Renesas 2SK2515-A

Overview

2SK2515-A from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drive inverters. It delivers R_DS(on)1 = 9.0 mΩ max at V_GS = 10 V / I_D = 25 A, supports ±200 A pulsed drain current, and integrates a built-in gate-source ESD protection diode. Its TO-3P (MP-88) package enables robust thermal dissipation up to 150 W at T_c = 25 °C.

For engineers reviewing the 2SK2515-A datasheet, 2SK2515-A pinout, 2SK2515-A application, or 2SK2515-A equivalent, key selection criteria include avalanche energy rating (E_AS = 250 mJ), low-input capacitance (C_iss = 3400 pF typ.), dual R_DS(on) specs at 4 V and 10 V gate drive, and body diode reverse recovery performance (t_rr = 105 ns, Q_rr = 265 nC).

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its forward transfer admittance |y_fs| = 20–58 S at V_DS = 10 V / I_D = 25 A enables fast turn-on with moderate gate drive strength, while its gate charge profile (Q_G = 152 nC, Q_GD = 60 nC) indicates Miller plateau sensitivity requiring careful gate resistor selection (RG = 10 Ω used in switching tests).

The integrated source-drain body diode has V_F(S-D) = 0.92 V at I_F = 50 A and exhibits controlled reverse recovery (t_rr = 105 ns, Q_rr = 265 nC) suitable for freewheeling in non-synchronous buck or half-bridge configurations. Avalanche capability is characterized under defined conditions: I_AS = 50 A, E_AS = 250 mJ, starting T_ch = 25 °C, R_G = 25 Ω, V_GS = 20 V→0.

Key Specifications

Pinout & Package

2SK2515-A uses the TO-3P (MP-88) package: insulated metal tab, 4-terminal configuration with isolated fin (Drain) and case-grounded mounting surface. Thermal resistance from channel to case is R_th(ch-c) = 0.83 °C/W, enabling high-power dissipation when mounted on heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IXTH50N10L2, the 2SK2515-A offers balanced trade-offs: superior R_DS(on) and integrated gate protection versus STP60NF06, and faster switching with smaller package than IXTH50N10L2-making it optimal for space-constrained, medium-frequency industrial inverters.

Availability

2SK2515-A is available at Aetrix Electronics and suitable for industrial motor drives, server power OR-ing circuits, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for 2SK2515-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SK2515-A belongs to Renesas' legacy high-current discrete MOSFET product line, engineered for rugged industrial switching applications including motor control, power conversion, and uninterruptible power systems.

FAQ

What is the maximum gate-to-source voltage rating for the 2SK2515-A?

The 2SK2515-A has a maximum gate-to-source voltage rating of ±20 V. Exceeding this value risks permanent gate oxide damage. Although the device includes a built-in gate-source protection diode, external clamping (e.g., Zener diode) is recommended when using gate drivers with overshoot or in noisy environments. Always verify gate drive waveform integrity in final 2SK2515-A applications.

Does the 2SK2515-A have a specified avalanche energy rating, and under what test conditions?

Yes, the 2SK2515-A is rated for single-pulse avalanche energy E_AS = 250 mJ. This value is measured under strictly defined conditions: starting channel temperature T_ch = 25 °C, gate resistance R_G = 25 Ω, and gate voltage transition from 20 V to 0 V. The 2SK2515-A datasheet confirms this rating applies only to single-event stress; repetitive avalanche is not characterized and must be avoided in 2SK2515-A designs.

What is the role of Pin 4 (Fin) on the 2SK2515-A, and how should it be mounted?

Pin 4 (Fin) on the 2SK2515-A is electrically connected to the Drain and serves as the primary thermal conduction path to the heatsink. It must be mounted with thermal interface material onto an insulated heatsink surface unless system grounding architecture permits direct connection to chassis ground. Mechanical mounting torque and flatness tolerance are critical-excessive force may crack the package or compromise isolation. Always refer to the 2SK2515-A package drawing for torque specifications.

How does the 2SK2515-A's body diode performance compare to discrete Schottky diodes in freewheeling applications?

The 2SK2515-A's integrated body diode has V_F(S-D) = 0.92 V at 50 A and t_rr = 105 ns, making it suitable for moderate-frequency freewheeling but less efficient than optimized Schottky diodes (typically V_F < 0.5 V). Its Q_rr = 265 nC introduces measurable recovery loss during commutation. For high-efficiency designs above 50 kHz, external Schottky or SiC diodes remain preferable-but the 2SK2515-A body diode simplifies layout and cost in lower-frequency 2SK2515-A implementations.

Is the 2SK2515-A suitable for automotive applications, and what quality grade does it carry?

The 2SK2515-A is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, industrial robots, and similar commercial/industrial applications-not automotive or safety-critical systems. It lacks AEC-Q101 qualification, extended temperature validation, or zero-defect screening required for automotive use. For automotive-grade alternatives, consult Renesas' RAJ or RV series; the 2SK2515-A remains appropriate for non-automotive 2SK2515-A deployments.