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Renesas 2SK2529-90-E
- Part No.:
- 2SK2529-90-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK2529-90-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:557
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Product details
Overview
2SK2529-90-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and uninterruptible power supplies. It delivers 50 A continuous drain current, 60 V drain-source breakdown voltage, and 7 mΩ typical RDS(on) at VGS = 10 V, enabling low conduction loss in high-current 48 V industrial power stages.
For engineers reviewing the 2SK2529-90-E datasheet, 2SK2529-90-E pinout, 2SK2529-90-E application, or 2SK2529-90-E equivalent, key selection criteria include its 4 V gate drive compatibility with 5 V logic, 200 A pulsed drain capability, avalanche energy rating of 174 mJ, and TO-220CFM package thermal performance under forced-air cooling.
Technical Context
This MOSFET employs planar vertical DMOS architecture optimized for low RDS(on) and fast switching. Its gate threshold voltage (1.0–2.0 V) ensures reliable turn-on with standard TTL/CMOS drivers, while the 3550 pF input capacitance and 500 pF reverse transfer capacitance support stable operation up to 500 kHz switching frequencies in hard-switched topologies.
The integrated body diode exhibits 0.85 V forward voltage at 50 A and 135 ns reverse recovery time, making it suitable for synchronous rectification and freewheeling paths where diode conduction is unavoidable. Avalanche ruggedness is validated to 45 A single-pulse current with 174 mJ energy absorption at Tch = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage in off-state; supports 48 V bus systems with 20 % safety margin. |
| RDS(on) typ. | 7 mΩ at VGS = 10 V - Enables ≤ 8.75 W conduction loss at 50 A, reducing heatsink requirements. |
| ID cont. | 50 A at Tc = 25°C - Sustained current capability for high-power motor control and UPS inverters. |
| td(off) | 470 ns - Defines minimum dead-time requirement in half-bridge configurations to prevent shoot-through. |
| Ciss | 3550 pF - Determines gate driver power demand; requires ≥ 2 A peak drive for 500 kHz switching. |
| VGS(th) | 1.0–2.0 V - Ensures full enhancement with 3.3 V or 5 V microcontroller GPIO without level-shifting. |
| EAR | 174 mJ - Quantifies single-pulse avalanche energy handling; critical for inductive load switching reliability. |
Pinout & Package
2SK2529-90-E uses the TO-220CFM (RENESAS code PRSS0003AE-A) package: insulated tab, vertical mounting, 1.9 g mass, and 3.57°C/W junction-to-case thermal resistance. The plastic-insulated case enables direct heatsink mounting without additional isolation hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives voltage-controlled signal; 10 V drive yields minimal RDS(on); 4 V sufficient for full enhancement. |
| 2 (Drain) | High-side current path | Connected to positive rail or inductive load; electrically tied to metal tab for low-inductance thermal path. |
| 3 (Source) | Reference node | Serves as return path for load current and gate drive reference; must be low-impedance to minimize switching noise. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 7 mΩ typ. at 10 V gate drive reduces I²R losses by >30 % vs. comparable 60 V MOSFETs in 50 A applications. |
| 4 V gate drive compatibility | Guaranteed enhancement at VGS = 4 V enables direct interface with 5 V microcontrollers and gate drivers without boost circuitry. |
| Fast switching | 470 ns turn-off delay + 360 ns fall time supports >200 kHz PWM in SMPS designs with minimal switching loss. |
| Avalanche-rated | 174 mJ single-pulse energy rating allows safe operation during inductive load turn-off transients without external snubbers. |
| Optimized body diode | 135 ns trr and 0.85 V VDF at 50 A reduce reverse recovery losses in non-synchronous buck or flyback converters. |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
|
Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors in CNC spindles and conveyor systems. IC Role / Device Role / Timing Role: High-side power switch controlling phase current flow; synchronized with complementary low-side device. Use Value: 7 mΩ RDS(on) limits conduction loss to <9 W at 50 A, enabling compact heatsink design in space-constrained enclosures. |
Use Scenario: Primary-side switching element in 80 PLUS Titanium-certified 1.5 kW server power supply. IC Role / Device Role / Timing Role: Hard-switched MOSFET in LLC resonant converter primary leg operating at 300–500 kHz. Use Value: 3550 pF Ciss and 500 pF Crss enable predictable gate timing with 2 A peak drivers, minimizing dead-time uncertainty. |
| Uninterruptible Power Supply | EV Onboard Charger |
|
Use Scenario: Bidirectional DC-DC stage in line-interactive UPS converting 48 V battery to 380 V DC bus. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck-boost stage during battery discharge mode. Use Value: Body diode trr = 135 ns prevents cross-conduction loss during zero-voltage switching transitions. |
Use Scenario: Isolated DC-DC stage in 11 kW OBC converting 400 V battery to 14 V auxiliary supply. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology handling 25 A RMS current. Use Value: 200 A ID(pulse) rating accommodates inrush currents during cold-start without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXTH50N60L2 | RDS(on) = 22 mΩ at 10 V; higher VDSS = 600 V; TO-247 package. | Better suited for 400 V AC-input PFC stages; not optimal for 48 V bus due to higher conduction loss. | Select when higher voltage margin or higher avalanche energy (1.2 J) is required over low RDS(on). |
| STP55NF06L | RDS(on) = 12 mΩ at 10 V; same 60 V rating; TO-220FP package (non-insulated tab). | Requires insulating washer for heatsink mounting; lower pulse current (160 A) than 2SK2529-90-E's 200 A. | Choose when cost sensitivity outweighs thermal performance and avalanche robustness requirements. |
Compared with IXTH50N60L2 and STP55NF06L, the 2SK2529-90-E provides the lowest RDS(on) and highest pulsed current rating in the 60 V class with TO-220CFM insulation-making it optimal for high-efficiency, high-reliability 48 V industrial power conversion where thermal management and transient robustness are critical.
Availability
2SK2529-90-E is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and EV onboard chargers requiring stable component supply across multi-year production cycles.
Supply support for 2SK2529-90-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.
The 2SK2529-90-E belongs to Renesas' legacy power MOSFET product line engineered for high-current, high-reliability switching in industrial power conversion-prioritizing low on-resistance, fast switching, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current rating for 2SK2529-90-E?
The 2SK2529-90-E is rated for 50 A continuous drain current at case temperature Tc = 25°C. Derating applies above this temperature per the power vs. temperature curve in the datasheet; at Tc = 100°C, the usable current drops to approximately 28 A. This rating assumes proper heatsinking and is validated under DC or low-duty-cycle pulse conditions.
Does 2SK2529-90-E support gate drive from a 5 V microcontroller?
Yes, the 2SK2529-90-E is explicitly characterized for 4 V gate drive operation and achieves full enhancement at VGS = 4 V. With a gate threshold voltage range of 1.0–2.0 V and guaranteed RDS(on) ≤ 10 mΩ at 4 V, it interfaces directly with standard 5 V logic outputs without level-shifting circuitry.
What is the avalanche energy rating of 2SK2529-90-E and how is it tested?
The 2SK2529-90-E has a single-pulse avalanche energy rating of 174 mJ at channel temperature Tch = 25°C, measured with Rg ≥ 50 Ω and VDD = 25 V. This value reflects its ability to absorb inductive energy during unclamped inductive switching events, such as relay coil de-energization or motor phase commutation.
Is the TO-220CFM package of 2SK2529-90-E electrically insulated?
Yes, the TO-220CFM (PRSS0003AE-A) package used by 2SK2529-90-E features an insulated metal tab. The drain terminal is isolated from the heatsink mounting surface by a molded plastic barrier, eliminating the need for insulating washers or pads during mechanical assembly.
How does the body diode performance of 2SK2529-90-E compare to standard rectifiers?
The body diode of 2SK2529-90-E exhibits a forward voltage of 0.85 V at 50 A and reverse recovery time of 135 ns-comparable to fast recovery diodes in the same current class. Its soft recovery characteristic minimizes EMI generation during commutation, making it suitable for freewheeling and synchronous rectification where discrete diodes would otherwise be required.
2SK2529-90-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK2529-90-E FAQ
1.How can I place an order for 2SK2529-90-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK2529-90-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK2529-90-E reliable?
The price and inventory of 2SK2529-90-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2529-90-E is usually 5 days.
3.What payment methods are accepted for 2SK2529-90-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2529-90-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK2529-90-E?
2SK2529-90-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK2529-90-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK2529-90-E?
For technical support, including 2SK2529-90-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2529-90-E requirements.
6.How does Aetrix verify that 2SK2529-90-E is sourced from the original manufacturer or authorized distributors?
All 2SK2529-90-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2529-90-E meets industry standards.
7.What is the process for return or replacement of 2SK2529-90-E?
All 2SK2529-90-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2529-90-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK2529-90-E part is unused and in its original packaging.
Return procedure for 2SK2529-90-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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