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Renesas 2SK2485-A

Part No.:
2SK2485-A
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SK2485-A.pdf
Description:
POWER FIELD-EFFECT TRANSISTOR
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:368

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Product details

Overview

2SK2485-A from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications, featuring 900 V drain-source breakdown voltage, 2.8 Ω max RDS(on) at VGS = 10 V and ID = 3.0 A, and 6.0 A DC drain current capability. It delivers robust avalanche performance (EAS = 42.3 mJ) and low input capacitance (Ciss = 1200 pF typ.), making it suitable for flyback and resonant converters in industrial power supplies.

For engineers reviewing the 2SK2485-A datasheet, 2SK2485-A pinout, 2SK2485-A application, or 2SK2485-A equivalent, key selection criteria include its 900 V VDSS, TO-3P package thermal performance (Rth(ch-c) = 1.25 °C/W), body diode reverse recovery time (trr = 740 ns), gate charge (QG = 40 nC), and avalanche-rated operation under inductive switching stress.

Technical Context

The 2SK2485-A employs a planar vertical DMOS structure optimized for high-voltage blocking and fast switching in hard-switched topologies. Its gate threshold voltage (VGS(off) = 2.5–3.5 V) ensures reliable turn-on with standard 10 V gate drivers, while its forward transfer admittance |yfs| = 2.0 S supports stable current control at 3.0 A.

Thermal design relies on its low channel-to-case thermal resistance (1.25 °C/W) and 100 W total power dissipation at Tc = 25 °C. The integrated body diode exhibits VF(S-D) = 1.0 V at 6.0 A and trr = 740 ns with di/dt = 50 A/μs - critical for snubberless quasi-resonant designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 900 V - Enables use in 400 V AC-input offline SMPS with ≥2× safety margin
RDS(on) max 2.8 Ω @ VGS = 10 V, ID = 3.0 A - Determines conduction loss in primary-side switch
ID (DC) ±6.0 A - Supports continuous output power up to ~300 W in flyback configurations
EAS 42.3 mJ - Allows unclamped inductive switching without failure in relay/snubberless designs
Ciss 1200 pF typ. @ VDS = 10 V - Impacts gate drive power and switching speed trade-off
trr 740 ns @ IF = 6.0 A, di/dt = 50 A/μs - Limits switching losses and EMI in diode-recovery phase
QG 40 nC @ VDD = 450 V - Defines minimum gate driver peak current requirement (~2 A for 20 ns rise)

Pinout & Package

2SK2485-A is housed in a TO-3P (MP-88) package with isolated metal tab (Drain-connected fin), enabling direct heatsinking without insulating pads. The case temperature rating supports 150 °C channel operation with 100 W dissipation at Tc = 25 °C.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control electrode Receives gate drive signal; requires ≤±30 V bias; sensitive to ESD
2 (Drain) Main current output terminal Connected to high-voltage DC bus; electrically tied to metal tab/fin
3 (Source) Main current return path Reference node for gate drive; carries full load current and body diode conduction
4 (Fin / Drain) Thermal & electrical Drain extension Exposed metal surface for mechanical mounting and thermal conduction to heatsink

Key Features

Feature Design Value
High-voltage blocking 900 V VDSS enables universal AC-input (85–265 VAC) offline converters with margin
Avalanche ruggedness Rated single-pulse EAS = 42.3 mJ supports reliable operation under unclamped inductive loads
Low gate charge QG = 40 nC reduces driver power loss and improves efficiency in high-frequency switching
Fast body diode trr = 740 ns minimizes reverse recovery loss and associated ringing in quasi-resonant topologies
Thermal performance Rth(ch-c) = 1.25 °C/W allows compact heatsink design for 100 W conduction-limited operation

Applications

Industrial Switch-Mode Power Supplies AC-DC Adapters for Office Equipment

Use Scenario: Primary-side switch in 150–300 W flyback converters for factory automation controllers.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer during PWM on-time; handles 400 V DC bus transients.

Use Value: 900 V VDSS and 42.3 mJ EAS prevent failure during line surges and transformer leakage spikes.

Use Scenario: Main switching transistor in universal-input (85–265 VAC) 90 W desktop PC auxiliary power supply.

IC Role / Device Role / Timing Role: Hard-switched primary FET operating at 65 kHz; manages duty cycle and zero-crossing detection timing via feedback loop.

Use Value: Low Ciss (1200 pF) and QG (40 nC) reduce switching loss and enable efficient operation at elevated frequencies.

LED Driver for High-Bay Lighting Inductive Load Switching in PLC Outputs

Use Scenario: Constant-current buck-boost stage driving 100 W LED arrays in warehouse lighting systems.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current regulator; body diode conducts during off-time.

Use Value: Fast trr (740 ns) and low VF(S-D) (1.0 V) minimize conduction loss and thermal stress in high-duty-cycle operation.

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) digital output modules.

IC Role / Device Role / Timing Role: Inductive load switch handling solenoid/valve coils rated up to 24 V DC, 2 A.

Use Value: Avalanche rating (IAS = 6.0 A) absorbs stored coil energy without external snubbers, reducing BOM count and board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP9NK90ZFP 900 V VDSS, RDS(on) = 1.4 Ω (lower), QG = 52 nC (higher), TO-220FP package Lower RDS(on) improves conduction efficiency but higher QG increases gate drive demand Prefer when thermal budget is tight and gate drive capability supports >50 nC; not drop-in due to different pinout and package
IXTP50N10D2 1000 V VDSS, RDS(on) = 0.22 Ω, QG = 120 nC, TO-220 package Higher voltage rating and much lower RDS(on) but significantly higher gate charge and cost Choose for ultra-high-efficiency 400–600 W designs where gate drive headroom and heatsink size allow

Compared with STP9NK90ZFP and IXTP50N10D2, the 2SK2485-A offers balanced trade-offs: moderate RDS(on) and QG in a thermally superior TO-3P package, making it optimal for cost-sensitive, medium-power industrial SMPS where layout space permits larger footprint and heatsinking is critical.

Availability

2SK2485-A is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, AC-DC adapters for office equipment, and LED drivers for high-bay lighting requiring stable component supply and long-term manufacturability.

Supply support for 2SK2485-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The 2SK2485-A belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for reliability-critical offline power conversion in Standard-grade applications including industrial robots and test equipment.

FAQ

What is the maximum gate-to-source voltage rating for the 2SK2485-A?

The 2SK2485-A has a maximum gate-to-source voltage (VGS) rating of ±30 V. Exceeding this limit risks permanent gate oxide damage. In practice, gate drive circuits should be clamped to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off to ensure safe, reliable switching while maintaining low RDS(on). This specification is confirmed in the Absolute Maximum Ratings table of Renesas document D10279EJ2V1DS.

Does the 2SK2485-A have an integrated body diode, and what are its key parameters?

Yes, the 2SK2485-A includes an inherent source-drain body diode. Its forward voltage is 1.0 V at IF = 6.0 A and VGS = 0 V, and its reverse recovery time is 740 ns under di/dt = 50 A/μs conditions. These values are measured and specified in the Electrical Characteristics table of the official Renesas datasheet (D10279EJ2V1DS), confirming suitability for quasi-resonant and snubberless flyback designs.

What is the thermal resistance from channel to case (Rth(ch-c)) for the 2SK2485-A?

The 2SK2485-A has a channel-to-case thermal resistance (Rth(ch-c)) of 1.25 °C/W, as stated in the Transient Thermal Resistance graph (Figure 4) of Renesas datasheet D10279EJ2V1DS. This low value reflects the TO-3P package's efficient heat transfer through the exposed metal fin (Pin 4), enabling 100 W power dissipation at Tc = 25 °C without forced cooling.

Can the 2SK2485-A be used in avalanche mode, and what are its rated limits?

Yes, the 2SK2485-A is explicitly rated for single-pulse avalanche operation: IAS = 6.0 A and EAS = 42.3 mJ, tested with starting Tch = 25 °C, RG = 25 Ω, and VGS = 20 V → 0 V. These values are documented in the Absolute Maximum Ratings section and verified in Test Circuit 1 of Renesas datasheet D10279EJ2V1DS, supporting snubberless inductive switching in relay drivers and flyback transformers.

What is the gate threshold voltage range for the 2SK2485-A, and how does it affect drive requirements?

The 2SK2485-A has a gate-to-source cutoff voltage (VGS(off)) range of 2.5 V to 3.5 V at VDS = 10 V and ID = 1 mA. This means reliable enhancement-mode turn-on begins above ~3.5 V, and full enhancement (RDS(on) ≤ 2.8 Ω) requires VGS ≥ 10 V. Therefore, standard logic-level or dedicated MOSFET gate drivers capable of sourcing ≥10 V are necessary - the 2SK2485-A is not compatible with 3.3 V or 5 V-only drive signals.

2SK2485-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SK2485-A FAQ

1.How can I place an order for 2SK2485-A through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK2485-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK2485-A reliable?

The price and inventory of 2SK2485-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2485-A is usually 5 days.

3.What payment methods are accepted for 2SK2485-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2485-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK2485-A?

2SK2485-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK2485-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK2485-A?

For technical support, including 2SK2485-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2485-A requirements.

6.How does Aetrix verify that 2SK2485-A is sourced from the original manufacturer or authorized distributors?

All 2SK2485-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2485-A meets industry standards.

7.What is the process for return or replacement of 2SK2485-A?

All 2SK2485-A units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2485-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK2485-A part is unused and in its original packaging.

Return procedure for 2SK2485-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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