Renesas 2SK2084L-E

Overview

2SK2084L-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC–DC converters and switching regulators. It features 20 V drain-to-source voltage rating, 7 A continuous drain current, 0.058 Ω R_DS(on) at V_GS = 4 V, 15 ns turn-on delay, and DPAK(L)-(2) surface-mount package with four-terminal drain configuration.

For engineers reviewing the 2SK2084L-E datasheet, 2SK2084L-E pinout, 2SK2084L-E application, or 2SK2084L-E equivalent, key selection criteria include low gate drive requirement (4 V compatible), fast switching performance (tr = 60 ns, tf = 80 ns), integrated body diode with 80 ns reverse recovery time, and thermal design support via 6.25°C/W channel-to-case thermal resistance.

Technical Context

This MOSFET operates as a single N-channel enhancement-mode switch optimized for synchronous rectification and primary-side switching in compact, high-efficiency power supplies. Its 0.04 Ω typical R_DS(on) at V_GS = 10 V and 4 A enables low conduction loss, while 800 pF input capacitance and 165 pF reverse transfer capacitance support stable gate driving at MHz-range frequencies.

The device integrates a body diode rated for 7 A reverse current and 0.9 V forward voltage at 7 A, enabling freewheeling operation without external diodes in buck or flyback topologies. Its 150°C maximum channel temperature and pulse-rated 28 A peak drain current accommodate transient load demands in regulated power stages.

Key Specifications

Pinout & Package

2SK2084L-E uses the DPAK(L)-(2) package (Renesas code PRSS0004ZD-B), a 4-pin surface-mount variant of the DPAK family with dual drain terminals for enhanced current handling and thermal spreading. The package measures 16.2 mm × 4.7 mm × 2.29 mm and weighs 0.42 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with ROHM RQ1C050BN and ON Semiconductor NTMFS4C09NT1G, the 2SK2084L-E uniquely balances 4 V logic-level drive, dual-drain thermal robustness, and 7 A continuous rating-making it optimal for cost-sensitive, thermally constrained 20 V-class DC–DC converters where gate drive simplicity and reliability are prioritized over ultra-low R_DS(on).

Availability

2SK2084L-E is available at Aetrix Electronics and suitable for USB-C power adapters, industrial 24 V DC–DC converters, and automotive infotainment power modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for 2SK2084L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The 2SK2084L-E belongs to Renesas' legacy silicon MOSFET product line targeting high-efficiency, medium-power switching applications-designed specifically for cost-effective, thermally resilient DC–DC conversion in consumer and industrial power supplies.

FAQ

What is the maximum gate-to-source voltage rating for the 2SK2084L-E?

The 2SK2084L-E has a maximum gate-to-source voltage rating of ±20 V. This specification defines the absolute limit beyond which gate oxide integrity may be compromised. Operation within ±16 V is recommended for long-term reliability, as IGSS leakage remains ≤±10 µA at that bias. Exceeding ±20 V-even momentarily-risks irreversible gate damage. Always use clamping or zener protection in circuits with inductive gate traces or hot-swap conditions.

Does the 2SK2084L-E have an integrated body diode, and what are its key parameters?

Yes, the 2SK2084L-E includes an integrated body diode between source and drain. Its key parameters are 7 A reverse current rating (IDR), 0.9 V forward voltage at 7 A (VDF), and 80 ns reverse recovery time (trr) under IF = 7 A and diF/dt = 20 A/µs. These values are measured with VGS = 0 and confirm suitability for freewheeling and synchronous rectification in buck, flyback, and forward converters without external diode supplementation.

What is the thermal resistance from channel to case (θch–c) for the 2SK2084L-E?

The channel-to-case thermal resistance (θch–c) for the 2SK2084L-E is 6.25°C/W, specified at Tc = 25°C. This value is derived from the normalized transient thermal impedance curve and applies to steady-state conduction when the case is maintained at 25°C. For real-world PCB layouts, effective thermal resistance depends on copper area, thickness, and solder coverage-designers should verify junction temperature using θj–a or θj–c models with actual board construction.

Can the 2SK2084L-E be driven directly by a 3.3 V microcontroller GPIO pin?

No, the 2SK2084L-E cannot be reliably driven by a 3.3 V GPIO pin. Its gate threshold voltage (VGS(off)) ranges from 1.0 V to 2.5 V, but full enhancement requires ≥4 V to achieve the specified 0.058 Ω RDS(on). At 3.3 V, RDS(on) increases significantly-exceeding 0.1 Ω-and switching speed degrades. A gate driver or level shifter is required for robust operation with 3.3 V logic. The "4 V gate drive" feature refers to minimum functional drive-not 3.3 V compatibility.

What is the difference between the 2SK2084L-E and 2SK2084S variants?

The 2SK2084L-E uses the DPAK(L)-(2) package (Renesas code PRSS0004ZD-B) with 16.2 mm length and dual drain terminals, while the 2SK2084S uses the smaller DPAK(S) package (PRSS0004ZD-C) measuring 5.4 mm in length and featuring a single drain terminal. Both share identical electrical specifications-including VDSS, ID, RDS(on), and switching times-but differ in thermal performance and current-handling capability due to package geometry and terminal count. The L-E variant supports higher continuous current in thermally demanding applications.