Renesas 2SK2329L-E

Overview

2SK2329L-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It features 30 V V_DSS, 10 A continuous drain current, 0.04 Ω R_DS(on) at V_GS = 4 V, low gate charge (Q_g typ. 10 nC), and fast switching with t_d(on) = 20 ns and t_f = 125 ns.

For engineers reviewing the 2SK2329L-E datasheet, 2SK2329L-E pinout, 2SK2329L-E application, or 2SK2329L-E equivalent, this device is selected for compact, high-efficiency power stages where low conduction loss, 2.5 V gate drive compatibility, and integrated body diode recovery (t_rr = 100 ns) are critical design requirements.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low R_DS(on) and fast switching in synchronous and non-synchronous buck topologies. Its gate threshold voltage range (V_GS(off) = 0.4–1.4 V) enables reliable turn-on from 3 V logic sources, while its C_iss = 1250 pF and C_rss = 120 pF support stable gate drive design with minimal Miller effect.

The device integrates a body diode rated for 10 A reverse current with V_DF = 0.9 V at I_F = 10 A and t_rr = 100 ns under di/dt = 20 A/µs - enabling efficient freewheeling in hard-switched converters without external Schottky supplementation.

Key Specifications

Pinout & Package

2SK2329L-E uses the DPAK(L)-(2) package (Renesas code PRSS0004ZD-B), a surface-mount variant of the TO-252 with exposed drain pad for thermal performance. Dimensions: 16.2 × 5.4 × 2.3 mm (L × W × H), mass 0.42 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLML6344TRPBF and DMN3028LSD-13, the 2SK2329L-E uniquely balances 10 A current rating, 0.04 Ω R_DS(on), documented 100 ns t_rr, and DPAK(L) thermal capability - making it optimal for medium-power, thermally constrained DC-DC and motor drive stages where both conduction and switching losses must be minimized.

Availability

2SK2329L-E is available at Aetrix Electronics and suitable for DC-DC converters, switching regulators, and motor drive power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for 2SK2329L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The 2SK2329L-E belongs to Renesas' legacy silicon power MOSFET product line, engineered specifically for high-efficiency, medium-current switching in industrial power supplies and motor controls.

FAQ

What is the maximum continuous drain current rating for the 2SK2329L-E?

The 2SK2329L-E is rated for 10 A continuous drain current (I_D) at case temperature T_c = 25°C. This rating assumes proper PCB copper area for thermal conduction from the exposed drain pad. At higher case temperatures, derating applies per the P_ch vs. T_c curve - e.g., 12 W at T_c = 75°C. Always verify thermal design using the published θ_ch–c = 6.25°C/W value in your layout.

Does the 2SK2329L-E support 2.5 V gate drive operation?

Yes, the 2SK2329L-E is explicitly characterized for 2.5 V gate drive: its R_DS(on) is specified as 0.06 Ω max at V_GS = 2.5 V and I_D = 5 A. Combined with a low V_GS(th) range (0.4–1.4 V), this ensures robust enhancement from standard 2.5 V logic sources without requiring gate boosting circuitry - a key advantage in battery-powered and low-voltage embedded systems.

What is the body diode reverse recovery time (t_rr) of the 2SK2329L-E?

The 2SK2329L-E body diode has a reverse recovery time t_rr of 100 ns, measured at I_F = 10 A, di_F/dt = 20 A/µs, and V_GS = 0. This parameter is fully specified in the Electrical Characteristics table and confirmed in the "Body to Drain Diode Reverse Recovery Time" graph on page 4 of the datasheet. It directly impacts switching loss and EMI in hard-switched topologies.

Which package does the 2SK2329L-E use, and how is it thermally configured?

The 2SK2329L-E uses the DPAK(L)-(2) package (Renesas code PRSS0004ZD-B), a surface-mount variant of TO-252 with an exposed drain pad occupying the full bottom surface. Pins 2 and 4 are both internally connected to the drain and must be soldered to the same large copper pour for optimal thermal conduction and current sharing. The package achieves θ_ch–c = 6.25°C/W when mounted on ≥1 in² of 2 oz copper.

Is the 2SK2329L-E RoHS compliant and lead-free?

Yes, the 2SK2329L-E meets RoHS Directive 2011/65/EU requirements and is lead-free. This is confirmed by Renesas' environmental compliance documentation and ordering information - the "-E" suffix in the part number denotes lead-free (Pb-free) packaging. No exemptions apply; all homogeneous materials comply with the 0.1 wt% Pb threshold.