Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK2462(04)-AZ

Name: 2SK2462(04)-AZ
Brand: Renesas
SKU: 2SK2462(04)-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2SK2462(04)-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK2462(04)-AZ.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:21,036

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2SK2462(04)-AZ from NEC (now Renesas Electronics) is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits. It features R_DS(on) ≤ 0.14 Ω at V_GS = 10 V / I_D = 8 A, 100 V V_DSS, ±15 A continuous drain current, and built-in gate-source ESD protection diodes. Its MP-45F (isolated TO-220) package supports heatsink mounting for thermal management in high-power applications.

For engineers reviewing the 2SK2462(04)-AZ datasheet, 2SK2462(04)-AZ pinout, 2SK2462(04)-AZ application, or 2SK2462(04)-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 22.5 mJ), low-input capacitance (C_iss = 790 pF typ.), gate charge (Q_G = 33 nC), and rugged body diode performance (V_F(S-D) = 1.1 V at 15 A).

Technical Context

This device operates as a unidirectional, enhancement-mode N-channel switch with voltage-controlled gate drive. Its channel temperature rating of 150 °C and transient thermal resistance (R_th(ch-c) = 4.17 °C/W) enable stable operation under pulsed loads up to 60 A with ≤1% duty cycle.

The integrated gate-source protection diode mitigates ESD risk but does not replace external gate clamping in high-dV/dt environments. Avalanche capability is validated per Test Circuit 1 (I_AS = 15 A, E_AS = 22.5 mJ, T_ch = 25 °C, R_G = 25 Ω, V_GS = 20 V → 0).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; defines upper limit for DC bus or inductive flyback voltage handling
R_DS(on)1	0.14 Ω max @ V_GS = 10 V, I_D = 8 A - Directly determines conduction loss (P_cond ≈ I² × R) in high-current switching paths
I_D(DC)	±15 A - Continuous safe operating current at T_C = 25 °C; derates linearly above 25 °C case temperature
E_AS	22.5 mJ - Single-pulse avalanche energy tolerance; enables robustness against inductive turn-off transients without snubbers
C_iss	790 pF typ. @ V_DS = 10 V - Input capacitance affecting gate drive strength requirements and switching speed
Q_G	33 nC - Total gate charge defining minimum driver current needed to achieve specified t_d(on)/t_f times
V_F(S-D)	1.1 V @ I_F = 15 A - Forward voltage of intrinsic body diode; impacts efficiency in synchronous rectification or freewheeling paths

Pinout & Package

2SK2462(04)-AZ uses the MP-45F package - an isolated TO-220 variant with electrically insulated tab, enabling direct heatsink mounting without insulating washers. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Voltage-controlled input requiring ≥10 V for full enhancement; protected by internal G-S diode against ESD
2 (Drain)	High-side current terminal	Connected to metal tab; carries full load current and must be thermally coupled to heatsink
3 (Source)	Reference/return node	Common return path for gate drive and load current; defines local ground reference for gate control

Key Features

Feature	Design Value
Low R_DS(on) at 4 V drive	R_DS(on)2 ≤ 0.17 Ω @ V_GS = 4 V - Enables partial-gate-drive operation in logic-level systems without level-shifting
Built-in gate-source protection	Integrated Zener-like diode - Reduces need for external gate clamp components in moderate-noise environments
High single-pulse avalanche rating	I_AS = 15 A, E_AS = 22.5 mJ - Supports reliable operation in inductive switching without external avalanche snubbers
Isolated TO-220 package	MP-45F mechanical outline - Eliminates need for insulating pads when mounting to grounded heatsinks
Fast switching with low Q_GD	Q_GD = 25 nC - Minimizes Miller plateau time, improving turn-off controllability in hard-switched topologies

Applications

DC Motor Drive	Industrial Power Supply
Use Scenario: H-bridge half-bridge leg in 24–48 V brushed DC motor controllers for factory automation actuators. IC Role / Device Role / Timing Role: High-side or low-side main switching element handling bidirectional 10–15 A peak currents. Use Value: Low R_DS(on) reduces I²R losses during PWM conduction; avalanche rating absorbs back-EMF spikes during abrupt stop commands.	Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converters for industrial PLC power modules. IC Role / Device Role / Timing Role: Main power switch operating at 50–100 kHz with 100 V DC link. Use Value: C_iss = 790 pF and Q_G = 33 nC support efficient gate driving; isolated tab simplifies heatsinking in compact enclosures.
Uninterruptible Power System	Welding Equipment
Use Scenario: Battery-to-DC bus switch in line-interactive UPS units with 12–24 V battery banks. IC Role / Device Role / Timing Role: Bidirectional isolation switch controlling battery discharge/charge paths. Use Value: Body diode V_F(S-D) = 1.1 V ensures low-loss reverse conduction during battery charging; ±20 V V_GSS accommodates gate drive transients.	Use Scenario: Inverter leg switch in portable arc welding inverters delivering 150–200 A output. IC Role / Device Role / Timing Role: Hard-switched power stage transistor handling repetitive 60 A pulses with <10 µs duration. Use Value: I_D(pulse) = ±60 A and E_AS = 22.5 mJ withstand high di/dt transients during arc ignition and short-circuit recovery.

DC Motor Drive

Industrial Power Supply

Use Scenario: H-bridge half-bridge leg in 24–48 V brushed DC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: High-side or low-side main switching element handling bidirectional 10–15 A peak currents.

Use Value: Low R_DS(on) reduces I²R losses during PWM conduction; avalanche rating absorbs back-EMF spikes during abrupt stop commands.

Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converters for industrial PLC power modules.

IC Role / Device Role / Timing Role: Main power switch operating at 50–100 kHz with 100 V DC link.

Use Value: C_iss = 790 pF and Q_G = 33 nC support efficient gate driving; isolated tab simplifies heatsinking in compact enclosures.

Uninterruptible Power System

Welding Equipment

Use Scenario: Battery-to-DC bus switch in line-interactive UPS units with 12–24 V battery banks.

IC Role / Device Role / Timing Role: Bidirectional isolation switch controlling battery discharge/charge paths.

Use Value: Body diode V_F(S-D) = 1.1 V ensures low-loss reverse conduction during battery charging; ±20 V V_GSS accommodates gate drive transients.

Use Scenario: Inverter leg switch in portable arc welding inverters delivering 150–200 A output.

IC Role / Device Role / Timing Role: Hard-switched power stage transistor handling repetitive 60 A pulses with <10 µs duration.

Use Value: I_D(pulse) = ±60 A and E_AS = 22.5 mJ withstand high di/dt transients during arc ignition and short-circuit recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF10	V_DSS = 100 V, R_DS(on) = 0.12 Ω @ 10 V, Q_G = 25 nC, non-isolated TO-220	Lacks built-in gate protection diode and avalanche rating documentation; lower Q_G enables faster switching	Preferred where gate drive is tightly controlled and external ESD protection exists; requires insulating pad for heatsink mounting
IRF540NPBF	V_DSS = 100 V, R_DS(on) = 0.044 Ω @ 10 V, Q_G = 71 nC, non-isolated TO-220	Lower R_DS(on) but higher Q_G; no published avalanche energy spec; higher C_iss (1,400 pF)	Better for low-conduction-loss, low-frequency (<50 kHz) applications; unsuitable for unclamped inductive switching without snubbers

Compared with STP16NF10 and IRF540NPBF, the 2SK2462(04)-AZ offers verified avalanche ruggedness and integrated gate protection - critical for reliability in uncontrolled industrial environments - while its isolated package eliminates insulation hardware, reducing BOM count and assembly cost in thermally demanding designs.

Availability

2SK2462(04)-AZ is available at Aetrix Electronics and suitable for industrial power supply, DC motor drive, uninterruptible power system, and welding equipment applications requiring stable component supply and long-term lifecycle continuity.

Supply support for 2SK2462(04)-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly NEC Electronics) is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and memory solutions for industrial, automotive, and infrastructure markets.

The 2SK2462(04)-AZ belongs to NEC's legacy industrial power MOSFET family, engineered specifically for ruggedized high-current switching in factory automation, power conversion, and heavy-duty equipment where reliability under electrical and thermal stress is mandatory.

FAQ

What is the maximum continuous drain current rating for the 2SK2462(04)-AZ?

The 2SK2462(04)-AZ has a maximum continuous drain current (I_D(DC)) of ±15 A at case temperature T_C = 25 °C. This rating decreases linearly with rising case temperature, reaching zero at T_C = 150 °C. Derating curves are provided in Figure 2 of the original NEC datasheet D10031EJ1V0DS00. The 2SK2462(04)-AZ must be mounted on an adequately sized heatsink to sustain rated current in real-world conditions.

Does the 2SK2462(04)-AZ have built-in gate protection, and is external protection still required?

Yes, the 2SK2462(04)-AZ integrates a gate-source protection diode to suppress ESD events. However, the datasheet explicitly states that "an additional protection circuit is externally required if a voltage exceeding rated voltage may be applied." This means external Zener clamps or RC snubbers remain necessary in high-dV/dt or lightning-surge-prone industrial environments. The 2SK2462(04)-AZ's ±20 V V_GSS rating defines the absolute gate voltage limit beyond which damage occurs.

Can the 2SK2462(04)-AZ be used in avalanche mode, and what are the validated conditions?

Yes, the 2SK2462(04)-AZ is characterized for single-pulse avalanche operation with I_AS = 15 A and E_AS = 22.5 mJ, tested under defined conditions: starting channel temperature T_ch = 25 °C, gate resistor R_G = 25 Ω, and V_GS stepped from 20 V to 0 V. These parameters are validated per NEC Test Circuit 1. Repeated avalanche operation is not guaranteed, and the 2SK2462(04)-AZ should not be operated continuously in avalanche unless fully characterized in the target application.

What is the thermal resistance from channel to case (R_th(ch-c)) for the 2SK2462(04)-AZ?

The 2SK2462(04)-AZ has a channel-to-case thermal resistance (R_th(ch-c)) of 4.17 °C/W, measured under steady-state conditions with proper mounting pressure and thermal interface material. This value enables accurate junction temperature estimation using T_ch = T_C + (P_D × R_th(ch-c)). The 2SK2462(04)-AZ's isolated MP-45F package allows direct attachment to a heatsink without electrical isolation hardware, preserving thermal performance.

How does the 2SK2462(04)-AZ perform at low gate drive voltages like 4 V?

The 2SK2462(04)-AZ is specified for R_DS(on)2 ≤ 0.17 Ω at V_GS = 4 V and I_D = 8 A, confirming usable enhancement down to logic-level gate drive. While not a true "logic-level" MOSFET (which typically achieves <0.1 Ω at 4.5 V), this performance allows integration into 5 V microcontroller-driven systems without gate drivers in moderate-current applications. The 2SK2462(04)-AZ's V_GS(off) range (1.0–2.0 V) ensures clear turn-off margin at low drive levels.

2SK2462(04)-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK2462(04)-AZ FAQ

1.How can I place an order for 2SK2462(04)-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK2462(04)-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK2462(04)-AZ reliable?

The price and inventory of 2SK2462(04)-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2462(04)-AZ is usually 5 days.

3.What payment methods are accepted for 2SK2462(04)-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2462(04)-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK2462(04)-AZ?

2SK2462(04)-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK2462(04)-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK2462(04)-AZ?

For technical support, including 2SK2462(04)-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2462(04)-AZ requirements.

6.How does Aetrix verify that 2SK2462(04)-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK2462(04)-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2462(04)-AZ meets industry standards.

7.What is the process for return or replacement of 2SK2462(04)-AZ?

All 2SK2462(04)-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2462(04)-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK2462(04)-AZ part is unused and in its original packaging.

Return procedure for 2SK2462(04)-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…