Renesas 2SK2111-T1-AY
- Part No.:
- 2SK2111-T1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK2111-T1-AY.pdf
- Description:
- SMALL SIGNAL N-CHANNEL MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:2,500
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Product details
Overview
2SK2111-T1-AY from Renesas Electronics is an N-channel vertical MOSFET designed for high-speed switching in low-voltage logic-driven circuits. It features RDS(on) ≤ 0.6 Ω at VGS = 4.0 V and ID = 0.5 A, ton + toff < 100 ns, and operates up to 60 V VDSS, making it suitable for DC/DC converter power switches and small motor drivers.
For engineers reviewing the 2SK2111-T1-AY datasheet, 2SK2111-T1-AY pinout, 2SK2111-T1-AY application, or 2SK2111-T1-AY equivalent, key selection criteria include gate-threshold compatibility with 5 V CMOS outputs, safe operating area under pulsed 2.0 A loads, thermal derating on ceramic substrates, and absence of integrated gate protection diodes beyond internal ESD structures.
Technical Context
This discrete power MOSFET uses a vertical DMOS structure optimized for fast turn-on/turn-off with minimal overlap between conduction and voltage transition phases. Its low Ciss (170 pF) and Crss (32 pF) at VDS = 10 V support stable high-frequency switching without excessive gate drive loss.
The device lacks built-in avalanche rating or guaranteed unclamped inductive switching capability. Its gate threshold voltage VGS(off) ranges from 0.8 V to 2.0 V, requiring careful biasing to avoid partial enhancement in noise-prone environments, especially when driven directly from microcontroller GPIOs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum drain-source blocking voltage; defines upper limit for DC/DC flyback or buck switch node voltage swing. |
| RDS(on) @ 4 V | 0.6 Ω max - Ensures ≤300 mW conduction loss at 0.5 A DC, enabling use without heatsinking in space-constrained converters. |
| ton + toff | <100 ns - Supports PWM operation up to ~5 MHz in non-resonant topologies before timing uncertainty dominates. |
| Ciss | 170 pF - Determines required gate charge (Qg ≈ 12 nC typical) and driver strength for 10 Ω RG test condition. |
| ID(pulse) | 2.0 A - Valid for ≤10 ms pulses at ≤50% duty cycle; enables short-term surge handling in motor startup or load dump scenarios. |
| PT | 2.0 W - Rated on 16 cm² × 0.7 mm ceramic substrate; derates linearly above 25 °C ambient per published curve. |
Pinout & Package
2SK2111-T1-AY is housed in a TO-236AB (SC-59) surface-mount package with gull-wing leads, marked "NU". The package measures 4.5 × 2.5 × 1.6 mm and is rated for reflow soldering per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | High-impedance MOS control terminal; requires external series resistor (≥10 Ω) to damp ringing during fast edge transitions. |
| D | Drain | Main current-carrying terminal connected to high-side switching node; internally tied to substrate and exposed drain pad. |
| S | Source | Reference terminal for gate drive and current return path; connects to ground or low-side return in common-source configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Direct 5 V IC drive compatibility | Guaranteed turn-on with standard TTL/CMOS logic outputs due to VGS(th) ≤ 2.0 V and low RDS(on) at 4 V. |
| Low output capacitance | Coss = 87 pF minimizes energy loss during hard-switching transitions and reduces EMI generation. |
| Fast switching speed | td(on) = 2.8 ns and tf = 27 ns enable clean square-wave edges in gate-driver-limited applications. |
| Thermal stability | RDS(on) exhibits <50% variation from –25 °C to +75 °C, supporting consistent performance across industrial temperature range. |
Applications
| Brushless DC Fan Control | USB-Powered DC/DC Converter |
|---|---|
Use Scenario: Driving 12 V, 0.8 A BLDC fan in portable medical analyzers where acoustic noise and EMI must be minimized. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in 3-phase inverter half-bridge stage, commutated at 20 kHz. Use Value: RDS(on) ≤ 0.45 Ω at 10 V ensures <360 mW conduction loss per phase, reducing thermal load on compact PCB layout. | Use Scenario: Step-down switch in isolated 5 V-to-3.3 V USB-powered buck converter for IoT sensor nodes. IC Role / Device Role / Timing Role: Primary power switch operating at 500 kHz with 40% duty cycle, driven by integrated controller's gate output. Use Value: Ciss/Crss ratio of 5.3:1 maintains stable duty-cycle control without shoot-through risk under light-load conditions. |
| Industrial PLC Output Module | Automotive Body Control Unit |
Use Scenario: Solid-state replacement for electromechanical relays controlling 24 V solenoid valves in factory automation panels. IC Role / Device Role / Timing Role: High-side load switch with external level-shifting gate driver, activated for ≤500 ms pulses. Use Value: ID(pulse) = 2.0 A supports 1.5× inrush current of 24 V/1.2 W solenoids without thermal runaway on FR4 with 2 oz copper. | Use Scenario: Powering LED map lights and door courtesy lamps in 12 V automotive cabins with reverse-polarity protection. IC Role / Device Role / Timing Role: Low-side switch in constant-current LED driver with PWM dimming input. Use Value: VGS(off) ≥ 0.8 V prevents false turn-on from battery ripple or CAN bus transients, improving system robustness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | RDS(on) = 0.45 Ω @ 4.5 V; higher Ciss (220 pF); SOT-23 package | Optimized for ultra-compact layouts but limited to 1.2 W PT; not rated for >1.5 A pulse | Select when board space is critical and peak current ≤1.2 A; verify gate drive rise time with higher Ciss. |
| AO3400 | RDS(on) = 0.042 Ω @ 10 V; lower VGS(th) (0.7–1.4 V); SO-8 package | Higher current capacity (5.7 A) but larger footprint and slower tf (25 ns vs. 27 ns); no published Crss spec | Select when lower conduction loss at high ID is prioritized over switching speed and board area. |
Compared with 2SK2111-T1-AY, DMN2004LK-7 trades pulse current headroom for smaller size, while AO3400 sacrifices switching speed and layout efficiency for significantly lower RDS(on)-making each suitable only where its specific parameter advantage aligns with system-level constraints.
Availability
2SK2111-T1-AY is available at Aetrix Electronics and suitable for industrial PLC output modules, USB-powered DC/DC converters, and brushless DC fan control systems requiring stable component supply and long-term obsolescence management.
Supply support for 2SK2111-T1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial and consumer applications.
The 2SK2111-T1-AY belongs to Renesas' legacy discrete MOSFET product line, engineered specifically for cost-sensitive, medium-power switching tasks where 5 V logic compatibility and fast transient response are essential.
FAQ
What is the maximum continuous drain current rating for the 2SK2111-T1-AY?
The 2SK2111-T1-AY has a continuous drain current rating of ±1.0 A at TA = 25 °C on a specified ceramic substrate. This rating drops with rising ambient temperature per the published derating curve, reaching zero at approximately 125 °C ambient. For reliable operation, design must ensure junction temperature stays below 150 °C using actual board layout thermal resistance and measured power dissipation. The 2SK2111-T1-AY does not specify a Safe Operating Area (SOA) graph for linear-mode operation.
Does the 2SK2111-T1-AY include integrated gate protection diodes?
The 2SK2111-T1-AY includes internal gate protection diodes as shown in the equivalent circuit diagram, but these are ESD-rated only-not intended for sustained overvoltage clamping. The absolute maximum gate-to-source voltage is ±20 V, and exceeding this-even briefly-can cause irreversible gate oxide damage. External Zener clamps are recommended if the 2SK2111-T1-AY is used in noisy environments or with inductive gate traces. No TVS or transient suppressor is integrated into the 2SK2111-T1-AY die.
Can the 2SK2111-T1-AY be used in avalanche mode?
No, the 2SK2111-T1-AY is not rated for avalanche energy or unclamped inductive switching. Its datasheet omits avalanche SOA curves, rated single-pulse avalanche energy (EAS), or repetitive avalanche specifications. Using the 2SK2111-T1-AY in circuits with significant inductive kickback-such as relay or solenoid driving without snubbers-risks catastrophic failure. Always implement external clamping (e.g., TVS or RCD snubber) when inductive loads are switched by the 2SK2111-T1-AY.
What is the gate threshold voltage range for the 2SK2111-T1-AY?
The gate threshold voltage VGS(off) for the 2SK2111-T1-AY is specified from 0.8 V to 2.0 V at ID = 1 mA and VDS = 10 V. This wide range means individual units may turn on fully at as low as 2.5 V or require up to 3.5 V for reliable enhancement. System designs using the 2SK2111-T1-AY must account for this variation-especially when driven from marginal 3.3 V logic-by verifying turn-on margin across temperature and process corners.
Is the 2SK2111-T1-AY RoHS compliant?
Yes, the 2SK2111-T1-AY complies with the EU RoHS Directive, as confirmed by Renesas Electronics' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits. RoHS status applies to all manufacturing lots shipped after June 2006, and the 2SK2111-T1-AY carries the "RoHS compliant" marking on its packaging and data sheet revision history.
2SK2111-T1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK2111-T1-AY FAQ
1.How can I place an order for 2SK2111-T1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK2111-T1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK2111-T1-AY reliable?
The price and inventory of 2SK2111-T1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2111-T1-AY is usually 5 days.
3.What payment methods are accepted for 2SK2111-T1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2111-T1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK2111-T1-AY?
2SK2111-T1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK2111-T1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK2111-T1-AY?
For technical support, including 2SK2111-T1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2111-T1-AY requirements.
6.How does Aetrix verify that 2SK2111-T1-AY is sourced from the original manufacturer or authorized distributors?
All 2SK2111-T1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2111-T1-AY meets industry standards.
7.What is the process for return or replacement of 2SK2111-T1-AY?
All 2SK2111-T1-AY units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2111-T1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK2111-T1-AY part is unused and in its original packaging.
Return procedure for 2SK2111-T1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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