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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK2499-Z-AZ

Name: 2SK2499-Z-AZ
Brand: Renesas
SKU: 2SK2499-Z-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK2499-Z-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK2499-Z-AZ.pdf

Description:: POWER FIELD-EFFECT TRANSISTOR

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Product details

Overview

2SK2499-Z-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers R_DS(on) = 9 mΩ at V_GS = 10 V / I_D = 25 A, supports ±200 A pulsed drain current, and features built-in gate-source ESD protection diode. Its TO-220AB (MP-25) package enables robust thermal dissipation in convection-cooled systems.

For engineers reviewing the 2SK2499-Z-AZ datasheet, 2SK2499-Z-AZ pinout, 2SK2499-Z-AZ application, or 2SK2499-Z-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 250 mJ), low C_iss (3400 pF), and dual-threshold on-resistance performance across V_GS = 4 V and 10 V drive conditions.

Technical Context

This device operates as a unidirectional, enhancement-mode N-channel power switch with integrated source-drain body diode and gate-source protection diode. Its channel temperature rating of 150 °C and R_th(ch–c) = 1.67 °C/W support high-duty-cycle operation when mounted on heatsinks.

The 2SK2499-Z-AZ exhibits strong avalanche ruggedness (I_AS = 50 A, E_AS = 250 mJ) and fast switching dynamics (t_d(off) = 480 ns, Q_G = 152 nC), making it suitable for hard-switched DC–DC converters and H-bridge motor control where voltage transients and commutation losses must be tightly managed.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage range in 48 V systems.
R_DS(on)1	9 mΩ @ V_GS = 10 V, I_D = 25 A - Low conduction loss enabling >95% efficiency in 25 A continuous switching paths.
I_D(pulse)	±200 A - Supports short-duration surge currents during motor startup or fault recovery without thermal runaway.
E_AS	250 mJ - Energy-handling capability under single-pulse inductive switching; critical for snubberless flyback or buck converter reliability.
C_iss	3400 pF - Input capacitance value directly impacts gate drive power and turn-on speed in high-frequency PWM designs.
V_GS(off)	1.0–2.0 V - Gate threshold range ensures stable turn-off margin against noise in noisy industrial environments.
Q_G	152 nC - Total gate charge determines required driver peak current and influences switching transition time and losses.

Pinout & Package

2SK2499-Z-AZ uses the JEDEC TO-220AB (MP-25) through-hole package with isolated tab (drain-connected fin). Mounting requires electrically insulated heatsink interface due to direct drain-to-tab connection.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives voltage-controlled signal; requires ≥10 V for full enhancement; protected by internal G–S diode.
2 (Drain)	High-side power input	Connected to drain metallization and metal tab; must be electrically isolated from heatsink unless referenced to system ground.
3 (Source)	Power return/reference	Serves as common reference for gate drive and load current return; ties to PCB ground plane for low-inductance layout.
4 (Fin/Drain)	Thermal & electrical drain extension	Integral metal tab providing mechanical mounting and primary heat path; electrically identical to Pin 2 (Drain).

Key Features

Feature	Design Value
Low R_DS(on) at 4 V gate drive	R_DS(on)2 = 14 mΩ enables logic-level compatibility with 3.3 V/5 V microcontrollers in space-constrained industrial controls.
Built-in gate-source protection diode	ESD safeguard per human-body model; reduces need for external TVS but does not replace full gate protection circuitry.
High single-pulse avalanche energy	E_AS = 250 mJ allows reliable operation in inductive load switching without external clamping in many 48 V applications.
Low output capacitance (C_oss)	C_oss = 1600 pF minimizes turn-off losses and improves efficiency in hard-switched topologies above 50 kHz.

Applications

Industrial DC Motor Drive	48 V Telecom Power Supply
Use Scenario: H-bridge half-bridge leg in brushed DC motor controller for factory automation conveyors. IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional 30 A continuous current with 200 A surge tolerance. Use Value: Low R_DS(on) and high avalanche energy eliminate need for external snubbers, reducing BOM count and board area.	Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V input telecom DC–DC module. IC Role / Device Role / Timing Role: Main power switch in forward or active-clamp forward topology operating at 100–250 kHz. Use Value: 60 V V_DSS and 9 mΩ R_DS(on) support high-efficiency conversion while maintaining margin over 48 V nominal + transient spikes.
Uninterruptible Power System (UPS)	Industrial Battery Management Switch
Use Scenario: Bidirectional battery isolation switch in 48 V lithium-ion UPS inverters with regenerative braking. IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch enabling controlled charge/discharge with reverse current blocking. Use Value: Body diode VF = 0.92 V at 50 A and trr = 105 ns reduce conduction and recovery losses during freewheeling phases.	Use Scenario: Main disconnect switch between 48 V battery pack and load in industrial energy storage systems. IC Role / Device Role / Timing Role: High-reliability load switch rated for 50 A DC and 200 A fault pulses per UL/cUL requirements. Use Value: T_ch = 150 °C rating and R_th(ch–c) = 1.67 °C/W allow sustained operation under ambient temperatures up to 85 °C with standard heatsinking.

Industrial DC Motor Drive

48 V Telecom Power Supply

Use Scenario: H-bridge half-bridge leg in brushed DC motor controller for factory automation conveyors.

IC Role / Device Role / Timing Role: High-side or low-side power switch handling bidirectional 30 A continuous current with 200 A surge tolerance.

Use Value: Low R_DS(on) and high avalanche energy eliminate need for external snubbers, reducing BOM count and board area.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V input telecom DC–DC module.

IC Role / Device Role / Timing Role: Main power switch in forward or active-clamp forward topology operating at 100–250 kHz.

Use Value: 60 V V_DSS and 9 mΩ R_DS(on) support high-efficiency conversion while maintaining margin over 48 V nominal + transient spikes.

Uninterruptible Power System (UPS)

Industrial Battery Management Switch

Use Scenario: Bidirectional battery isolation switch in 48 V lithium-ion UPS inverters with regenerative braking.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel switch enabling controlled charge/discharge with reverse current blocking.

Use Value: Body diode VF = 0.92 V at 50 A and trr = 105 ns reduce conduction and recovery losses during freewheeling phases.

Use Scenario: Main disconnect switch between 48 V battery pack and load in industrial energy storage systems.

IC Role / Device Role / Timing Role: High-reliability load switch rated for 50 A DC and 200 A fault pulses per UL/cUL requirements.

Use Value: T_ch = 150 °C rating and R_th(ch–c) = 1.67 °C/W allow sustained operation under ambient temperatures up to 85 °C with standard heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP50N055T	V_DSS = 55 V, R_DS(on) = 5.5 mΩ @ 10 V, TO-220 package, no integrated G–S diode.	Limited to ≤55 V systems; lower on-resistance benefits ultra-high-efficiency designs but requires external gate protection.	Preferred where 55 V max bus voltage is acceptable and gate drive design includes discrete ESD protection.
IRFZ44NPBF	V_DSS = 55 V, R_DS(on) = 28 mΩ @ 10 V, TO-220, no avalanche rating specified in datasheet.	Lower cost but significantly higher conduction loss and uncharacterized avalanche behavior limits use in inductive switching.	Suitable only for non-critical, low-frequency, low-surge applications such as simple lamp dimming or fan control.

Compared with IXTP50N055T and IRFZ44NPBF, the 2SK2499-Z-AZ provides superior avalanche ruggedness (250 mJ), tighter V_GS(off) control, and integrated gate protection-making it preferable for industrial motor drives and telecom power where reliability under transient stress is mandatory.

Availability

2SK2499-Z-AZ is available at Aetrix Electronics and suitable for industrial motor drives, 48 V telecom power supplies, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 2SK2499-Z-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.

The 2SK2499-Z-AZ belongs to Renesas' legacy power MOSFET product line targeting high-current, high-reliability industrial switching applications with emphasis on avalanche robustness and thermal stability.

FAQ

What is the maximum continuous drain current rating for the 2SK2499-Z-AZ?

The 2SK2499-Z-AZ is rated for ±50 A DC drain current at T_c = 25 °C. Actual continuous current capability depends on PCB layout, heatsinking, and ambient temperature; derating is required above 25 °C case temperature per the datasheet's PT vs. TC curve. For sustained 40 A operation, a heatsink maintaining T_c ≤ 60 °C is recommended.

Does the 2SK2499-Z-AZ have a specified avalanche energy rating?

Yes, the 2SK2499-Z-AZ has a single-pulse avalanche energy rating of E_AS = 250 mJ at starting channel temperature of 25 °C, with test conditions V_DD = 30 V, R_G = 25 Ω, and V_GS stepped from 20 V to 0 V. This rating is validated per JEDEC JESD24-1 and supports reliable inductive switching without external clamping in many industrial applications.

Is the 2SK2499-Z-AZ pin-compatible with other TO-220AB N-channel MOSFETs?

The 2SK2499-Z-AZ uses standard TO-220AB (MP-25) pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain-connected fin. While mechanical footprint and terminal assignment match JEDEC TO-220AB, electrical characteristics-including R_DS(on), Q_G, and avalanche rating-are unique to the 2SK2499-Z-AZ and not guaranteed across other part numbers.

What is the role of the built-in gate-source protection diode in the 2SK2499-Z-AZ?

The built-in gate-source diode in the 2SK2499-Z-AZ provides electrostatic discharge (ESD) protection per human-body model, limiting gate voltage excursion during handling or board insertion. However, it does not replace external gate protection circuits needed for operational overvoltage events (e.g., Miller-induced spikes), and Renesas explicitly states that "an additional protection circuit is externally required" for full system robustness.

Can the 2SK2499-Z-AZ be used in surface-mount applications?

No-the 2SK2499-Z-AZ is packaged exclusively in the through-hole TO-220AB (MP-25) variant. Although Renesas offers a surface-mount version designated 2SK2499-Z (MP-25Z), the -AZ suffix confirms this part is the through-hole variant with isolated fin. Surface-mount alternatives require selecting different part numbers with verified MP-25Z packaging and requalified thermal performance.

2SK2499-Z-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK2499-Z-AZ FAQ

1.How can I place an order for 2SK2499-Z-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK2499-Z-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK2499-Z-AZ reliable?

The price and inventory of 2SK2499-Z-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2499-Z-AZ is usually 5 days.

3.What payment methods are accepted for 2SK2499-Z-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2499-Z-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK2499-Z-AZ?

2SK2499-Z-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK2499-Z-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK2499-Z-AZ?

For technical support, including 2SK2499-Z-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2499-Z-AZ requirements.

6.How does Aetrix verify that 2SK2499-Z-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK2499-Z-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2499-Z-AZ meets industry standards.

7.What is the process for return or replacement of 2SK2499-Z-AZ?

All 2SK2499-Z-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2499-Z-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK2499-Z-AZ part is unused and in its original packaging.

Return procedure for 2SK2499-Z-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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