Renesas 2SK2729-E

Overview

2SK2729-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and SMPS applications. It features 500 V V_DSS, 20 A continuous drain current (I_D), 0.24 Ω typical R_DS(on) at V_GS = 10 V, and avalanche-rated operation up to 22 mJ. Its TO-3P package supports high-power thermal dissipation in industrial power supplies.

For engineers reviewing the 2SK2729-E datasheet, 2SK2729-E pinout, 2SK2729-E application, or 2SK2729-E equivalent, key selection criteria include its 500 V blocking capability, low gate charge (55 nC), fast switching times (t_d(on) = 45 ns, t_f = 85 ns), integrated body diode with 400 ns reverse recovery, and avalanche ruggedness-critical for flyback and hard-switched topologies.

Technical Context

The 2SK2729-E employs a planar vertical DMOS structure optimized for high-voltage, medium-current switching. Its gate threshold voltage (V_GS(off)) ranges from 2.5 V to 3.5 V, enabling compatibility with standard 10 V gate drivers while maintaining low leakage (I_DSS ≤ 10 µA at 500 V). The device integrates an intrinsic body diode rated for 20 A reverse conduction and 400 ns trr under 100 A/µs di/dt stress.

Thermal design is supported by a 0.83°C/W junction-to-case thermal resistance and 150°C maximum channel temperature. Its safe operating area (SOA) is defined up to 10 ms single-pulse at T_c = 25°C, with derating above 25°C case temperature-enabling robust operation in high-reliability industrial power stages without external snubbers in many cases.

Key Specifications

Pinout & Package

2SK2729-E is housed in a TO-3P (PRSS0004ZE-A) package with isolated flange, rated for high-voltage isolation and 150 W channel dissipation at T_c = 25°C. The metal flange serves as the Drain terminal and provides mechanical mounting and thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP20NM50FP and IXTH20N50L2, the 2SK2729-E delivers identical current/voltage ratings with lower R_DS(on) and proven avalanche ruggedness in TO-3P-a thermally superior package for high-power density designs requiring minimal heatsink volume.

Availability

2SK2729-E is available at Aetrix Electronics and suitable for industrial SMPS, AC motor drives, DC-DC boost converters, and uninterruptible power supplies requiring stable component supply and long-lifecycle support.

Supply support for 2SK2729-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.

The 2SK2729-E belongs to Renesas' high-voltage discrete MOSFET product line, engineered specifically for rugged, high-efficiency power conversion in industrial equipment where reliability under repetitive stress and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for the 2SK2729-E?

The 2SK2729-E has a maximum continuous drain current (I_D) of 20 A at T_c = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature-dropping to approximately 12 A at T_c = 100°C. The device also supports 80 A pulsed drain current for durations ≤10 µs, making it suitable for surge-tolerant industrial power stages. Always verify thermal design using the published 0.83°C/W θ_JC value in your specific layout.

Does the 2SK2729-E have an integrated body diode, and what are its key parameters?

Yes, the 2SK2729-E includes an intrinsic body diode rated for 20 A reverse current (I_DR). Its forward voltage (V_DF) is 1.0 V typical at 20 A and V_GS = 0, and its reverse recovery time (t_rr) is 400 ns under 100 A/µs di/dt stress. These values enable reliable freewheeling in half-bridge motor drives and reduce need for external diodes in many SMPS topologies. The diode's soft recovery characteristic minimizes voltage overshoot during commutation.

What gate drive voltage is recommended for optimal performance of the 2SK2729-E?

The 2SK2729-E is characterized and optimized for 10 V gate-to-source drive (V_GS), delivering its specified 0.24 Ω typical R_DS(on) and 55 nC total gate charge. Gate threshold voltage (V_GS(off)) is 2.5–3.5 V, so logic-level 5 V drivers will not fully enhance the device. For lowest conduction loss and fastest switching, use a gate driver capable of sourcing/sinking ≥2 A peak current and sustaining 10–15 V with tight regulation. Do not exceed ±30 V V_GSS under any condition.

Is the 2SK2729-E avalanche-rated, and how is this specified in the datasheet?

Yes, the 2SK2729-E is explicitly avalanche-rated: it guarantees 22 mJ single-pulse avalanche energy (E_AR) at T_ch = 25°C with R_g ≥ 50 Ω. This rating is measured per JEDEC JESD24-11 and applies to unclamped inductive switching events. The device's 20 A avalanche current (I_AP) rating further confirms its ability to withstand repetitive inductive turn-off stress-making it suitable for relay drivers, solenoid controls, and flyback converters without external snubbers.

What is the package type and thermal resistance of the 2SK2729-E?

The 2SK2729-E uses the TO-3P package (RENESAS code PRSS0004ZE-A), featuring an isolated metal flange that serves as the Drain terminal. Its junction-to-case thermal resistance (θ_JC) is 0.83°C/W, measured under standard test conditions (T_c = 25°C). This low value enables efficient heat transfer to external heatsinks-critical for maintaining 150°C maximum channel temperature in high-power industrial applications. Mounting torque and thermal interface material selection directly impact real-world thermal performance.