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Renesas 2SK2315TYTR-E
- Part No.:
- 2SK2315TYTR-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-243AA
- Datasheet:
-
2SK2315TYTR-E.pdf
- Description:
- MOSFET N-CH 60V 2A UPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,290
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Product details
Overview
2SK2315TYTR-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters, motor drives, and solenoid control circuits. It features 60 V VDSS, 2 A continuous drain current, 0.4 Ω RDS(on) at VGS = 4 V, and operates with low drive current - compatible with 3 V logic-level gate drive.
For engineers reviewing the 2SK2315TYTR-E datasheet, 2SK2315TYTR-E pinout, 2SK2315TYTR-E application, or 2SK2315TYTR-E equivalent, this device is selected where fast turn-on/turn-off (21 ns ton, 85 ns toff), low conduction loss, and compact UPAK (SC-62) surface-mount packaging are required in space-constrained industrial and consumer power stages.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for low gate charge (Qg ≈ 10 nC typical) and minimized output capacitance (Coss = 85 pF), enabling efficient high-frequency switching up to several hundred kHz. Its threshold voltage range (VGS(off) = 0.5–1.5 V) ensures reliable enhancement-mode operation with stable turn-on margin across temperature.
The device integrates an intrinsic body diode rated for 2 A reverse drain current (IDR) and exhibits low forward voltage drop (VSD ≈ 1.2 V at ID = 2 A), supporting synchronous rectification and freewheeling in buck and H-bridge topologies without external diode addition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage in off-state; suitable for 48 V bus and 24 V industrial systems. |
| ID (continuous) | 2 A - Continuous drain current at Tc = 75°C on alumina ceramic board; defines steady-state load capability. |
| RDS(on) | 0.45 Ω max at VGS = 4 V - Conduction loss of ≤1.8 W at 2 A; enables thermally manageable operation in small footprint. |
| ton/toff | 21 ns / 85 ns - Fast switching transitions reduce switching losses in PWM applications above 100 kHz. |
| Ciss/Coss | 173 pF / 85 pF - Low input/output capacitance minimizes gate drive power and improves EMI profile. |
| VGS(th) | 0.5–1.5 V - Guaranteed turn-on with 2.5 V logic; supports direct interface with 3 V microcontrollers and gate drivers. |
| Pch | 1 W - Channel dissipation limit on 12.5 × 20 × 0.7 mm alumina board; sets thermal design boundary for PCB layout. |
Pinout & Package
2SK2315TYTR-E is housed in the UPAK (SC-62) package - a 4-pin, surface-mount, leadless plastic package (RENESAS code PLZZ0004CA-A) with dual-drain configuration for enhanced thermal and current handling. Dimensions: 4.5 × 2.5 × 1.8 mm (L × W × H), mass ≈ 0.050 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate-source voltage; low input capacitance (Ciss = 173 pF) reduces driver loading. |
| 2 (D) | Drain | Main high-side power terminal; electrically connected to pin 4; used for switching node connection in buck or half-bridge. |
| 3 (S) | Source | Power return and reference node; tied to ground or low-side switch; defines VGS control reference. |
| 4 (D) | Drain (second) | Second drain terminal - internally bonded to pin 2; improves current sharing and thermal spreading in PCB copper pour. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 2.5 V - eliminates need for level-shifting or dedicated gate drivers in 3 V systems. |
| Dual-drain thermal path | Two drain pins reduce package resistance and improve heat transfer to PCB copper, supporting higher pulse currents (ID(pulse) = 4 A). |
| Low Qg and Coss | Typical gate charge ~10 nC and Coss = 85 pF - lowers switching energy loss and eases EMI filtering requirements. |
| Integrated body diode | Rated for 2 A reverse current with VSD ≤ 1.2 V - enables self-contained freewheeling in inductive loads without external diode. |
| High-speed switching | 21 ns turn-on and 85 ns turn-off times - supports high-frequency DC-DC operation while maintaining efficiency >90% at 200 kHz. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Step-down voltage regulation in portable instrumentation and embedded power supplies with 12–48 V input and 3.3/5/12 V output. IC Role / Device Role / Timing Role: High-side synchronous switch in fixed-frequency PWM topology; handles 2 A continuous load with minimal conduction loss. Use Value: RDS(on) ≤ 0.45 Ω at 4 V gate drive reduces I²R loss to <1.8 W, allowing operation without heatsink on standard FR-4 with 2 oz copper. |
Use Scenario: Unidirectional drive for 12 V/24 V brushed motors in HVAC actuators, printer mechanisms, and robotic joints. IC Role / Device Role / Timing Role: Low-side or high-side power switch controlled by MCU GPIO or dedicated driver IC; commutated at ≤20 kHz. Use Value: Fast 21 ns ton minimizes dead-time loss; integrated body diode provides safe inductive kickback path during PWM off-cycle. |
| Solenoid Control Module | Industrial Power Switch |
|
Use Scenario: On/off control of 24 V solenoid valves in factory automation, fluid control panels, and pneumatic systems. IC Role / Device Role / Timing Role: Single-pole power switch interfaced directly to 3 V logic; driven with brief 100 ms pulses or sustained DC. Use Value: VGS(th) as low as 0.5 V ensures robust turn-on even with marginal gate drive; 60 V rating accommodates 2× supply transients. |
Use Scenario: Solid-state replacement for mechanical relays in programmable logic controller (PLC) output modules and sensor interface cards. IC Role / Device Role / Timing Role: Load-switching element controlling 24 V/48 V DC loads up to 2 A; operated with TTL-compatible control signals. Use Value: Dual-drain terminals enhance current derating margin and solder-joint reliability under thermal cycling in industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RQ7E050AT | 60 V VDSS, 5 A ID, 0.045 Ω RDS(on) at VGS = 4.5 V; larger TSMT6 package (3.0 × 3.0 mm). | Higher current capacity and lower RDS(on); suited for upgraded 5 A designs but requires PCB layout change. | Select when higher continuous current or lower conduction loss is prioritized over footprint size. |
| ON Semiconductor NTMFS4C09NT1G | 30 V VDSS, 12 A ID, 0.0075 Ω RDS(on) at VGS = 10 V; SO-8FL package with exposed drain pad. | Not voltage-compatible for 48 V systems; requires 10 V gate drive - incompatible with 3 V logic without level shift. | Only viable in 24 V or lower systems where gate drive voltage and thermal performance outweigh voltage rating needs. |
Compared with ROHM RQ7E050AT and ON Semi NTMFS4C09NT1G, the 2SK2315TYTR-E offers optimal balance of 3 V logic compatibility, compact UPAK footprint, and 60 V rating - making it uniquely suitable for space-constrained, medium-voltage industrial switching where gate drive simplicity and board area are critical.
Availability
2SK2315TYTR-E is available at Aetrix Electronics and suitable for DC-DC converter design, brushed motor control, and industrial solenoid actuation requiring stable component supply and long-term production continuity.
Supply support for 2SK2315TYTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.
The 2SK2315TYTR-E belongs to Renesas' legacy discrete power MOSFET product line, engineered specifically for high-efficiency, low-voltage switching in cost-sensitive industrial and consumer equipment where logic-level drive and compact packaging are essential.
FAQ
What is the maximum gate-to-source voltage rating for the 2SK2315TYTR-E?
The 2SK2315TYTR-E has a maximum gate-to-source voltage (VGSS) rating of ±20 V. Exceeding this value risks permanent gate oxide damage. In practice, gate drive should be limited to 12–15 V for reliability, especially under transient conditions. The 2SK2315TYTR-E datasheet specifies ±20 V as absolute maximum, with recommended operating VGS between 0 V and +10 V for standard switching applications.
Can the 2SK2315TYTR-E be driven directly from a 3.3 V microcontroller GPIO?
Yes, the 2SK2315TYTR-E can be driven directly from a 3.3 V microcontroller GPIO. Its gate threshold voltage (VGS(off)) ranges from 0.5 V to 1.5 V, and RDS(on) is specified down to VGS = 3 V (0.6 Ω typ). At 3.3 V, the device achieves full enhancement with low on-resistance - confirmed by typical transfer characteristics showing >1.5 A ID at VGS = 3.3 V and VDS = 10 V.
What is the thermal resistance (RthJC) of the 2SK2315TYTR-E in its UPAK package?
The 2SK2315TYTR-E does not specify RthJC explicitly in its datasheet. Instead, thermal performance is characterized via channel dissipation (Pch = 1 W) on a defined alumina ceramic board (12.5 × 20 × 0.7 mm). This implies an effective junction-to-case thermal resistance of approximately 100°C/W under those test conditions - derived from ΔT = P × Rth, where Tch − Ta ≈ 150°C − 25°C = 125°C at P = 1 W.
Does the 2SK2315TYTR-E have avalanche ruggedness rating?
No, the 2SK2315TYTR-E datasheet does not specify single-pulse or repetitive avalanche energy (EAS) ratings. It is not characterized or guaranteed for avalanche operation. Designers must ensure that inductive switching stresses remain within the Safe Operating Area (SOA) limits shown on page 3 - particularly avoiding operation beyond the RDS(on)-limited curve at high VDS and high ID.
What is the marking code printed on the 2SK2315TYTR-E package?
The 2SK2315TYTR-E is marked "TY" on the top surface of its UPAK package, per the official Renesas datasheet (REJ03G1006-0200, Rev.2.00). This 2-character marking identifies the device variant within the 2SK2315 family and is consistent across all taping variants including 2SK2315TYTR-E and 2SK2315TYTL-E.
2SK2315TYTR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 3V, 4V
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 1A, 4V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 173 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UPAK
2SK2315TYTR-E FAQ
1.How can I place an order for 2SK2315TYTR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK2315TYTR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK2315TYTR-E reliable?
The price and inventory of 2SK2315TYTR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2315TYTR-E is usually 5 days.
3.What payment methods are accepted for 2SK2315TYTR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2315TYTR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK2315TYTR-E?
2SK2315TYTR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK2315TYTR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK2315TYTR-E?
For technical support, including 2SK2315TYTR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2315TYTR-E requirements.
6.How does Aetrix verify that 2SK2315TYTR-E is sourced from the original manufacturer or authorized distributors?
All 2SK2315TYTR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2315TYTR-E meets industry standards.
7.What is the process for return or replacement of 2SK2315TYTR-E?
All 2SK2315TYTR-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2315TYTR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK2315TYTR-E part is unused and in its original packaging.
Return procedure for 2SK2315TYTR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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