Renesas 2SK2736-E
- Part No.:
- 2SK2736-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK2736-E.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
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Inventory:3,081
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Product details
Overview
2SK2736-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching applications, featuring RDS(on) = 20 mΩ (typ.) at VGS = 10 V and ID = 15 A, 30 V VDSS, and 30 A continuous drain current. It supports 4 V gate drive and delivers fast switching with td(on) = 16 ns and tf = 90 ns, commonly used in DC-DC converters and motor drive half-bridges.
For engineers reviewing the 2SK2736-E datasheet, 2SK2736-E pinout, 2SK2736-E application, or 2SK2736-E equivalent, key selection criteria include low on-resistance at 4 V gate drive, body diode reverse recovery time (trr = 45 ns), thermal resistance (θch-c = 5.0°C/W), and TO-220CFM package compatibility with heatsink mounting.
Technical Context
The 2SK2736-E employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (VGS(off) = 1.0–2.0 V) enables reliable turn-on with standard logic-level drivers, while its Ciss = 750 pF and Crss = 210 pF support stable gate control under high dv/dt conditions.
Designed for unidirectional power flow, it integrates a robust body diode with VDF = 1.0 V (IF = 30 A) and trr = 45 ns, enabling efficient freewheeling in buck and flyback converters without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in off-state; sets upper limit for input/output rail voltage in step-down or H-bridge stages. |
| RDS(on) @ 10 V | 20 mΩ typ. - Conduction loss of ~4.5 W at 15 A; determines thermal design margin and efficiency in continuous conduction mode. |
| ID (continuous) | 30 A - Steady-state current capability at Tc = 25°C; requires heatsinking to sustain full rating in real-world PCB layouts. |
| tr/tf | 260 ns / 90 ns - Rise/fall times define minimum achievable switching frequency and EMI profile in PWM circuits. |
| trr | 45 ns - Body diode reverse recovery time; critical for minimizing shoot-through risk and voltage spikes in synchronous rectification. |
| Qg | Not specified in provided data - Gate charge not listed; design must rely on Ciss/Crss values for driver sizing. |
| Pch | 25 W @ Tc = 25°C - Channel dissipation limit defines safe operating area boundary under pulse or DC load conditions. |
Pinout & Package
2SK2736-E is housed in the TO-220CFM (RENESAS code PRSS0003AE-A) package - a variant of TO-220 with insulated tab and metal backside for direct heatsink mounting. The case is electrically connected to the drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives gate drive signal; requires ≥4 V to fully enhance; sensitive to ESD and overvoltage (±20 V max). |
| 2 (Drain) | High-side power terminal | Connected to switched high-voltage rail; electrically tied to metal tab and heatsink surface. |
| 3 (Source) | Power return/reference node | Serves as local ground reference for gate drive; carries full load current and influences layout grounding strategy. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4 V drive | RDS(on) = 35 mΩ typ. at VGS = 4 V - Enables direct interface with 3.3 V/5 V microcontrollers without level-shifting circuitry. |
| Fast switching performance | td(on) = 16 ns, tf = 90 ns - Reduces switching losses in high-frequency DC-DC converters (>100 kHz). |
| Integrated body diode | VDF = 1.0 V @ 30 A, trr = 45 ns - Supports freewheeling in non-synchronous topologies with predictable voltage drop and recovery behavior. |
| Thermal robustness | θch-c = 5.0°C/W - Allows 5°C temperature rise per watt dissipated when mounted on adequately sized heatsink. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down voltage regulation in industrial power supplies delivering 5–12 V at up to 20 A. IC Role / Device Role / Timing Role: High-side synchronous switch in fixed-frequency PWM topology; operates at 200–500 kHz. Use Value: Low RDS(on) minimizes conduction loss, while fast tf reduces overlap loss during dead-time transitions. | Use Scenario: Half-bridge H-bridge stage controlling bidirectional 24 V brushed motors in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element paired with complementary high-side FET; commutated at ≤20 kHz. Use Value: 4 V gate drive compatibility simplifies gate driver IC selection; body diode handles inductive kickback during PWM off-periods. |
| AC-DC Adapter Secondary Side | LED Constant-Current Driver |
Use Scenario: Secondary-side synchronous rectifier in 36 W offline flyback adapter for consumer electronics. IC Role / Device Role / Timing Role: Rectifying switch replacing Schottky diode; driven by transformer-coupled or controller-synchronized signal. Use Value: trr = 45 ns prevents reverse recovery oscillation; VDSS = 30 V matches typical secondary winding peak voltages. | Use Scenario: Constant-current switch in linear+PWM hybrid LED driver for architectural lighting (3–10 A output). IC Role / Device Role / Timing Role: Series-pass element modulated at 1–10 kHz to regulate average LED current. Use Value: RDS(on) = 20 mΩ ensures <0.5 V dropout at 10 A, reducing thermal load versus bipolar alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NF20 | VDSS = 200 V, RDS(on) = 42 mΩ @ 10 V, TO-220FP package (drain-isolated) | Higher voltage rating suits 100–200 V systems; higher RDS(on) increases conduction loss at 15 A | Select when >30 V blocking is required and gate drive ≥10 V is available. |
| IRFZ44NPBF | VDSS = 55 V, RDS(on) = 28 mΩ @ 10 V, TO-220AB package (non-insulated tab) | Wider voltage margin but no drain-isolation; requires insulating pad for heatsink mounting | Choose for cost-sensitive 48 V bus designs where isolation is managed externally. |
Compared with STP30NF20 and IRFZ44NPBF, the 2SK2736-E offers optimal balance of low 30 V VDSS, 4 V logic-level drive, and TO-220CFM insulation - making it uniquely suited for compact, thermally constrained 24–30 V power stages where gate drive voltage and heatsink safety are design priorities.
Availability
2SK2736-E is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and industrial power supplies requiring stable component supply and long-term manufacturability.
Supply support for 2SK2736-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The 2SK2736-E belongs to Renesas' legacy discrete power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 24–30 V industrial power conversion systems.
FAQ
What is the maximum gate-to-source voltage rating for the 2SK2736-E?
The 2SK2736-E has a maximum gate-to-source voltage rating (VGSS) of ±20 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits - including transient spikes from parasitic inductance - remain within this range, especially during hot-plug or fault conditions. The 2SK2736-E datasheet specifies this absolute maximum under all operating conditions.
Does the 2SK2736-E support logic-level gate drive?
Yes, the 2SK2736-E supports logic-level gate drive with guaranteed RDS(on) = 35 mΩ (typ.) at VGS = 4 V and ID = 15 A. Its gate threshold voltage (VGS(off)) ranges from 1.0 V to 2.0 V, allowing full enhancement using standard 3.3 V or 5 V microcontroller outputs. This eliminates need for gate driver ICs in many low-to-moderate power applications involving the 2SK2736-E.
What is the thermal resistance from channel to case for the 2SK2736-E?
The channel-to-case thermal resistance (θch-c) of the 2SK2736-E is 5.0°C/W, measured at Tc = 25°C. This value applies when the device is mounted to a heatsink with proper mechanical pressure and thermal interface material. It directly determines junction temperature rise under steady-state power dissipation and is critical for reliability validation in the 2SK2736-E's target applications.
Can the 2SK2736-E be used in synchronous rectification?
The 2SK2736-E can be used in synchronous rectification, but only in topologies where its body diode characteristics are acceptable. With trr = 45 ns and VDF = 1.0 V at 30 A, it performs well in medium-frequency flyback or forward converters. However, its lack of specified Qrr and absence of optimized body diode softness limit suitability in high-frequency ZVS or resonant designs where the 2SK2736-E may generate excessive ringing or loss.
Is the metal tab of the 2SK2736-E electrically isolated?
Yes, the metal tab of the 2SK2736-E is electrically isolated from internal circuitry and connected solely to the drain terminal. Its TO-220CFM package (RENESAS code PRSS0003AE-A) features an insulated mounting surface, enabling direct attachment to grounded heatsinks without additional isolation hardware. This simplifies thermal management and improves system safety in the 2SK2736-E's implementation.
2SK2736-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK2736-E FAQ
1.How can I place an order for 2SK2736-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK2736-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK2736-E reliable?
The price and inventory of 2SK2736-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2736-E is usually 5 days.
3.What payment methods are accepted for 2SK2736-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2736-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK2736-E?
2SK2736-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK2736-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK2736-E?
For technical support, including 2SK2736-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2736-E requirements.
6.How does Aetrix verify that 2SK2736-E is sourced from the original manufacturer or authorized distributors?
All 2SK2736-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2736-E meets industry standards.
7.What is the process for return or replacement of 2SK2736-E?
All 2SK2736-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2736-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK2736-E part is unused and in its original packaging.
Return procedure for 2SK2736-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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