Renesas 2SK2480-AZ

Overview

2SK2480-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications, featuring 900 V drain-to-source breakdown voltage, 4.0 Ω on-resistance at V_GS = 10 V and I_D = 2.0 A, and isolated TO-220 (MP-45F) packaging. It delivers robust avalanche capability with 37.1 mJ single-pulse energy and supports industrial-grade DC/DC converters and AC-DC power supplies.

For engineers reviewing the 2SK2480-AZ datasheet, 2SK2480-AZ pinout, 2SK2480-AZ application, or 2SK2480-AZ equivalent, key selection criteria include its 900 V V_DSS, 3.0 A continuous drain current, 35 W case-rated power dissipation, low 900 pF input capacitance, and integrated body diode with 650 ns reverse recovery time - all critical for flyback, forward, and resonant converter designs requiring high-voltage isolation and ruggedness.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies, with gate threshold voltage of 2.5–3.5 V and forward transfer admittance |y_fs| ≥ 1.0 S at V_DS = 20 V and I_D = 2.0 A. Its isolated TO-220 package enables direct heatsinking while maintaining electrical separation between drain and mounting surface.

Switching performance is characterized by 17 ns turn-on delay, 7 ns rise time, 63 ns turn-off delay, and 8 ns fall time under standardized test conditions (V_DD = 150 V, R_G = 75 Ω), supported by total gate charge of 30 nC and gate-to-drain charge of 16 nC at V_DD = 450 V - enabling efficient drive in 50–200 kHz SMPS designs.

Key Specifications

Pinout & Package

2SK2480-AZ uses the MP-45F isolated TO-220 package: metal tab (drain) electrically isolated from leads, enabling direct heatsink mounting without insulating hardware. Package outline matches JEDEC TO-220AB with 2.54 mm lead pitch and 15.0 mm body length.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP9NK90ZFP and IXTP50N10D2, the 2SK2480-AZ trades higher on-resistance for built-in isolation and lower input capacitance - making it optimal for space-constrained industrial power supplies where heatsink integration simplicity and EMI-sensitive switching matter more than absolute conduction efficiency.

Availability

2SK2480-AZ is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, flyback converters, and DC-DC isolated converters requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for 2SK2480-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.

The 2SK2480-AZ belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for rugged industrial switching power conversion where reliability under repetitive avalanche stress and mechanical robustness in TO-220 form factor are prioritized.

FAQ

What is the maximum continuous drain current rating for the 2SK2480-AZ at 25°C case temperature?

The 2SK2480-AZ has a maximum continuous drain current (I_D(DC)) rating of ±3.0 A at T_C = 25 °C. This value assumes ideal heatsinking and derates linearly above 25 °C per the datasheet's total power dissipation vs. case temperature curve. At T_C = 100 °C, the usable I_D(DC) drops to approximately 1.2 A due to thermal limitations. The 2SK2480-AZ must be operated within this boundary to avoid channel temperature exceeding 150 °C.

Does the 2SK2480-AZ include an integrated body diode, and what are its key parameters?

Yes, the 2SK2480-AZ integrates a source-drain body diode with a forward voltage (V_F(S-D)) of 1.0 V at I_F = 3.0 A and V_GS = 0 V, and a reverse recovery time (t_rr) of 650 ns under specified test conditions (di/dt = 50 A/µs). These values are confirmed in the Electrical Characteristics table of the official Renesas datasheet D10272EJ1V0DS00. The 2SK2480-AZ body diode supports freewheeling in flyback and forward converters without requiring external diodes.

What is the gate-to-source voltage range specified for the 2SK2480-AZ, and why is it important?

The 2SK2480-AZ specifies a gate-to-source voltage range (V_GS) of ±30 V. This rating defines the absolute maximum voltage that can be applied between gate and source without risking oxide damage or permanent degradation. Operating the 2SK2480-AZ outside this range - especially during gate drive ringing or ESD events - may cause irreversible failure. Designers must ensure gate drivers and PCB layout limit V_GS excursions, particularly in high-dV/dt environments typical of high-voltage switching.

How does the isolated TO-220 package of the 2SK2480-AZ affect thermal and electrical design?

The MP-45F isolated TO-220 package of the 2SK2480-AZ electrically isolates the drain-connected metal tab from the leads, allowing direct attachment to a grounded heatsink without insulation hardware. Thermally, it achieves 3.57 °C/W channel-to-case resistance. This simplifies mechanical assembly and improves safety in Class I equipment, but requires verification that heatsink mounting pressure and surface flatness maintain consistent thermal contact. The 2SK2480-AZ benefits from this isolation in grounded-primary SMPS designs.

Can the 2SK2480-AZ be used in avalanche-mode operation, and what are the validated limits?

Yes, the 2SK2480-AZ is explicitly rated for single-pulse avalanche operation with I_AS = 3.0 A and E_AS = 37.1 mJ at starting channel temperature of 25 °C, R_G = 25 Ω, and V_GS = 20 V → 0 V. These parameters are measured per standard test circuit and documented in the Absolute Maximum Ratings table. Repeated avalanche operation is not guaranteed; the 2SK2480-AZ should only be used in controlled single-event scenarios such as inductive load turn-off or overvoltage clamping.