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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK2484(1)-AZ

Name: 2SK2484(1)-AZ
Brand: Renesas
SKU: 2SK2484(1)-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK2484(1)-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK2484(1)-AZ.pdf

Description:: N-CHANNEL SWITCHING POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SK2484(1)-AZ from NEC (now Renesas) is an N-channel enhancement-mode power MOSFET designed for high-voltage DC-DC converters, flyback SMPS, and industrial switching applications. It features 900 V V_DSS, 2.8 Ω R_DS(on) at V_GS = 10 V / I_D = 3.0 A, 75 W T_C-rated power dissipation, and integrated body diode with 1.0 V V_F(S-D) at 5.0 A.

For engineers reviewing the 2SK2484(1)-AZ datasheet, 2SK2484(1)-AZ pinout, 2SK2484(1)-AZ application, or 2SK2484(1)-AZ equivalent, key selection criteria include avalanche energy rating (75 mJ), low C_iss (1200 pF typ.), gate charge (40 nC), and TO-220AB package thermal performance in high-reliability industrial power stages.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies, leveraging its 900 V blocking capability and 5.0 A DC current rating. Its 1.67 °C/W channel-to-case thermal resistance enables efficient heat transfer to heatsinks when mounted with proper torque and thermal interface material.

The 2SK2484(1)-AZ integrates a fast-recovery body diode (t_rr = 670 ns, Q_rr = 3.5 µC) and supports robust single-pulse avalanche operation up to 5.0 A and 75 mJ under defined test conditions (T_ch = 25 °C, R_G = 25 Ω, V_GS = 20 V → 0).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	900 V - Supports primary-side switching in offline 400 V AC-input SMPS without derating
R_DS(on)	2.8 Ω @ V_GS = 10 V, I_D = 3.0 A - Enables <10 W conduction loss at 3 A continuous drain current
C_iss	1200 pF typ. - Reduces gate drive power requirement and improves switching efficiency in 50–100 kHz designs
E_AS	75 mJ - Provides margin against inductive turn-off stress in relay drivers and motor control snubbers
t_r/t_f	10 ns / 15 ns - Enables fast transition times with minimal overlap loss when driven by 10 Ω gate resistor
Q_G	40 nC - Requires ~0.4 mJ gate energy per switching cycle at 10 V drive, suitable for discrete gate drivers
V_F(S-D)	1.0 V @ I_F = 5.0 A - Limits reverse conduction loss during freewheeling in buck or half-bridge configurations

Pinout & Package

Package: TO-220AB (JEDEC), MP-25 outline, with metal tab (Drain) electrically connected to Pin 4 (Fin). Mounting requires insulated washer or thermal pad due to Drain-isolation constraint.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; accepts 0–20 V logic-level drive; 100 nA leakage max at ±30 V
2	Drain	Main high-voltage output node; internally bonded to metal tab (Pin 4); must be isolated from heatsink unless referenced to system ground
3	Source	Power return path; defines reference for gate drive; carries full load current and body diode forward current
4	Fin (Drain)	Exposed metal tab - electrically identical to Pin 2 (Drain); primary thermal path to heatsink

Key Features

Feature	Design Value
High-Voltage Blocking	900 V V_DSS enables direct replacement of legacy 800 V MOSFETs in telecom and industrial HV supplies
Avalanche-Rated Operation	75 mJ single-pulse E_AS allows safe operation in non-clamped inductive switching without external snubbers
Low Input Capacitance	1200 pF C_iss reduces Miller effect and gate driver loading in high-frequency (>50 kHz) topologies
Integrated Body Diode	670 ns t_rr and 3.5 µC Q_rr support synchronous rectification emulation in quasi-resonant converters
Thermal Robustness	1.67 °C/W R_th(ch-c) ensures stable junction temperature rise ≤100 °C at 75 W case power with standard heatsinking

Applications

Industrial Switch-Mode Power Supplies	High-Voltage DC Motor Control
Use Scenario: Primary-side switch in 1–3 kW offline flyback or forward converters powering factory automation controllers. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V AC rectified input; operated at 50–100 kHz with fixed duty cycle. Use Value: 900 V rating eliminates need for series-connected devices; 75 mJ avalanche energy absorbs transformer leakage spikes without clamping circuits.	Use Scenario: Low-side switching element in 48–300 V brushed DC motor drives for CNC axes and conveyors. IC Role / Device Role / Timing Role: Unidirectional current switch controlling motor direction via H-bridge complement; handles 5 A continuous stall current. Use Value: 2.8 Ω R_DS(on) limits conduction loss to <8 W at 5 A; body diode conducts freewheeling current during PWM off-time.
Capacitor Discharge Units	Inductive Load Drivers
Use Scenario: Energy discharge switch in high-energy pulse generators for electromagnetic forming and laser flashlamps. IC Role / Device Role / Timing Role: Single-shot high-current switch triggered by gate pulse; subjected to repetitive 5 A/75 mJ avalanche events. Use Value: Guaranteed single-pulse avalanche capability enables reliable repeated discharge without parameter drift or failure.	Use Scenario: Solenoid and relay driver in railway signaling systems requiring fail-safe turn-off under fault conditions. IC Role / Device Role / Timing Role: Inductive load switch with integrated diode recovery; turned off rapidly to suppress back-EMF voltage spikes. Use Value: 670 ns reverse recovery time minimizes voltage overshoot across coil; 1.0 V V_F(S-D) reduces power dissipation during forced commutation.

Industrial Switch-Mode Power Supplies

High-Voltage DC Motor Control

Use Scenario: Primary-side switch in 1–3 kW offline flyback or forward converters powering factory automation controllers.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V AC rectified input; operated at 50–100 kHz with fixed duty cycle.

Use Value: 900 V rating eliminates need for series-connected devices; 75 mJ avalanche energy absorbs transformer leakage spikes without clamping circuits.

Use Scenario: Low-side switching element in 48–300 V brushed DC motor drives for CNC axes and conveyors.

IC Role / Device Role / Timing Role: Unidirectional current switch controlling motor direction via H-bridge complement; handles 5 A continuous stall current.

Use Value: 2.8 Ω R_DS(on) limits conduction loss to <8 W at 5 A; body diode conducts freewheeling current during PWM off-time.

Capacitor Discharge Units

Inductive Load Drivers

Use Scenario: Energy discharge switch in high-energy pulse generators for electromagnetic forming and laser flashlamps.

IC Role / Device Role / Timing Role: Single-shot high-current switch triggered by gate pulse; subjected to repetitive 5 A/75 mJ avalanche events.

Use Value: Guaranteed single-pulse avalanche capability enables reliable repeated discharge without parameter drift or failure.

Use Scenario: Solenoid and relay driver in railway signaling systems requiring fail-safe turn-off under fault conditions.

IC Role / Device Role / Timing Role: Inductive load switch with integrated diode recovery; turned off rapidly to suppress back-EMF voltage spikes.

Use Value: 670 ns reverse recovery time minimizes voltage overshoot across coil; 1.0 V V_F(S-D) reduces power dissipation during forced commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK90ZFP	900 V V_DSS, 2.2 Ω R_DS(on), 1300 pF C_iss, TO-220FP package (isolated tab)	Lower R_DS(on) but higher C_iss; no specified E_AS rating in datasheet	Preferred where lower conduction loss dominates over switching loss and isolation is required
IXTP50N10D2	1000 V V_DSS, 0.22 Ω R_DS(on), 2200 pF C_iss, TO-220AB package	Higher voltage rating and much lower on-resistance, but significantly higher gate charge (120 nC)	Selected for high-efficiency, low-duty-cycle applications where gate drive strength permits

Compared with STP9NK90ZFP and IXTP50N10D2, the 2SK2484(1)-AZ offers balanced trade-offs between avalanche ruggedness, gate drive simplicity, and thermal performance in medium-power industrial switching-making it especially suitable for legacy design refreshes where reliability under transient stress is prioritized over raw efficiency.

Availability

2SK2484(1)-AZ is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, high-voltage DC motor control, and capacitor discharge units requiring stable component supply and long-term lifecycle support.

Supply support for 2SK2484(1)-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NEC Electronics Corporation (now part of Renesas Electronics) was a Japanese semiconductor manufacturer specializing in power devices, microcontrollers, and analog ICs for industrial and communications infrastructure.

The 2SK2484(1)-AZ belongs to NEC's legacy high-voltage power MOSFET family, engineered specifically for ruggedized industrial power conversion where avalanche tolerance, thermal stability, and long-term parametric consistency are critical.

FAQ

What is the maximum continuous drain current rating for the 2SK2484(1)-AZ at 25 °C case temperature?

The 2SK2484(1)-AZ has a maximum continuous drain current (I_D(DC)) rating of ±5.0 A at T_C = 25 °C. This rating assumes adequate heatsinking and is limited by package thermal resistance (R_th(ch-c) = 1.67 °C/W) and silicon SOA constraints-not just R_DS(on). At elevated case temperatures, derating is required per the datasheet's power vs. temperature curve.

Does the 2SK2484(1)-AZ have a fully rated avalanche capability, and how is it tested?

Yes, the 2SK2484(1)-AZ is fully specified for single-pulse avalanche operation: I_AS = 5.0 A and E_AS = 75 mJ. Testing follows JEDEC JESD24-11 methodology with starting channel temperature of 25 °C, gate resistor R_G = 25 Ω, and V_GS stepped from 20 V to 0 V. The 2SK2484(1)-AZ maintains parameter integrity after such events when operated within absolute maximum ratings.

Can the 2SK2484(1)-AZ be used in place of a logic-level MOSFET?

No-the 2SK2484(1)-AZ is not a logic-level device. Its gate threshold voltage (V_GS(off)) ranges from 2.5 V to 3.5 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) of 2.8 Ω. Driving it with 5 V logic will result in high on-resistance (>10 Ω) and excessive heating. The 2SK2484(1)-AZ must be paired with a dedicated gate driver or level-shifting circuit.

What is the thermal resistance from channel to ambient (R_th(ch-a)) for the 2SK2484(1)-AZ?

The datasheet specifies R_th(ch-a) = 83.3 °C/W for the 2SK2484(1)-AZ under free-air conditions (no heatsink). This value reflects worst-case ambient cooling and is not intended for practical thermal design. For real-world use, the channel-to-case resistance (R_th(ch-c) = 1.67 °C/W) is the relevant metric-thermal design must focus on mounting the TO-220AB tab to an appropriately sized heatsink with low interface resistance.

Is the body diode in the 2SK2484(1)-AZ suitable for synchronous rectification?

No-the body diode of the 2SK2484(1)-AZ is not optimized for synchronous rectification. With t_rr = 670 ns and Q_rr = 3.5 µC, it exhibits relatively slow recovery and high stored charge, leading to significant switching loss and voltage overshoot if actively commutated. It is intended for freewheeling only in low-frequency (<100 kHz), non-synchronous topologies-not for high-efficiency SR applications.

2SK2484(1)-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK2484(1)-AZ FAQ

1.How can I place an order for 2SK2484(1)-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK2484(1)-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK2484(1)-AZ reliable?

The price and inventory of 2SK2484(1)-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2484(1)-AZ is usually 5 days.

3.What payment methods are accepted for 2SK2484(1)-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2484(1)-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK2484(1)-AZ?

2SK2484(1)-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK2484(1)-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK2484(1)-AZ?

For technical support, including 2SK2484(1)-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2484(1)-AZ requirements.

6.How does Aetrix verify that 2SK2484(1)-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK2484(1)-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2484(1)-AZ meets industry standards.

7.What is the process for return or replacement of 2SK2484(1)-AZ?

All 2SK2484(1)-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2484(1)-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK2484(1)-AZ part is unused and in its original packaging.

Return procedure for 2SK2484(1)-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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