Renesas 2SK2341-AZ

Overview

2SK2341-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications in industrial power supplies and motor drives. It features a 250 V drain-to-source breakdown voltage, 0.26 Ω maximum R_DS(on) at V_GS = 10 V and I_D = 6 A, 11 A DC drain current rating, and high single-pulse avalanche energy of 320 mJ. Its TO-220-compatible MP-45F package supports robust thermal dissipation in conduction-limited designs.

For engineers reviewing the 2SK2341-AZ datasheet, 2SK2341-AZ pinout, 2SK2341-AZ application, or 2SK2341-AZ equivalent, key selection criteria include verified avalanche ruggedness (IAS = 11 A, EAS = 320 mJ), low gate charge (Q_G = 33 nC), fast switching (t_d(off) = 50 ns), body diode recovery (t_rr = 220 ns), and industrial-grade reliability per Renesas Standard quality grade.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched DC-DC converters and AC-DC PFC stages. Its gate threshold voltage range (V_GS(off) = 2.0–4.0 V) ensures stable turn-on with standard 10 V gate drivers, while its low C_iss (1090 pF typ.) and C_rss (80 pF) support efficient high-frequency operation up to several hundred kHz.

The integrated source-drain body diode enables synchronous rectification or freewheeling paths, with VF(S-D) = 1.0 V at 11 A and t_rr = 220 ns under defined di/dt conditions. Thermal design must account for R_th(ch-c) = 3.57 °C/W and derating beyond T_C = 25 °C per the SOA curves.

Key Specifications

Pinout & Package

2SK2341-AZ uses the MP-45F (isolated TO-220) package: insulated metal tab, 3-pin vertical mounting, 15.0 mm × 12.0 mm footprint, 13.5 mm minimum height, and 3.2 mm diameter mounting hole. The case is electrically isolated from all terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP20NM50FP and IXTP12N25P, the 2SK2341-AZ provides guaranteed electrical isolation in the TO-220 form factor, making it uniquely suitable for grounded-heatsink industrial installations where creepage/clearance and safety certification are critical.

Availability

2SK2341-AZ is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, DC motor drives, AC-DC power factor correction circuits, and inductive load switching requiring stable component supply and long-term manufacturability.

Supply support for 2SK2341-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and mixed-signal solutions.

The 2SK2341-AZ belongs to Renesas' legacy industrial power MOSFET product line, engineered for ruggedized high-voltage switching in non-automotive industrial equipment under Standard quality grade compliance.

FAQ

What is the maximum continuous drain current rating for the 2SK2341-AZ at 100°C case temperature?

The 2SK2341-AZ has a DC drain current rating of ±11 A at T_C = 25 °C. Per the derating curve in the datasheet, its usable continuous current drops to approximately 7 A at T_C = 100 °C due to thermal resistance limitations. This value assumes proper heatsinking and ambient conditions consistent with the test setup (R_th(ch-c) = 3.57 °C/W). Always verify actual junction temperature using measured case temperature and power dissipation in the final application.

Does the 2SK2341-AZ have built-in gate protection against electrostatic discharge?

Yes, the 2SK2341-AZ integrates a gate-source diode for basic ESD protection. However, the datasheet explicitly states that this internal diode is insufficient for real-world handling or system-level ESD events. An external gate protection circuit-such as a Zener clamp or RC snubber-is required whenever transient voltages exceeding ±30 V may appear across the gate-source terminals during operation or assembly.

Can the 2SK2341-AZ be used in avalanche mode repeatedly, or is it limited to single-pulse operation?

The 2SK2341-AZ is characterized for single-pulse avalanche operation only, with E_AS = 320 mJ and I_AS = 11 A specified under strict test conditions (T_ch = 25 °C, R_G = 25 Ω, V_GS = 20 V → 0). Repetitive avalanche is not rated or guaranteed. For applications requiring repeated inductive energy clamping, a dedicated avalanche-rated MOSFET or external snubber network is recommended to ensure reliability.

What is the gate-to-source threshold voltage range for the 2SK2341-AZ, and how does it affect drive requirements?

The 2SK2341-AZ has a gate-to-source cutoff voltage (V_GS(off)) range of 2.0–4.0 V at V_DS = 10 V and I_D = 1 mA. This means the device begins conducting significantly around 3 V and achieves full enhancement near 10 V. To ensure low R_DS(on) and minimal conduction loss, a minimum 10 V gate drive is required. Logic-level 5 V microcontrollers cannot directly drive the 2SK2341-AZ without a level-shifting gate driver.

Is the 2SK2341-AZ compliant with RoHS and lead-free soldering standards?

Yes, the 2SK2341-AZ complies with the EU RoHS Directive and is manufactured with lead-free terminations. Renesas confirms environmental compatibility per applicable regulations, and the device supports standard reflow soldering profiles for Pb-free assembly. Refer to Renesas' official product change notices for specific halogen-free status and JEDEC MSL rating, which is typically MSL-1 for this TO-220 package variant.