Renesas 2SK2596BXTL-E

Overview

2SK2596BXTL-E from Renesas Electronics is a silicon N-channel MOS FET designed for UHF power amplifier applications at 836.5 MHz, delivering 1.05 W output power, 12.2 dB power gain, and minimum 45% drain efficiency under 12 V/50 mA bias. It operates in the 100–2500 MHz band with S21 magnitude up to 11.71 at 100 MHz (V_DS = 12 V).

For engineers reviewing the 2SK2596BXTL-E datasheet, 2SK2596BXTL-E pinout, 2SK2596BXTL-E application, or 2SK2596BXTL-E equivalent, key selection criteria include UHF RF power handling, gate-to-source cutoff voltage (0.4–1.1 V), input/output capacitance (C_iss = 22 pF, C_oss = 10.5 pF), thermal derating above 25°C case temperature, and surface-mount compatibility in the UPAK R package.

Technical Context

This device functions as a single-ended, Class-AB UHF power amplifier stage with fixed 50 mA quiescent drain current. Its RF performance is characterized across four V_DS conditions (3.8 V, 6.0 V, 7.2 V, 12 V), showing monotonic S21 degradation and S11 improvement with increasing drain voltage - indicating enhanced output matching and gain stability at higher supply rails.

The MOS FET exhibits strong temperature dependence: channel power dissipation drops from 3.0 W at T_c = 25°C to ~1.0 W at T_c = 75°C, while V_GS(off) shifts from 0.8 V to 1.0 V over –25°C to +125°C ambient. Gate drive requires strict ±10 V compliance to avoid breakdown, and ESD sensitivity mandates handling per JESD22-A114.

Key Specifications

Pinout & Package

Package: UPAK R (RENESAS code PLZZ0004CA-A), surface-mount, 4-pin, lead-free, mass 0.050 g. Dimensions: 4.5 × 2.5 × 1.8 mm (L×W×H), with 0.53 mm max height and 0.44 mm max lead thickness.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar UHF power amplifier applications.

Compared with NE85633 and MRF5S9180HR3, the 2SK2596BXTL-E offers optimal balance of 1 W output, 12.2 dB gain, and compact UPAK R packaging for portable UHF transmitters - making it preferable for space-constrained, battery-powered designs operating near 836.5 MHz.

Availability

2SK2596BXTL-E is available at Aetrix Electronics and suitable for UHF power amplifier, land mobile radio, and ISM-band transmitter applications requiring stable component supply and traceable sourcing.

Supply support for 2SK2596BXTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and RF solutions for automotive, industrial, and communications markets.

The 2SK2596BXTL-E belongs to Renesas' legacy UHF power MOS FET product line, engineered specifically for high-efficiency, surface-mount RF power amplification in portable and infrastructure wireless equipment operating below 2.5 GHz.

FAQ

What is the maximum continuous drain current rating for the 2SK2596BXTL-E?

The 2SK2596BXTL-E has a maximum continuous drain current (I_D) rating of 0.4 A at T_a = 25°C. This limit is thermally constrained - actual usable current depends on PCB copper area, ambient temperature, and case temperature. At T_c = 75°C, the channel dissipation derates to ~1.0 W, reducing practical I_D under 12 V bias to approximately 83 mA for safe continuous operation. Always refer to the maximum channel power dissipation curve on page 2 of the 2SK2596BXTL-E datasheet.

Does the 2SK2596BXTL-E require external gate protection?

Yes, the 2SK2596BXTL-E requires external gate protection due to its ±10 V gate-to-source voltage (V_GS) rating and documented ESD sensitivity. A series gate resistor (10–47 Ω) and parallel Zener clamp (e.g., 8.2 V) are recommended to prevent transient overvoltage during hot-plug or RF coupling events. The device lacks integrated ESD structures, so handling per JESD22-A114 and board-level protection are mandatory for reliability - especially in handheld radio designs where the 2SK2596BXTL-E is commonly deployed.

Can the 2SK2596BXTL-E be used at 2.4 GHz for Wi-Fi applications?

No, the 2SK2596BXTL-E is not optimized for 2.4 GHz Wi-Fi operation. While S-parameter data shows measurable gain up to 2500 MHz (e.g., S21 = 0.23 at 2400 MHz, V_DS = 12 V), its power gain drops below 6 dB and output power falls below 100 mW - insufficient for IEEE 802.11b/g/n PA requirements. The device's peak performance is centered at 836.5 MHz (12.2 dB gain, 1.05 W), and its C_iss/C_oss values are tuned for sub-1 GHz matching. For 2.4 GHz, Renesas' 2SK3757 or similar 2.4 GHz-optimized MOS FETs are recommended instead of the 2SK2596BXTL-E.

What is the marking code printed on the 2SK2596BXTL-E package?

The 2SK2596BXTL-E is marked with "BX" on the top surface of the UPAK R package, as specified in the Outline diagram on page 1 of the datasheet. This two-character laser marking distinguishes it from other variants in the 2SK2596 family (e.g., 2SK2596B, 2SK2596BL). The "BX" code corresponds exclusively to the 2SK2596BXTL-E variant - confirming its tape-and-reel packaging (φ178 mm reel, 12 mm emboss taping) and RoHS-compliant construction.

How does drain efficiency (η_D) vary with input power for the 2SK2596BXTL-E?

Drain efficiency (η_D) for the 2SK2596BXTL-E increases with input power up to an optimum point, then declines - as shown in the "Output Power, Drain Efficiency vs. Input Power" plot on page 3 of the datasheet. At f = 836.5 MHz, V_DS = 12 V, and I_DQ = 50 mA, η_D rises from ~20% at 10 mW input to a peak of ≥45% at 63 mW input (1.05 W output), then decreases to ~35% at 100 mW input. This nonlinearity confirms Class AB operation and informs bias optimization: the 2SK2596BXTL-E achieves best efficiency near its rated P_out, not at compression.