Renesas 2SK2725-E

Overview

2SK2725-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and SMPS applications. It features 500 V V_DSS, 5 A continuous drain current, 1.2 Ω typical R_DS(on) at V_GS = 10 V, and avalanche-rated operation up to 1.38 mJ. Its TO-220CFM package supports robust thermal dissipation in industrial power stages.

For engineers reviewing the 2SK2725-E datasheet, 2SK2725-E pinout, 2SK2725-E application, or 2SK2725-E equivalent, key selection criteria include its 500 V blocking capability, low gate charge (13.5 nC), fast switching times (t_d(on) = 11 ns, t_f = 50 ns), and integrated body diode with 200 ns reverse recovery time - critical for hard-switched flyback and resonant topologies.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for high-voltage switching with minimized Miller capacitance (C_rss = 55 pF) and balanced input/output capacitance (C_iss = 630 pF, C_oss = 250 pF). Its gate threshold voltage range (V_GS(off) = 2.5–3.5 V) ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity.

The device is rated for repetitive avalanche energy (E_AR = 1.38 mJ at T_ch = 25°C) and operates safely up to 150°C channel temperature. Its no-secondary-breakdown design and 30 W channel dissipation at T_c = 25°C enable stable operation under transient overloads without derating constraints typical of older bipolar devices.

Key Specifications

Pinout & Package

2SK2725-E uses the TO-220CFM (RENESAS code PRSS0003AE-A) package: insulated tab, vertical mounting, 1.9 g mass, and 15.0 mm height. The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP5NK50ZFP and IXTP50N10P, the 2SK2725-E uniquely balances 500 V capability, avalanche ruggedness, and moderate gate charge - making it the only option among the three suitable for universal-input offline SMPS without derating or supplemental protection.

Availability

2SK2725-E is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial motor drives, and DC-DC boost converters requiring stable component supply across multi-year production cycles.

Supply support for 2SK2725-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The 2SK2725-E belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for reliability-critical industrial power conversion where avalanche tolerance and SOA integrity are mandatory.

FAQ

What is the maximum continuous drain current rating for the 2SK2725-E at 100°C case temperature?

The 2SK2725-E supports 5 A continuous drain current at T_c = 25°C. At 100°C case temperature, derating applies per the power vs. temperature curve: channel dissipation drops to ~12 W, limiting ID to approximately 2.2 A for sustained operation without exceeding 150°C channel temperature. Always verify thermal design using the normalized transient thermal impedance chart on page 5 of the datasheet.

Does the 2SK2725-E have a fully insulated package, and how should the tab be handled in PCB layout?

Yes, the 2SK2725-E uses the TO-220CFM package with an electrically insulated tab (PRSS0003AE-A). The tab connects internally to the Drain terminal but is isolated from the mounting surface by a dielectric coating. When mounting to a heatsink, no additional insulator is required - however, ensure the PCB footprint does not short the tab to adjacent copper, and maintain ≥1.5 mm creepage distance to other potentials.

Can the 2SK2725-E be driven directly by a 3.3 V microcontroller GPIO pin?

No - the 2SK2725-E has a gate threshold voltage range of 2.5–3.5 V and requires ≥10 V V_GS to achieve its specified 1.2 Ω R_DS(on). Driving it with 3.3 V results in incomplete turn-on (R_DS(on) > 5 Ω), excessive conduction loss, and thermal runaway risk. A dedicated gate driver IC (e.g., TC4420) or level-shifting circuit is mandatory for reliable operation.

What is the significance of the "-E" suffix in the 2SK2725-E part number?

The "-E" suffix denotes the tape-and-reel or tube packaging variant per Renesas' ordering convention: 2SK2725-E ships in tubes containing 600 units, intended for through-hole assembly. It shares identical electrical characteristics, thermal performance, and mechanical dimensions with the base 2SK2725 designation - the suffix reflects only packaging format, not functional differentiation.

How does the body diode performance of the 2SK2725-E compare to discrete ultrafast diodes in flyback snubber circuits?

The 2SK2725-E's integrated body diode has a 200 ns reverse recovery time (t_rr) and 0.95 V forward drop at 5 A - comparable to mid-tier ultrafast diodes like MUR420. While usable for low-frequency freewheeling, it is not optimized for high-frequency snubbing. For >100 kHz applications, pairing the 2SK2725-E with an external 600 V ultrafast diode (e.g., BYV26E) yields lower loss and reduced EMI versus relying solely on the intrinsic diode.