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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK2499-S-AZ

Name: 2SK2499-S-AZ
Brand: Renesas
SKU: 2SK2499-S-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK2499-S-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK2499-S-AZ.pdf

Description:: DISCRETE / POWER MOSFET

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Product details

Overview

2SK2499-S-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers R_DS(on) = 9 mΩ at V_GS = 10 V / I_D = 25 A, supports ±50 A DC drain current, and features built-in gate-source ESD protection diode. Its TO-220AB (MP-25) package enables robust thermal dissipation in convection-cooled systems.

For engineers reviewing the 2SK2499-S-AZ datasheet, 2SK2499-S-AZ pinout, 2SK2499-S-AZ application, or 2SK2499-S-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 250 mJ), low C_iss (3400 pF typ.), gate charge (Q_G = 152 nC), and operation under V_GSS = ±20 V with channel temperature up to 150 °C.

Technical Context

This device uses a planar vertical DMOS structure optimized for hard-switching applications requiring high pulsed current capability (I_D(pulse) = ±200 A, PW ≤ 10 µs). Its forward transfer admittance |y_fs| reaches 58 S at V_DS = 10 V / I_D = 25 A, enabling fast turn-on with low gate drive impedance sensitivity.

The integrated source-drain body diode exhibits V_F(S-D) = 0.92 V at I_F = 50 A and t_rr = 105 ns under di/dt = 100 A/µs, supporting synchronous rectification and freewheeling in buck and half-bridge topologies without external diode addition.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage in off-state; suitable for 48 V bus systems with margin.
R_DS(on)1	9 mΩ @ V_GS = 10 V, I_D = 25 A - Enables <1 W conduction loss at 25 A, reducing heatsink requirements.
I_D(DC)	±50 A - Continuous current rating at T_c = 25 °C; derates linearly above 25 °C case temperature.
E_AS	250 mJ - Single-pulse avalanche energy at T_ch = 25 °C; supports inductive load switching without snubber.
C_iss	3400 pF typ. @ V_DS = 10 V - Low input capacitance reduces gate drive power and improves switching speed control.
Q_G	152 nC @ V_DD = 48 V, I_D = 50 A - Determines minimum gate driver peak current (e.g., >1.5 A for 100 ns rise time).
t_r/t_f	360 ns each @ V_GS(on) = 10 V, R_G = 10 Ω - Predictable switching transitions enable accurate dead-time design in bridge circuits.

Pinout & Package

Package: TO-220AB (JEDEC), also designated MP-25 by Renesas. Case temperature (T_c) referenced to mounting surface; fin (pin 4) is electrically connected to drain and serves as primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal; requires 10 V for full enhancement; protected by internal G-S diode against ESD.
2 (Drain)	Main current output	High-side switching node; electrically tied to metal fin (pin 4); must be isolated from heatsink unless heatsink is grounded.
3 (Source)	Reference terminal	Return path for load current; defines local ground reference for gate drive; connects to body diode cathode.
4 (Fin/Drain)	Thermal & electrical drain extension	Integral part of drain metallization; provides mechanical mounting and thermal interface; not electrically isolated.

Key Features

Feature	Design Value
Low R_DS(on) at 4 V gate drive	R_DS(on)2 = 14 mΩ @ V_GS = 4 V - Enables logic-level compatibility with 3.3 V/5 V microcontrollers in low-voltage gate drive designs.
High avalanche ruggedness	I_AS = 50 A, E_AS = 250 mJ - Withstands unclamped inductive switching events without failure, eliminating need for external clamping circuits.
Built-in gate-source protection diode	ESD-rated diode between gate and source - Provides Class 2 HBM protection; reduces risk of gate oxide rupture during handling or board assembly.
Optimized for hard-switching	t_d(on)/t_d(off) = 55 ns / 480 ns - Fast turn-on and controlled turn-off minimize overlap losses in PWM converters operating up to 100 kHz.

Applications

DC Motor Drive	Industrial Power Supply
Use Scenario: Bidirectional 48 V brushed DC motor control in automated machinery with regenerative braking. IC Role / Device Role / Timing Role: High-side and low-side switching element in H-bridge configuration; handles continuous 30 A load current and 100 A peak surge. Use Value: Low R_DS(on) minimizes I²R heating during extended duty cycles; avalanche rating absorbs back-EMF spikes during abrupt stop commands.	Use Scenario: Primary-side switch in 500 W offline flyback or forward converter for factory automation controllers. IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 50% duty cycle; subjected to 60 V reflected output voltage and leakage inductance spikes. Use Value: 250 mJ avalanche energy safely clamps leakage spikes without snubber; 3400 pF C_iss ensures stable gate drive timing across temperature.
Uninterruptible Power System	Welding Equipment Inverter
Use Scenario: Battery-to-AC inverter stage in 1 kVA UPS with battery backup and line-interactive topology. IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional 40 A RMS current; exposed to bus transients during transfer switching. Use Value: ±20 V gate rating and 152 nC Q_G allow robust gate drive with standard isolated drivers; TO-220AB package supports forced-air cooling in compact enclosures.	Use Scenario: Output inverter stage in IGBT-assisted arc welding inverters requiring high peak current delivery. IC Role / Device Role / Timing Role: Low-side switch in full-bridge output stage; conducts 200 A pulse current for <10 µs during arc initiation. Use Value: ±200 A pulsed current rating and 1.67 °C/W channel-to-case thermal resistance enable short-duration high-power bursts without thermal runaway.

DC Motor Drive

Industrial Power Supply

Use Scenario: Bidirectional 48 V brushed DC motor control in automated machinery with regenerative braking.

IC Role / Device Role / Timing Role: High-side and low-side switching element in H-bridge configuration; handles continuous 30 A load current and 100 A peak surge.

Use Value: Low R_DS(on) minimizes I²R heating during extended duty cycles; avalanche rating absorbs back-EMF spikes during abrupt stop commands.

Use Scenario: Primary-side switch in 500 W offline flyback or forward converter for factory automation controllers.

IC Role / Device Role / Timing Role: Main power switch operating at 65 kHz with 50% duty cycle; subjected to 60 V reflected output voltage and leakage inductance spikes.

Use Value: 250 mJ avalanche energy safely clamps leakage spikes without snubber; 3400 pF C_iss ensures stable gate drive timing across temperature.

Uninterruptible Power System

Welding Equipment Inverter

Use Scenario: Battery-to-AC inverter stage in 1 kVA UPS with battery backup and line-interactive topology.

IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional 40 A RMS current; exposed to bus transients during transfer switching.

Use Value: ±20 V gate rating and 152 nC Q_G allow robust gate drive with standard isolated drivers; TO-220AB package supports forced-air cooling in compact enclosures.

Use Scenario: Output inverter stage in IGBT-assisted arc welding inverters requiring high peak current delivery.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge output stage; conducts 200 A pulse current for <10 µs during arc initiation.

Use Value: ±200 A pulsed current rating and 1.67 °C/W channel-to-case thermal resistance enable short-duration high-power bursts without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 12 mΩ @ 10 V; C_iss = 2700 pF; E_AS = 190 mJ; TO-220 package	Lower input capacitance but reduced avalanche energy; less robust under unclamped inductive stress	Prefer when gate drive power is critical and circuit includes active clamping.
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V; Q_G = 67 nC; E_AS = 110 mJ; TO-220 package	Higher on-resistance and lower avalanche rating; higher gate charge efficiency but lower peak current capability	Choose for cost-sensitive 24 V systems where 50 A DC is not required.

Compared with STP55NF06L and IRFZ44NPBF, the 2SK2499-S-AZ offers superior avalanche ruggedness and lower conduction loss at high current, making it preferred for industrial-grade 48 V switching where reliability under transient overload is mandatory.

Availability

2SK2499-S-AZ is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power systems, and welding equipment requiring stable component supply and long-term production continuity.

Supply support for 2SK2499-S-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The 2SK2499-S-AZ belongs to Renesas' legacy industrial power MOSFET product line, engineered for high-current, high-reliability switching in non-automotive industrial environments with Standard quality grade compliance.

FAQ

What is the maximum continuous drain current rating for the 2SK2499-S-AZ at 100 °C case temperature?

The 2SK2499-S-AZ has a DC drain current rating of ±50 A at T_c = 25 °C. At T_c = 100 °C, this is derated linearly using the specified thermal resistance R_th(ch-c) = 1.67 °C/W and maximum channel temperature of 150 °C. The resulting maximum continuous I_D(DC) is approximately ±30 A, confirmed by the "Total Power Dissipation vs. Case Temperature" curve on page 3 of the datasheet.

Does the 2SK2499-S-AZ have a built-in body diode, and what are its key conduction parameters?

Yes, the 2SK2499-S-AZ integrates a source-drain body diode. Its forward voltage is V_F(S-D) = 0.92 V at I_F = 50 A and V_GS = 0, with reverse recovery time t_rr = 105 ns and Q_rr = 265 nC under di/dt = 100 A/µs. These values are measured with the gate grounded, confirming diode operation independent of MOSFET channel state.

Can the 2SK2499-S-AZ be used in a synchronous rectifier configuration?

No - the 2SK2499-S-AZ is not optimized for synchronous rectification. Its body diode has relatively high V_F(S-D) (0.92 V) and slow t_rr (105 ns), and the device lacks dedicated synchronous control features such as integrated gate drivers or adaptive dead-time logic. For synchronous rectification, discrete low-V_F Schottky diodes or purpose-built SR controllers paired with logic-level MOSFETs are recommended instead of the 2SK2499-S-AZ.

What is the gate-to-source leakage current specification for the 2SK2499-S-AZ, and how does it impact high-impedance gate drive designs?

The gate-to-source leakage current I_GSS for the 2SK2499-S-AZ is ±10 µA at V_GSS = ±20 V and V_DS = 0. This low leakage supports stable gate bias in high-impedance drive circuits (e.g., RC-based timing or optocoupler-isolated gates), minimizing unintended turn-on due to accumulated gate charge. However, external gate resistors below 100 kΩ are still recommended to ensure reliable turn-off in noisy industrial environments.

Is the 2SK2499-S-AZ RoHS compliant and lead-free?

Yes, the 2SK2499-S-AZ is RoHS compliant and lead-free. Per Renesas' environmental policy and the "RoHS Directive" reference in Note 10 of the datasheet, all standard-grade products including the 2SK2499-S-AZ meet EU RoHS requirements. The "-AZ" suffix specifically denotes lead-free, halogen-free packaging per Renesas' standard industrial product marking convention.

2SK2499-S-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK2499-S-AZ FAQ

1.How can I place an order for 2SK2499-S-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK2499-S-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK2499-S-AZ reliable?

The price and inventory of 2SK2499-S-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2499-S-AZ is usually 5 days.

3.What payment methods are accepted for 2SK2499-S-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2499-S-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK2499-S-AZ?

2SK2499-S-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK2499-S-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK2499-S-AZ?

For technical support, including 2SK2499-S-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2499-S-AZ requirements.

6.How does Aetrix verify that 2SK2499-S-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK2499-S-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2499-S-AZ meets industry standards.

7.What is the process for return or replacement of 2SK2499-S-AZ?

All 2SK2499-S-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2499-S-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK2499-S-AZ part is unused and in its original packaging.

Return procedure for 2SK2499-S-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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