Renesas 2SK2225-E

Overview

2SK2225-E from Renesas Electronics is a high-voltage N-channel power MOSFET designed for high-speed switching in off-line power supplies and DC-DC converters. It delivers 1500 V drain-source breakdown voltage, 2 A continuous drain current, and 9 Ω typical R_DS(on) at V_GS = 15 V, enabling robust operation in flyback and forward converter primary-side switches.

For engineers reviewing the 2SK2225-E datasheet, 2SK2225-E pinout, 2SK2225-E application, or 2SK2225-E equivalent, key selection criteria include its 1500 V V_DSS, absence of secondary breakdown, low gate drive current requirement, and suitability for high-reliability industrial switching regulators operating up to 150 °C channel temperature.

Technical Context

This device employs a planar vertical DMOS structure optimized for high-voltage blocking and fast switching. Its gate threshold voltage (V_GS(off)) ranges from 2.0 to 4.0 V, ensuring reliable turn-on with standard 15 V gate drivers while maintaining low leakage (I_DSS ≤ 500 µA at 1200 V).

Switching performance is characterized by 17 ns turn-on delay, 50 ns rise time, 150 ns turn-off delay, and 50 ns fall time under 1 A load and 30 Ω gate resistance - critical for minimizing conduction and switching losses in high-frequency SMPS designs.

Key Specifications

Pinout & Package

2SK2225-E uses the TO-3PFM package (RENESAS code PRSS0003ZA-A, JEITA SC-93), a through-hole metal-can package with insulated base, rated for high-voltage isolation and high-power dissipation. Its compact 21.0 mm × 19.9 mm footprint and 5.2 g mass support mechanical stability in industrial power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW12NK150Z and IXTP1R1N150, the 2SK2225-E offers optimal balance of 2 A current handling, 9 Ω on-resistance, and TO-3PFM mechanical robustness for mid-power industrial SMPS - making it ideal where board space, thermal interface simplicity, and 1500 V reliability are jointly critical.

Availability

2SK2225-E is available at Aetrix Electronics and suitable for industrial flyback converters, AC-DC power adapters, and DC-DC boost pre-regulators requiring stable component supply across extended production lifecycles.

Supply support for 2SK2225-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The 2SK2225-E belongs to Renesas' high-voltage discrete MOSFET product line, engineered specifically for ruggedized off-line power conversion in industrial equipment where reliability under high-voltage stress and thermal cycling is essential.

FAQ

What is the maximum gate-to-source voltage rating for the 2SK2225-E?

The 2SK2225-E has a maximum gate-to-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this voltage risks permanent gate oxide damage. Designers must ensure gate drive circuits - including transient clamping and bootstrap networks - remain within this limit during all operating and fault conditions. The 2SK2225-E's gate threshold voltage range (2.0–4.0 V) allows safe operation with 15 V nominal drive while preserving margin against overshoot.

Does the 2SK2225-E include an integrated body diode, and what are its characteristics?

Yes, the 2SK2225-E integrates a body diode between source and drain. Its forward voltage is 0.9 V at 2 A and zero gate bias, and its reverse recovery time (t_rr) is 1750 ns under specified test conditions (I_F = 2 A, di_F/dt = 100 A/µs). This diode enables freewheeling in flyback and forward converters but is not optimized for synchronous rectification due to its relatively long recovery time. The 2SK2225-E datasheet confirms these parameters on page 2 under Electrical Characteristics.

Can the 2SK2225-E be used in avalanche-rated applications?

No, the 2SK2225-E is not rated or characterized for repetitive avalanche operation. Its Absolute Maximum Ratings specify only single-pulse drain current (I_D(pulse) = 7 A) and channel dissipation (P_ch = 50 W at T_c = 25 °C), with no avalanche energy (E_AS) or repetitive avalanche specifications provided. Applications subject to voltage transients exceeding 1500 V must use external clamping (e.g., TVS diodes or RCD snubbers) rather than relying on the 2SK2225-E's intrinsic avalanche capability.

What is the thermal resistance from channel to case (θ_ch-c) for the 2SK2225-E?

The 2SK2225-E has a channel-to-case thermal resistance (θ_ch-c) of 2.50 °C/W, as stated in the Transient Thermal Impedance chart on page 5 of the datasheet. This value applies under DC operation at T_c = 25 °C and is used to calculate junction temperature rise above case temperature. When designing heatsinks, engineers must combine this with the heatsink-to-ambient thermal resistance and ambient temperature to ensure the 2SK2225-E's channel temperature remains ≤150 °C under worst-case load and airflow conditions.

Is the 2SK2225-E compliant with RoHS and lead-free assembly requirements?

Yes, the 2SK2225-E meets RoHS Directive 2011/65/EU requirements and is lead-free compatible. Renesas Electronics confirms environmental compliance in the "General Notes" section of the datasheet (page 6), advising users to consult the latest reliability handbook and material declarations for detailed substance data. The device supports standard Pb-free reflow profiles (J-STD-020), and its TO-3PFM package plating is qualified for lead-free soldering processes without risk of delamination or voiding.