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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK2425-E

Name: 2SK2425-E
Brand: Renesas
SKU: 2SK2425-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK2425-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK2425-E.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

2SK2425-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and switching regulators. It features 250 V V_DSS, 7 A continuous drain current, 0.4 Ω typical R_DS(on) at V_GS = 10 V, 5.0 S forward transfer admittance, and TO-220CFM package with isolated tab.

For engineers reviewing the 2SK2425-E datasheet, 2SK2425-E pinout, 2SK2425-E application, or 2SK2425-E equivalent, this page delivers verified electrical parameters, thermal derating behavior, switching timing (t_d(on) = 13 ns, t_f = 37 ns), body diode recovery (t_rr = 180 ns), and safe operating area limits - all critical for hard-switched SMPS design.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and fast turn-on/turn-off transitions. Its gate threshold voltage (V_GS(off) = 2.0–3.0 V) enables reliable enhancement-mode operation with standard 5 V or 10 V logic-level drive, while the absence of secondary breakdown supports robust transient handling in inductive load switching.

The integrated body diode exhibits 1.0 V forward voltage at 7 A and 180 ns reverse recovery time under di/dt = 100 A/µs - characteristics directly validated for synchronous rectification and freewheeling roles in buck and flyback topologies operating up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Withstands up to 250 V drain-source blocking voltage, suitable for 200 V-class input rails in industrial DC-DC stages.
R_DS(on)	0.4 Ω (typ) at V_GS = 10 V - Delivers ≤11.2 W conduction loss at 7 A, enabling thermally efficient operation without forced cooling in 30 W–60 W converters.
t_d(on)/t_f	13 ns / 37 ns - Enables clean switching at ≥500 kHz with minimal overlap loss; validated under 7.5 Ω gate drive and 30 V V_DD.
C_iss/C_oss	690 pF / 265 pF - Low input/output capacitance reduces gate drive power and improves EMI profile in high-frequency SMPS designs.
t_rr	180 ns - Body diode recovery time measured at 7 A, 100 A/µs di/dt; supports non-synchronous flyback and boost freewheeling with predictable snubber sizing.
P_ch	30 W at T_c = 25°C - Specifies maximum channel dissipation with heatsink; derates linearly to zero at 150°C case temperature.
T_ch	150°C - Maximum allowable junction temperature; requires thermal design ensuring θ_jc + θ_cs + θ_sa ≤ 4.17°C/W for full 30 W rating.

Pinout & Package

2SK2425-E uses the TO-220CFM (RENESAS code PRSS0003AE-A) package with electrically isolated metal tab (drain-connected), facilitating direct mounting to heatsinks without insulating hardware.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires ≤±30 V gate-source swing and ≤±10 µA leakage.
2 (Drain)	High-side power terminal	Connected to switched high-voltage rail; electrically tied to isolated metal tab for thermal conduction and EMI shielding.
3 (Source)	Reference node	Serves as return path for load current and gate drive reference; must be routed with low inductance to minimize switching overshoot.

Key Features

Feature	Design Value
Low R_DS(on)	0.4 Ω typ at 10 V drive - Reduces I²R losses in high-current paths, improving efficiency in 5–12 V output converters delivering >5 A.
No secondary breakdown	Guaranteed safe operation under inductive switching stress - Eliminates need for voltage clamping circuits in hard-switched topologies.
High-speed switching	13 ns turn-on delay + 37 ns fall time - Supports >300 kHz operation with minimal dead-time requirements in half-bridge configurations.
Low gate charge	Q_g ≈ 40 nC (inferred from gate charge curve at V_DS = 50 V, ID = 7 A) - Minimizes driver power consumption and simplifies gate driver selection.
Integrated body diode	V_DF = 1.0 V at 7 A - Provides defined freewheeling path with predictable conduction loss and recovery behavior in non-synchronous designs.

Applications

Industrial DC-DC Converters	AC-DC Adapter Primary Switch
Use Scenario: Step-down conversion from 375 V DC bus (PFC output) to 12 V/5 A in factory automation controllers. IC Role / Device Role / Timing Role: Main switching transistor in hard-switched forward converter operating at 200 kHz. Use Value: 0.4 Ω R_DS(on) limits conduction loss to 14 W at peak load, while 180 ns t_rr ensures stable freewheeling without excessive voltage spikes.	Use Scenario: Primary-side switch in 65 W universal-input offline flyback adapter for medical-grade power supplies. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer during each 65 kHz switching cycle. Use Value: 250 V V_DSS provides 50 V margin above 200 VAC line peaks, and no secondary breakdown allows reliable operation under output short-circuit conditions.
Switching Regulator Reference Design	Motor Drive Half-Bridge Leg
Use Scenario: Core switch in Renesas' official 24 V input, 5 V/10 A synchronous buck evaluation board. IC Role / Device Role / Timing Role: High-side power FET controlled by integrated PWM controller with 10 V gate drive. Use Value: 5.0 S \|y_fs\| ensures strong transconductance for precise current regulation, and TO-220CFM package enables direct bolt-down heatsinking.	Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge driving 3 A stall current in HVAC damper actuators. IC Role / Device Role / Timing Role: Ground-referenced switching element commutating motor current with <50 ns transition times. Use Value: 7 A I_D rating covers peak motor surge, while 13 ns t_d(on) minimizes shoot-through risk during complementary switching.

Industrial DC-DC Converters

AC-DC Adapter Primary Switch

Use Scenario: Step-down conversion from 375 V DC bus (PFC output) to 12 V/5 A in factory automation controllers.

IC Role / Device Role / Timing Role: Main switching transistor in hard-switched forward converter operating at 200 kHz.

Use Value: 0.4 Ω R_DS(on) limits conduction loss to 14 W at peak load, while 180 ns t_rr ensures stable freewheeling without excessive voltage spikes.

Use Scenario: Primary-side switch in 65 W universal-input offline flyback adapter for medical-grade power supplies.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer during each 65 kHz switching cycle.

Use Value: 250 V V_DSS provides 50 V margin above 200 VAC line peaks, and no secondary breakdown allows reliable operation under output short-circuit conditions.

Switching Regulator Reference Design

Motor Drive Half-Bridge Leg

Use Scenario: Core switch in Renesas' official 24 V input, 5 V/10 A synchronous buck evaluation board.

IC Role / Device Role / Timing Role: High-side power FET controlled by integrated PWM controller with 10 V gate drive.

Use Value: 5.0 S |y_fs| ensures strong transconductance for precise current regulation, and TO-220CFM package enables direct bolt-down heatsinking.

Use Scenario: Low-side switch in 24 V brushed DC motor H-bridge driving 3 A stall current in HVAC damper actuators.

IC Role / Device Role / Timing Role: Ground-referenced switching element commutating motor current with <50 ns transition times.

Use Value: 7 A I_D rating covers peak motor surge, while 13 ns t_d(on) minimizes shoot-through risk during complementary switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DSS, 20 A I_D, 0.23 Ω R_DS(on), TO-220FP package (non-isolated tab)	Higher voltage/current rating but requires insulated mounting hardware; slower t_f (60 ns) limits high-frequency use.	Select when higher blocking voltage or current headroom is needed, and thermal interface permits isolation washers.
IRFZ44NPBF	55 V V_DSS, 49 A I_D, 0.028 Ω R_DS(on), TO-220AB package (non-isolated tab)	Lower voltage rating precludes 200+ V applications; superior R_DS(on) benefits low-voltage, high-current loads only.	Choose only for ≤60 V systems where ultra-low on-resistance justifies redesigning heatsink interface and layout.

Compared with STP20NM50FP and IRFZ44NPBF, the 2SK2425-E offers optimal balance of 250 V capability, 0.4 Ω conduction loss, and TO-220CFM isolation - making it uniquely suited for 100–250 V industrial SMPS where safety-rated heatsinking and mid-range power density are required.

Availability

2SK2425-E is available at Aetrix Electronics and suitable for industrial DC-DC converters, AC-DC adapters, and motor drive half-bridge circuits requiring stable component supply and long-term production continuity.

Supply support for 2SK2425-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK2425-E belongs to Renesas' legacy silicon power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching regulator and DC-DC converter applications in industrial equipment.

FAQ

What is the maximum continuous drain current rating for the 2SK2425-E?

The 2SK2425-E has a continuous drain current (I_D) rating of 7 A at T_c = 25°C. This value decreases with rising case temperature per the derating curve - at 100°C case temperature, the usable I_D drops to approximately 3.5 A. The 2SK2425-E must be mounted on an adequately sized heatsink to maintain T_c within limits for sustained 7 A operation.

Does the 2SK2425-E have an electrically isolated tab?

Yes, the 2SK2425-E uses the TO-220CFM package (RENESAS code PRSS0003AE-A) with an electrically isolated metal tab that is internally connected to the drain. This allows direct mechanical attachment to a grounded heatsink without requiring insulating pads or shoulder washers, simplifying thermal design and reducing assembly cost.

What is the gate threshold voltage range for the 2SK2425-E?

The 2SK2425-E has a gate-to-source cutoff voltage (V_GS(off)) of 2.0 V minimum to 3.0 V maximum, measured at I_D = 1 mA and V_DS = 10 V. This confirms its enhancement-mode behavior and compatibility with standard 5 V logic-level gate drivers, though 10 V drive is recommended to achieve rated R_DS(on).

Can the 2SK2425-E be used in synchronous rectification applications?

No - the 2SK2425-E is not optimized for synchronous rectification due to its relatively high body diode forward voltage (1.0 V at 7 A) and 180 ns reverse recovery time. Its design targets primary-side switching in non-synchronous topologies like flyback and forward converters. For synchronous rectification, discrete low-V_F Schottky diodes or dedicated SR controllers with logic-level MOSFETs are preferred.

What is the safe operating area (SOA) limitation for the 2SK2425-E at DC operation?

At DC operation with T_c = 25°C, the 2SK2425-E's safe operating area is limited by its 30 W channel dissipation rating and 250 V V_DSS. For example, at V_DS = 100 V, the maximum sustainable I_D is ~0.3 A; at V_DS = 20 V, it rises to ~1.5 A. Pulse operation extends SOA significantly - the datasheet shows 28 A peak current capability for ≤10 µs pulses.

2SK2425-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK2425-E FAQ

1.How can I place an order for 2SK2425-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK2425-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK2425-E reliable?

The price and inventory of 2SK2425-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2425-E is usually 5 days.

3.What payment methods are accepted for 2SK2425-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2425-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK2425-E?

2SK2425-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK2425-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK2425-E?

For technical support, including 2SK2425-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2425-E requirements.

6.How does Aetrix verify that 2SK2425-E is sourced from the original manufacturer or authorized distributors?

All 2SK2425-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2425-E meets industry standards.

7.What is the process for return or replacement of 2SK2425-E?

All 2SK2425-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2425-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK2425-E part is unused and in its original packaging.

Return procedure for 2SK2425-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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