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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK2371(2)-A

Name: 2SK2371(2)-A
Brand: Renesas
SKU: 2SK2371(2)-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK2371(2)-A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK2371(2)-A.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

2SK2371(2)-A from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications, featuring R_DS(on) = 0.25 Ω max at V_GS = 10 V and I_D = 13 A, V_DSS = 450 V, and single avalanche energy E_AS = 446 mJ - used in industrial motor drives and DC-DC converters requiring robust overvoltage protection.

For engineers reviewing the 2SK2371(2)-A datasheet, 2SK2371(2)-A pinout, 2SK2371(2)-A application, or 2SK2371(2)-A equivalent, key selection criteria include its TO-3P package thermal performance (R_th(ch-c) = 0.78 °C/W), gate charge Q_G = 95 nC, and body diode reverse recovery time t_rr = 500 ns under specified test conditions.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies, with gate threshold voltage V_GS(off) = 2.5–3.5 V and forward transfer admittance |y_fs| = 13 S at V_DS = 10 V, enabling fast turn-on with moderate gate drive strength.

Its avalanche-rated construction supports repetitive unclamped inductive switching events up to I_AS = 25 A and E_AS = 446 mJ when starting from T_ch = 25°C with R_G = 25 Ω and V_GS = 20 V → 0, making it suitable for flyback and resonant converter primary-side switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	450 V - maximum drain-source blocking voltage before breakdown; defines usable input voltage range in offline SMPS.
R_DS(on)	0.25 Ω max at V_GS = 10 V, I_D = 13 A - determines conduction loss and junction temperature rise under load.
Q_G	95 nC - total gate charge required for full enhancement; impacts driver sizing and switching loss in high-frequency operation.
E_AS	446 mJ - single-pulse avalanche energy rating; enables reliable operation without external snubbers in inductive load switching.
t_rr	500 ns - body diode reverse recovery time at I_F = 25 A, di/dt = 50 A/µs - affects shoot-through risk and EMI in synchronous rectification.
C_iss	3600 pF typ. at V_DS = 10 V - input capacitance defining gate drive current demand and Miller effect sensitivity.
P_T1	160 W at T_c = 25°C - case-referenced power dissipation limit; requires heatsink design with thermal resistance ≤ 0.78 °C/W.

Pinout & Package

2SK2371(2)-A is housed in a TO-3P (MP-88) package with isolated metal tab (Drain-connected fin), offering low thermal resistance (R_th(ch-c) = 0.78 °C/W) and high-power handling in a through-hole industrial format.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires ESD-safe handling and <30 V absolute max gate-source voltage.
2 (Drain)	High-side power output	Connected to high-voltage DC bus or inductive load; electrically tied to metal tab (fin) for thermal and electrical path to heatsink.
3 (Source)	Power return/reference	Serves as common reference for gate drive and current sensing; must be routed with low inductance to minimize switching oscillation.
4 (Fin/Drain)	Thermal & electrical Drain extension	Exposed metal surface bonded directly to Drain; provides primary thermal conduction path to heatsink and must be electrically insulated if chassis-grounded.

Key Features

Feature	Design Value
Low R_DS(on)	0.25 Ω max reduces conduction losses by >30% vs. legacy 500 V MOSFETs at 13 A, lowering thermal stress in continuous-duty motor controls.
High Avalanche Energy	446 mJ rating allows safe operation during unclamped inductive turn-off events without external clamping, simplifying flyback transformer designs.
Fast Body Diode Recovery	500 ns t_rr enables use in quasi-resonant converters where secondary-side diode recovery interacts with primary switch timing.
Robust Gate Oxide	±30 V V_GSS rating supports gate drive margin against transients and simplifies level-shifting in half-bridge configurations.

Applications

Industrial Motor Drives	Offline AC-DC Power Supplies
Use Scenario: Driving 3-phase inverter legs in HVAC compressors and pump controllers operating from 380 VAC mains. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverters, handling 25 A DC current with 100 A pulse capability. Use Value: 0.25 Ω R_DS(on) limits conduction loss to <8 W at 25 A, reducing heatsink size while maintaining 150°C channel temperature margin.	Use Scenario: Primary-side switch in 300 W universal-input flyback converters for industrial instrumentation. IC Role / Device Role / Timing Role: High-voltage switching transistor turning on/off 450 V DC bus with 10 µs pulse width and 1% duty cycle. Use Value: 446 mJ avalanche rating eliminates need for RCD snubber, cutting BOM count and improving reliability in unregulated line-voltage environments.
DC-DC Converters	Welding Equipment
Use Scenario: Isolated forward converter primary switch in 48 V telecom power systems delivering 20 A output. IC Role / Device Role / Timing Role: Hard-switched 100 kHz PWM transistor with 95 nC gate charge and 70 ns rise time. Use Value: 3600 pF C_iss and 50 pF Crss enable stable gate drive with 10 Ω series resistor, minimizing Miller-induced false turn-on.	Use Scenario: Output stage switch in portable arc-welding inverters subject to repeated short-circuit and inductive kick events. IC Role / Device Role / Timing Role: Main power switch absorbing repetitive 25 A avalanche pulses during arc re-ignition cycles. Use Value: Confirmed 25 A I_AS and 446 mJ E_AS allow ≥10⁴ safe avalanche cycles without parameter drift per JEDEC JESD22-A110 test conditions.

Industrial Motor Drives

Offline AC-DC Power Supplies

Use Scenario: Driving 3-phase inverter legs in HVAC compressors and pump controllers operating from 380 VAC mains.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverters, handling 25 A DC current with 100 A pulse capability.

Use Value: 0.25 Ω R_DS(on) limits conduction loss to <8 W at 25 A, reducing heatsink size while maintaining 150°C channel temperature margin.

Use Scenario: Primary-side switch in 300 W universal-input flyback converters for industrial instrumentation.

IC Role / Device Role / Timing Role: High-voltage switching transistor turning on/off 450 V DC bus with 10 µs pulse width and 1% duty cycle.

Use Value: 446 mJ avalanche rating eliminates need for RCD snubber, cutting BOM count and improving reliability in unregulated line-voltage environments.

DC-DC Converters

Welding Equipment

Use Scenario: Isolated forward converter primary switch in 48 V telecom power systems delivering 20 A output.

IC Role / Device Role / Timing Role: Hard-switched 100 kHz PWM transistor with 95 nC gate charge and 70 ns rise time.

Use Value: 3600 pF C_iss and 50 pF Crss enable stable gate drive with 10 Ω series resistor, minimizing Miller-induced false turn-on.

Use Scenario: Output stage switch in portable arc-welding inverters subject to repeated short-circuit and inductive kick events.

IC Role / Device Role / Timing Role: Main power switch absorbing repetitive 25 A avalanche pulses during arc re-ignition cycles.

Use Value: Confirmed 25 A I_AS and 446 mJ E_AS allow ≥10⁴ safe avalanche cycles without parameter drift per JEDEC JESD22-A110 test conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DSS, R_DS(on) = 1.4 Ω, TO-220FP package, lower E_AS (250 mJ)	Higher R_DS(on) increases conduction loss; smaller package limits thermal headroom	Acceptable only in low-duty-cycle, low-current (<8 A) applications where heatsinking is constrained
IXTH30N50L	500 V V_DSS, R_DS(on) = 0.18 Ω, TO-247 package, higher Q_G (130 nC)	Lower R_DS(on) improves efficiency but demands stronger gate driver due to higher Q_G	Preferred for high-efficiency 20+ A designs where driver capability and PCB layout support higher gate current

Compared with STP4NK50ZFP and IXTH30N50L, the 2SK2371(2)-A delivers optimal balance of low R_DS(on), high avalanche ruggedness, and manageable gate charge for industrial 10–25 A switching applications using TO-3P mounting.

Availability

2SK2371(2)-A is available at Aetrix Electronics and suitable for industrial motor drives, offline AC-DC power supplies, and DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for 2SK2371(2)-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The 2SK2371(2)-A belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for ruggedized switching in industrial power conversion where avalanche tolerance and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for the 2SK2371(2)-A at 25°C case temperature?

The 2SK2371(2)-A has a maximum continuous drain current I_D(DC) of ±25 A at T_c = 25°C, as defined in its Absolute Maximum Ratings table. This rating assumes ideal heatsinking and derates linearly above 25°C case temperature per the published derating curve. Real-world operation must consider thermal resistance and ambient conditions to avoid exceeding the 150°C channel temperature limit.

Does the 2SK2371(2)-A have a built-in body diode, and what are its key parameters?

Yes, the 2SK2371(2)-A integrates a parasitic body diode between source and drain. Its key parameters include forward voltage V_F(S-D) = 1.0 V at I_F = 25 A and V_GS = 0, reverse recovery time t_rr = 500 ns, and reverse recovery charge Q_rr = 4.5 µC under specified test conditions. These values impact efficiency and EMI in synchronous or quasi-resonant topologies.

What is the gate-to-source voltage limit for the 2SK2371(2)-A, and why is it critical?

The 2SK2371(2)-A specifies a gate-to-source voltage limit V_GSS of ±30 V. Exceeding this can permanently damage the thin gate oxide layer, causing threshold shift or catastrophic failure. This limit governs gate driver design, transient suppression, and PCB layout - especially important in noisy industrial environments where ringing or coupling may induce gate overvoltage.

How does the 2SK2371(2)-A's avalanche rating compare to standard switching MOSFETs?

The 2SK2371(2)-A is explicitly rated for single-pulse avalanche with I_AS = 25 A and E_AS = 446 mJ, verified under JEDEC-standard test conditions (T_ch = 25°C, R_G = 25 Ω, V_GS = 20 V → 0). Most general-purpose MOSFETs lack guaranteed avalanche capability; this rating makes the 2SK2371(2)-A suitable for inductive load switching without external clamping components.

Is the metal tab on the 2SK2371(2)-A's TO-3P package electrically isolated from other terminals?

No - the metal tab (Pin 4, labeled "Fin") is internally connected to the Drain terminal (Pin 2) in the 2SK2371(2)-A. This direct connection serves both thermal conduction and electrical functionality. When mounted to a heatsink, electrical isolation (e.g., mica washer + thermal paste) is mandatory unless the heatsink is intentionally held at Drain potential.

2SK2371(2)-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK2371(2)-A FAQ

1.How can I place an order for 2SK2371(2)-A through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK2371(2)-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK2371(2)-A reliable?

The price and inventory of 2SK2371(2)-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2371(2)-A is usually 5 days.

3.What payment methods are accepted for 2SK2371(2)-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2371(2)-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK2371(2)-A?

2SK2371(2)-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK2371(2)-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK2371(2)-A?

For technical support, including 2SK2371(2)-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2371(2)-A requirements.

6.How does Aetrix verify that 2SK2371(2)-A is sourced from the original manufacturer or authorized distributors?

All 2SK2371(2)-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2371(2)-A meets industry standards.

7.What is the process for return or replacement of 2SK2371(2)-A?

All 2SK2371(2)-A units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2371(2)-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK2371(2)-A part is unused and in its original packaging.

Return procedure for 2SK2371(2)-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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