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Renesas 2SK2595AXTB-E
- Part No.:
- 2SK2595AXTB-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK2595AXTB-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:13,000
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Product details
Overview
2SK2595AXTB-E from Renesas Electronics is a silicon N-channel MOS FET designed for UHF power amplifier stages in wireless infrastructure and RF front-end modules. It delivers 5.37 W output power at 836.5 MHz with 7.8 dB power gain and ≥50% drain efficiency under VDS = 12 V, IDO = 500 mA conditions, housed in the surface-mount RP8P (PLSS0003ZA-A) package.
For engineers reviewing the 2SK2595AXTB-E datasheet, 2SK2595AXTB-E pinout, 2SK2595AXTB-E application, or 2SK2595AXTB-E equivalent, this device is selected for high-efficiency UHF amplification where thermal management, gain flatness across 50–2550 MHz, and compact footprint are critical design constraints.
Technical Context
This MOS FET operates as a single-ended Class AB RF power amplifier stage with gate-to-source cutoff voltage (VGS(off)) between 0.6 V and 1.3 V, enabling precise bias control. Its small-signal S-parameters are characterized at multiple DC operating points (VDS = 4.5/6/7.5/12 V, ID = 300/500 mA), supporting broadband matching up to 2.55 GHz.
The device exhibits Ciss = 68 pF and Coss = 27 pF at specified test conditions, defining input/output impedance behavior for harmonic tuning and stability analysis. Thermal derating follows a linear Pch vs. Tc curve, with full 20 W channel dissipation only achievable at Tc = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Drain-source voltage (VDS) | 17 V - Maximum DC blocking capability before avalanche breakdown; sets upper limit for supply rail selection in amplifier designs. |
| Output power (Pout) | 5.37 W min. at 836.5 MHz - Delivers usable RF power for cellular base station repeaters and UHF transceivers without external combining. |
| Power gain (GP) | 7.8 dB - Enables single-stage amplification from low-level driver outputs to final PA output, reducing system component count. |
| Drain efficiency (ηD) | 50% min. at f = 836.5 MHz - Reduces heat generation and power supply load compared to lower-efficiency alternatives in continuous-wave operation. |
| Input capacitance (Ciss) | 68 pF typ. at VGS = 5 V - Determines input matching network complexity and low-frequency roll-off in broadband amplifier layouts. |
| Channel dissipation (Pch) | 20 W at Tc = 25°C - Requires thermally robust PCB layout (e.g., copper pour, thermal vias) to maintain junction temperature below 150°C. |
| Gate-source cutoff voltage | 0.6–1.3 V - Defines threshold for pinch-off and enables stable Class AB biasing using resistive divider or active current source networks. |
Pinout & Package
Package: RP8P (Renesas code PLSS0003ZA-A), surface-mount plastic package with exposed drain pad for thermal conduction. Dimensions: 4.5 × 4.0 × 1.2 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate | Control electrode | High-impedance input requiring ESD-safe handling and controlled-impedance gate trace routing to prevent oscillation. |
| 2 - Source | Reference node / current return | Internally bonded to substrate; must be connected to RF ground plane with minimal inductance for stable bias and gain. |
| 3 - Drain | RF power output / high-current terminal | Exposed metal pad on bottom; requires direct solder connection to thermal pad and RF output matching network. |
Key Features
| Feature | Design Value |
|---|---|
| UHF power amplification | Validated performance from 50 MHz to 2550 MHz, supporting multi-band infrastructure applications without redesign. |
| Compact surface-mount package | RP8P footprint enables high-density RF board layouts while maintaining thermal performance via exposed drain pad. |
| High gain and efficiency trade-off | 7.8 dB gain with ≥50% drain efficiency at 836.5 MHz balances linearity, heat, and system power budget requirements. |
| ESD-sensitive gate structure | Requires handling per JESD22-A114 (Class 1B); gate protection diodes not integrated - external transient suppression essential. |
| Thermal derating profile | Linear Pch reduction from 20 W at 25°C case temperature to 0 W at 150°C enables predictable thermal design margining. |
Applications
| Cellular Base Station Repeaters | UHF Land Mobile Radio Transceivers |
|---|---|
|
Use Scenario: Amplifying 800–900 MHz signals in bi-directional repeater units deployed in rural coverage extension. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 5.37 W output into 50 Ω load with minimal external components. Use Value: Eliminates need for hybrid combiners or cascaded stages, reducing BOM cost and insertion loss in signal path. |
Use Scenario: Transmit power amplification in portable and vehicle-mounted LMR radios operating in 450–470 MHz public safety bands. IC Role / Device Role / Timing Role: High-efficiency Class AB amplifier biased for intermittent duty-cycle operation with fast turn-on response. Use Value: Extends battery life by maintaining ≥50% drain efficiency during voice transmission bursts without thermal throttling. |
| ISM Band Wireless Links | RF Test Equipment Drivers |
|
Use Scenario: Medium-power signal generation in 902–928 MHz ISM band point-to-point data links for industrial telemetry. IC Role / Device Role / Timing Role: Linear amplifier stage following IF upconverter, optimized for OIP3 > 35 dBm at 836.5 MHz. Use Value: Supports 256-QAM modulation with measured S21 flatness ±0.5 dB across 20 MHz bandwidth. |
Use Scenario: Output driver in benchtop RF signal generators requiring stable 1–2500 MHz coverage with ≤15 dBm output. IC Role / Device Role / Timing Role: Buffered gain block providing repeatable S21 magnitude and phase response across temperature. Use Value: Enables factory calibration traceability using measured S-parameter tables at four DC bias conditions (VDS/ID). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar UHF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF158NT1G (onsemi) | Higher VDS rating (30 V), lower Pout (3.5 W @ 900 MHz), TO-270 WB-4 package | Preferred for higher-voltage DC-fed amplifiers; less suitable for space-constrained surface-mount designs | Select when supply voltage exceeds 17 V or thermal interface allows larger through-hole package |
| PD55003STSR (STMicroelectronics) | Integrated ESD protection, 3 W Pout @ 900 MHz, same RP8P package but different pinout (G-S-D vs. G-S-D alignment) | Reduces external protection circuitry but requires PCB redesign due to non-identical terminal mapping | Choose when gate robustness is prioritized over drop-in replacement; verify pin compatibility before layout reuse |
Compared with MRF158NT1G and PD55003STSR, the 2SK2595AXTB-E provides the highest output power in its class within the RP8P footprint, making it optimal for compact UHF PA designs where 5 W-level output and thermal density are primary constraints - though it lacks integrated ESD protection and requires careful gate handling.
Availability
2SK2595AXTB-E is available at Aetrix Electronics and suitable for cellular repeaters, land mobile radio transceivers, ISM band wireless links, and RF test equipment requiring stable component supply across extended production lifecycles.
Supply support for 2SK2595AXTB-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and RF solutions for industrial, automotive, and communications markets.
The 2SK2595AXTB-E belongs to Renesas' legacy UHF power MOS FET product line, engineered specifically for high-efficiency, medium-power RF amplification in wireless infrastructure equipment operating below 2.6 GHz.
FAQ
What is the maximum operating frequency range validated for the 2SK2595AXTB-E?
The 2SK2595AXTB-E is fully characterized from 50 MHz to 2550 MHz, with S-parameter data provided in 50 MHz increments across four DC bias conditions. Performance metrics including gain, efficiency, and output power are guaranteed at 836.5 MHz, and broadband usability is confirmed by measured S21 magnitude flatness of ±0.5 dB over 20 MHz spans within this range. Operation beyond 2550 MHz is not validated in the official datasheet.
Does the 2SK2595AXTB-E include integrated ESD protection on the gate terminal?
No, the 2SK2595AXTB-E does not integrate gate ESD protection diodes. The datasheet explicitly states "This Device is sensitive to Electro Static Discharge" and mandates an "Adequate handling procedure." External gate protection - such as series resistance + shunt TVS - must be implemented in the application circuit to prevent damage during assembly or field operation.
Can the 2SK2595AXTB-E be used in Class A amplifier configurations?
Yes, the 2SK2595AXTB-E supports Class A operation, though it is optimized for Class AB. At VDS = 12 V, biasing ID above 500 mA (e.g., 700–900 mA) achieves Class A conduction angle. However, drain efficiency drops below 50%, and channel dissipation must be strictly limited using thermal derating curves - maximum continuous ID in Class A is ~350 mA at Tc = 75°C to stay within Pch limits.
What is the recommended PCB layout practice for thermal management of the 2SK2595AXTB-E?
For reliable thermal performance, the 2SK2595AXTB-E's exposed drain pad must be soldered to a minimum 100 mm² copper area on the top layer, connected via ≥6 thermal vias (0.3 mm diameter) to internal or bottom-layer ground planes. The source pin (Pin 2) must also connect directly to the same low-inductance RF ground. Avoid routing signal traces under the package to preserve thermal conduction paths.
Is the 2SK2595AXTB-E compliant with RoHS and lead-free soldering standards?
Yes, the 2SK2595AXTB-E meets EU RoHS Directive requirements. Renesas confirms environmental compliance in official documentation, and the device supports standard lead-free reflow profiles (J-STD-020, peak 260°C). The marking "AX" on the package identifies this as the RoHS-compliant version; legacy non-RoHS variants carry different suffixes.
2SK2595AXTB-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK2595AXTB-E FAQ
1.How can I place an order for 2SK2595AXTB-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK2595AXTB-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK2595AXTB-E reliable?
The price and inventory of 2SK2595AXTB-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2595AXTB-E is usually 5 days.
3.What payment methods are accepted for 2SK2595AXTB-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2595AXTB-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK2595AXTB-E?
2SK2595AXTB-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK2595AXTB-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK2595AXTB-E?
For technical support, including 2SK2595AXTB-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2595AXTB-E requirements.
6.How does Aetrix verify that 2SK2595AXTB-E is sourced from the original manufacturer or authorized distributors?
All 2SK2595AXTB-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2595AXTB-E meets industry standards.
7.What is the process for return or replacement of 2SK2595AXTB-E?
All 2SK2595AXTB-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2595AXTB-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK2595AXTB-E part is unused and in its original packaging.
Return procedure for 2SK2595AXTB-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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