Renesas 2SK2114-E

Overview

2SK2114-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching regulator applications. It features 450 V drain-to-source breakdown voltage, 1.0 Ω typical R_DS(on) at V_GS = 10 V and I_D = 2.5 A, 20 A peak drain current, and low gate charge enabling fast turn-on/turn-off with minimal drive current. Its TO-220CFM package supports robust thermal dissipation in offline SMPS designs.

For engineers reviewing the 2SK2114-E datasheet, 2SK2114-E pinout, 2SK2114-E application, or 2SK2114-E equivalent, key selection criteria include safe operating area (SOA) compliance at 360 V DC bus, body diode reverse recovery time (t_rr = 300 ns), and static on-resistance stability across –40°C to 125°C case temperature - critical for flyback and forward converter primary-side switches.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for ruggedness and absence of secondary breakdown, allowing reliable operation under repetitive avalanche and hard-switching conditions. Its gate threshold voltage (V_GS(off) = 2.0–3.0 V) ensures clean turn-off with standard 5 V logic-level gate drivers when used with appropriate negative bias or active pull-down.

The device integrates an intrinsic body diode with V_DF = 0.95 V at I_F = 5 A and t_rr = 300 ns under di/dt = 100 A/µs, supporting synchronous rectification in quasi-resonant topologies and reducing snubber losses in clamp circuits. Its C_iss/C_oss/C_rss values (640 pF / 160 pF / 20 pF at V_DS = 10 V) enable predictable EMI behavior in 50–500 kHz switching applications.

Key Specifications

Pinout & Package

2SK2114-E uses the TO-220CFM (RENESAS code PRSS0003AE-A) package: insulated tab, vertical mounting, 3-pin single-ended configuration with integral heatsink interface. The plastic body provides creepage/clearance compliant with IEC 60950-1 for 300 V working voltage.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP4NK50ZFP and IXTP12N50D2, the 2SK2114-E offers verified safe operating area up to 360 V and documented 300 ns body diode recovery - making it uniquely suitable for cost-sensitive, reliability-critical offline SMPS where SOA compliance and diode performance are jointly constrained.

Availability

2SK2114-E is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for 2SK2114-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK2114-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for rugged, high-reliability switching regulator applications in industrial and commercial power conversion systems.

FAQ

What is the maximum continuous drain current rating for the 2SK2114-E?

The 2SK2114-E has a continuous drain current (I_D) rating of 5 A at T_c = 25°C. This value derates linearly with increasing case temperature, reaching approximately 2.5 A at T_c = 100°C. For reliable operation, the 2SK2114-E must be mounted on a heatsink capable of maintaining T_c ≤ 85°C under full-load conditions in the target application environment.

Does the 2SK2114-E have a fully characterized body diode for synchronous rectification?

Yes, the 2SK2114-E includes a fully specified intrinsic body diode with forward voltage V_DF = 0.95 V at I_F = 5 A and reverse recovery time t_rr = 300 ns under di/dt = 100 A/µs. These parameters are measured and guaranteed per the official Renesas datasheet Rev.2.00, enabling accurate loss modeling in flyback and forward converter secondary-side implementations using the 2SK2114-E.

Can the 2SK2114-E be driven directly by a 3.3 V microcontroller GPIO?

No - the 2SK2114-E has a gate threshold voltage V_GS(off) of 2.0–3.0 V and requires ≥10 V V_GS to achieve its specified 1.0 Ω R_DS(on). A 3.3 V GPIO cannot fully enhance the device and will result in excessive conduction loss and thermal runaway. The 2SK2114-E must be driven by a dedicated gate driver or level-shifting circuit providing 10–15 V gate voltage with sufficient peak current capability.

Is the 2SK2114-E RoHS compliant and lead-free?

Yes, the 2SK2114-E is RoHS compliant and lead-free per EU Directive 2011/65/EU. Renesas confirms this status in its official product documentation and environmental compliance reports. The TO-220CFM package uses matte tin plating on leads and halogen-free molding compound, meeting both RoHS and JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount reflow compatibility.

What is the safe operating area (SOA) limit for the 2SK2114-E at 200 V V_DS?

At V_DS = 200 V, the 2SK2114-E's SOA limits continuous DC operation to ≤2.5 A and pulse operation (PW ≤ 10 µs, duty ≤ 1%) to ≤10 A, as defined by the maximum channel dissipation (P_ch = 35 W) and thermal resistance constraints. These boundaries are graphically confirmed in Figure 2 ("Maximum Safe Operation Area") of the Renesas 2SK2114-E datasheet Rev.2.00, ensuring design margin against thermal runaway during transient overloads.