Renesas 2SK2727-E

Overview

2SK2727-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and SMPS primary-side switching applications. It features 500 V V_DSS, 10 A continuous drain current, 0.75 Ω typical R_DS(on) at V_GS = 10 V, and avalanche-rated operation up to 5.55 mJ.

For engineers reviewing the 2SK2727-E datasheet, 2SK2727-E pinout, 2SK2727-E application, or 2SK2727-E equivalent, this device is selected for robust high-voltage switching where low conduction loss, fast turn-on/turn-off (t_d(on) = 20 ns, t_f = 50 ns), and integrated body diode recovery (t_rr = 300 ns) are critical in industrial power stages.

Technical Context

This MOSFET uses a planar vertical DMOS structure optimized for high-voltage blocking and low gate charge (Q_g = 21 nC). Its gate threshold voltage V_GS(off) ranges from 2.5 V to 3.5 V, enabling reliable enhancement-mode operation with standard 10 V gate drive.

The TO-3P package provides low thermal resistance (θ_ch–c = 1.25 °C/W) and flanged metal mounting for efficient heat dissipation in high-power linear and switching topologies. Avalanche ruggedness is validated under repetitive conditions with I_AP = 10 A and R_g ≥ 50 Ω.

Key Specifications

Pinout & Package

2SK2727-E is housed in a TO-3P (RENESAS code PRSS0004ZE-A) package with isolated flange, rated for high-voltage isolation and mechanical robustness in industrial environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP10NK50ZFP and IXTP10N50D2, the 2SK2727-E offers superior thermal management via its isolated TO-3P flange, balanced Q_g/R_DS(on) trade-off, and validated avalanche performance-making it optimal for industrial-grade 50–200 kHz hard-switched power stages requiring long-term reliability.

Availability

2SK2727-E is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for 2SK2727-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK2727-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for ruggedized switching in industrial power conversion where reliability under repetitive avalanche stress and thermal stability are mandatory.

FAQ

What is the maximum continuous drain current rating for the 2SK2727-E?

The 2SK2727-E has a continuous drain current (I_D) rating of 10 A at T_c = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature - for example, it drops to approximately 6.5 A at T_c = 75°C per the power vs. temperature derating curve in the datasheet. The 2SK2727-E must not be operated beyond its Safe Operating Area (SOA) limits under pulsed or linear-mode conditions.

Does the 2SK2727-E have an integrated body diode, and what are its key parameters?

Yes, the 2SK2727-E includes an integral body diode rated for 10 A reverse drain current (I_DR) and 300 ns reverse recovery time (t_rr) at I_F = 10 A and di_F/dt = 100 A/µs. Its forward voltage (V_DF) is 1.0 V typical at I_D = 10 A and V_GS = 0. These characteristics make the 2SK2727-E suitable for freewheeling and bidirectional current paths in bridge configurations without external diodes.

What is the gate threshold voltage range for the 2SK2727-E, and how does it affect drive requirements?

The 2SK2727-E has a gate-to-source cutoff voltage (V_GS(off)) range of 2.5 V to 3.5 V at I_D = 1 mA. This confirms its enhancement-mode behavior and ensures full enhancement at V_GS ≥ 10 V. The relatively narrow threshold window improves consistency in parallel operation and simplifies gate driver design - the 2SK2727-E reliably switches on with standard 10 V logic-level drivers and remains off below 2.5 V, minimizing shoot-through risk.

Can the 2SK2727-E be used in avalanche mode, and what are the validated conditions?

Yes, the 2SK2727-E is explicitly avalanche-rated with a single-pulse avalanche energy (E_AR) of 5.55 mJ at T_ch = 25°C and R_g ≥ 50 Ω. It supports repetitive avalanche up to I_AP = 10 A under specified pulse conditions (PW ≤ 10 µs, duty ≤ 1%). The 2SK2727-E must not be subjected to avalanche stress outside these validated limits - sustained operation in linear or unclamped inductive switching requires verification against the SOA and transient thermal impedance curves.

What is the thermal resistance from channel to case (θ_ch–c) for the 2SK2727-E, and how does it impact heatsink selection?

The 2SK2727-E has a channel-to-case thermal resistance (θ_ch–c) of 1.25 °C/W, measured under JEDEC-standard conditions. This value directly determines the required heatsink thermal resistance: for example, to maintain T_ch ≤ 125°C at 100 W dissipation with T_c = 75°C, the total system θ_{case–ambient} must be ≤ 50 °C/W. The 2SK2727-E's TO-3P flange enables direct bolt-down mounting to large heatsinks, making it well-suited for high-power industrial applications where thermal margin is critical.