Renesas 2SK2511-A

Overview

2SK2511-A from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor control circuits. It delivers R_DS(on)1 = 27 mΩ max at V_GS = 10 V / I_D = 20 A, supports ±40 A DC drain current, and features a built-in gate-source ESD protection diode. Its TO-3P (MP-88) package enables robust thermal dissipation up to 80 W at T_C = 25 °C.

For engineers reviewing the 2SK2511-A datasheet, 2SK2511-A pinout, 2SK2511-A application, or 2SK2511-A equivalent, key selection criteria include its dual-threshold on-resistance performance (27 mΩ @ 10 V, 40 mΩ @ 4 V), low C_iss = 1210 pF typical, and body diode reverse recovery time t_rr = 70 ns - critical for synchronous rectification and hard-switched SMPS designs.

Technical Context

The 2SK2511-A employs a vertical DMOS structure optimized for low conduction loss and fast switching in unidirectional power conversion stages. Its gate threshold voltage V_GS(off) = 1.0–2.0 V ensures reliable turn-on with standard logic-level drivers while maintaining noise immunity.

It integrates a monolithic source-drain body diode with V_F(S-D) = 1.0 V at I_F = 40 A and Q_rr = 140 nC, enabling use in freewheeling and regenerative braking paths without external diodes - provided reverse recovery stress remains within safe operating area limits.

Key Specifications

Pinout & Package

2SK2511-A uses the TO-3P (MP-88) package: insulated metal tab (Drain-connected fin), 4-pin through-hole layout with integral heat-spreading base. Mounting requires mechanical isolation from chassis ground unless Drain is referenced to system ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP40NF60 and IXTH30N60L2, the 2SK2511-A provides the lowest R_DS(on) and C_iss among 60 V-class TO-3P MOSFETs, making it optimal for compact, high-efficiency 48 V power conversion where thermal density and switching loss are critical.

Availability

2SK2511-A is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power systems, and DC-DC power supplies requiring stable component supply and long-term obsolescence management.

Supply support for 2SK2511-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SK2511-A belongs to Renesas' legacy power MOSFET product line targeting high-current industrial switching applications with emphasis on low R_DS(on), fast body diode recovery, and rugged TO-3P packaging.

FAQ

What is the maximum continuous drain current rating for the 2SK2511-A?

The 2SK2511-A has a rated continuous drain current I_D(DC) of ±40 A at case temperature T_C = 25 °C. This rating decreases linearly with rising case temperature, reaching zero at T_C ≈ 125 °C per the derating curve. Actual usable current depends on PCB copper area, heatsink thermal resistance, and ambient conditions - always verify junction temperature stays below 150 °C in final design using 2SK2511-A's R_th(ch-c) = 1.56 °C/W.

Does the 2SK2511-A have a built-in body diode, and what are its key parameters?

Yes, the 2SK2511-A integrates a source-drain body diode with forward voltage V_F(S-D) = 1.0 V at I_F = 40 A and reverse recovery time t_rr = 70 ns under specified test conditions (di/dt = 100 A/µs). Its Q_rr = 140 nC confirms suitability for freewheeling in hard-switched topologies. The diode is intrinsic to the MOSFET structure and cannot be disabled - ensure commutation paths account for its recovery behavior in 2SK2511-A-based designs.

What gate drive voltage is required to fully enhance the 2SK2511-A?

The 2SK2511-A achieves its specified R_DS(on)1 = 27 mΩ max with V_GS = 10 V, but remains functional down to V_GS = 4 V, where R_DS(on)2 = 40 mΩ max. Its gate threshold voltage V_GS(off) ranges from 1.0 to 2.0 V, allowing compatibility with 3.3 V and 5 V logic controllers. For minimal conduction loss, drive 2SK2511-A with ≥10 V; for space-constrained or low-voltage systems, 4–5 V operation is viable with acceptable R_DS(on) trade-off.

Can the 2SK2511-A be used in parallel configurations?

Yes, the 2SK2511-A supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing as temperature rises. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (e.g., 10 Ω) to damp oscillation. Thermal coupling between devices must be uniform - mount all 2SK2511-A units on the same heatsink with identical mounting pressure and thermal interface material.

Is the 2SK2511-A RoHS compliant and what quality grade does it carry?

The 2SK2511-A meets RoHS Directive requirements for restricted substances, as confirmed by Renesas' environmental compliance documentation. It carries the "Standard" quality grade per Renesas' classification, meaning it is qualified for use in computers, office equipment, communications gear, industrial robots, and similar commercial/industrial applications - but not for automotive safety, aerospace, or life-support systems without explicit written approval from Renesas.