2059L-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC–DC converters and switching regulators. It features 600 V drain-to-source voltage rating, 3 A continuous drain current, 5.0 Ω maximum R_DS(on) at V_GS = 10 V, 20 W channel dissipation, and DPAK(L)-(1) surface-mount package with 4-terminal drain configuration.

For engineers reviewing the 2SK2059L-E datasheet, 2SK2059L-E pinout, 2SK2059L-E application, or 2SK2059L-E equivalent, key selection criteria include its 600 V blocking capability, low gate charge (Q_g not specified but implied by fast t_d(on)/t_d(off)), body diode reverse recovery time of 220 ns, and suitability for industrial power supplies where secondary breakdown immunity is required.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for high-voltage switching with no secondary breakdown limitation-enabling robust operation under inductive load conditions. Its gate threshold voltage range (2.0–3.0 V) ensures reliable turn-on with standard 10 V gate drive while maintaining low leakage (I_DSS ≤ 100 µA at 500 V).

Thermal performance is defined by θ_ch–c = 0.625 °C/W and T_ch = 150 °C maximum, supporting stable operation at case temperatures up to 75 °C before derating begins. The device's C_iss = 295 pF and Cr_ss = 12 pF support efficient high-frequency switching in hard-switched topologies.

Key Specifications

Pinout & Package

2SK2059L-E uses the DPAK(L)-(1) package (RENESAS code PRSS0004ZD-A), a 4-pin surface-mount variant of DPAK with dual drain terminals for enhanced thermal and current handling. Package dimensions: 16.2 × 5.5 × 3.1 mm (L × W × H), mass 0.42 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP6NK60ZFP and IXTP50N10P, the 2SK2059L-E uniquely balances 600 V capability, SMT packaging, and 3 A continuous current in a thermally enhanced DPAK(L)-(1), making it optimal for space-constrained industrial power supplies requiring no secondary breakdown limitation.

Availability

2SK2059L-E is available at Aetrix Electronics and suitable for AC–DC adapters, industrial DC–DC bias converters, LED driver flyback stages, and UPS hold-up circuits requiring stable component supply and long-lifecycle support.

Supply support for 2SK2059L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The 2SK2059L-E belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for reliability-critical offline power conversion where SOA robustness and consistent parametric stability across temperature are mandatory.

FAQ

What is the maximum continuous drain current rating for the 2SK2059L-E?

The 2SK2059L-E has a maximum continuous drain current (I_D) rating of 3 A at T_c = 25 °C. This rating decreases with increasing case temperature due to thermal derating-down to approximately 1.5 A at T_c = 75 °C. The device also supports 6 A peak drain current (I_D(pulse)) for pulses ≤10 µs at ≤1% duty cycle, making it suitable for transient-heavy applications like hold-up switching.

Does the 2SK2059L-E have a built-in body diode, and what are its characteristics?

Yes, the 2SK2059L-E integrates a body diode between source and drain. Its forward voltage (V_DF) is 0.9 V at I_F = 3 A and V_GS = 0, and its reverse recovery time (t_rr) is 220 ns under test conditions of I_F = 3 A, di_F/dt = 100 A/µs, and V_GS = 0. These parameters make the 2SK2059L-E usable as a freewheeling element in low-power flyback or forward converters without an external diode.

What package type does the 2SK2059L-E use, and how many pins does it have?

The 2SK2059L-E uses the DPAK(L)-(1) surface-mount package (RENESAS code PRSS0004ZD-A), which has four terminals: Gate (pin 1), Drain (pin 2), Source (pin 3), and second Drain (pin 4). The dual-drain configuration improves thermal conduction and reduces package inductance compared to standard 3-pin DPAK variants, and the package measures 16.2 × 5.5 × 3.1 mm.

Is the 2SK2059L-E rated for automotive or safety-critical applications?

No-the 2SK2059L-E is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, communications gear, and industrial robots. It is not qualified for automotive, medical life-support, aerospace, or nuclear applications. For such uses, explicit written consent from Renesas Electronics is required, and alternative AEC-Q101 or ASIL-rated components must be selected instead of the 2SK2059L-E.

How does the 2SK2059L-E differ from the 2SK2059S variant?

The 2SK2059L-E uses the DPAK(L)-(1) package (PRSS0004ZD-A), while the 2SK2059S uses the smaller DPAK(S) package (PRSS0004ZD-C). Both share identical electrical specifications-including V_DSS = 600 V, R_DS(on) max = 5.0 Ω, and t_rr = 220 ns-but differ in thermal performance: the L-version has higher mass (0.42 g vs. 0.28 g) and lower thermal resistance (θ_ch–c = 0.625 °C/W), making the 2SK2059L-E preferable for sustained 3 A operation.