Renesas 2SK2738-E

Overview

2SK2738-E from Renesas Electronics is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drivers, and uninterruptible power supplies. It features 60 V V_DSS, 40 A continuous drain current (I_D), 15 mΩ typical R_DS(on) at V_GS = 10 V, and TO-220CFM package with integrated body diode. Its 4 V gate drive compatibility enables direct interfacing with 5 V logic controllers.

For engineers reviewing the 2SK2738-E datasheet, 2SK2738-E pinout, 2SK2738-E application, or 2SK2738-E equivalent, key selection criteria include avalanche energy rating (137 mJ), fast switching times (t_d(on) = 20 ns, t_f = 200 ns), body diode reverse recovery time (70 ns), and thermal resistance (θ_ch-c = 4.17°C/W).

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and high dV/dt immunity. Its gate threshold voltage (V_GS(off) = 1.5–2.5 V) ensures reliable turn-on with standard TTL/CMOS logic, while the 200 pF Crss and 1500 pF Ciss support stable high-frequency operation up to several hundred kHz in hard-switched topologies.

The device integrates a fast-recovery body diode (V_DF = 0.95 V at 40 A, t_rr = 70 ns) suitable for synchronous rectification and freewheeling paths. Avalanche ruggedness is validated per JEDEC JESD24-11, with I_AP = 40 A and E_AR = 137 mJ under specified test conditions (R_g ≥ 50 Ω, T_ch = 25°C).

Key Specifications

Pinout & Package

2SK2738-E uses the TO-220CFM (RENESAS code PRSS0003AE-A) package: insulated tab, vertical mounting, 3-pin through-hole configuration with 1.9 g mass and 4.17°C/W channel-to-case thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP40NF60 and IRFZ44NPBF, the 2SK2738-E delivers superior efficiency in 48 V systems due to its 15 mΩ R_DS(on), provides inherent thermal mounting simplicity via insulated TO-220CFM, and offers verified avalanche ruggedness essential for UPS and industrial inverters.

Availability

2SK2738-E is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and switch-mode power supplies requiring stable component supply and long-term industrial availability.

Supply support for 2SK2738-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The 2SK2738-E belongs to Renesas' legacy high-speed power MOSFET product line, engineered for robust switching performance in industrial power conversion and motor control applications where reliability and avalanche tolerance are critical.

FAQ

What is the maximum gate-to-source voltage rating for the 2SK2738-E?

The 2SK2738-E has a maximum gate-to-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this voltage risks permanent gate oxide damage. Designers must ensure gate drive circuits limit V_GS within this range under all operating and transient conditions. The 2SK2738-E's gate structure is optimized for 4–10 V drive, making ±20 V the absolute safety ceiling-not the recommended operating level.

Does the 2SK2738-E have an integrated body diode, and what are its key parameters?

Yes, the 2SK2738-E includes an integrated body diode rated for 40 A reverse drain current (I_DR). Its forward voltage is 0.95 V at 40 A and V_GS = 0, and its reverse recovery time is 70 ns under specified test conditions (I_F = 40 A, di_F/dt = 50 A/µs). This diode supports freewheeling and synchronous rectification functions, and its fast recovery characteristic reduces switching losses in hard-switched topologies. The 2SK2738-E's body diode performance is fully characterized in the Electrical Characteristics table.

What thermal resistance value applies to the 2SK2738-E, and how is it measured?

The 2SK2738-E has a channel-to-case thermal resistance (θ_ch-c) of 4.17°C/W, measured under steady-state conditions at T_c = 25°C with the device mounted on a large copper heatsink. This value reflects heat flow from the silicon die to the metal tab surface and is used to calculate junction temperature rise: T_j = T_c + (P_diss × θ_ch-c). The 2SK2738-E's TO-220CFM package enables direct thermal coupling to heatsinks without insulating hardware due to its electrically isolated tab.

Can the 2SK2738-E be driven directly by a 5 V microcontroller GPIO pin?

The 2SK2738-E can be turned on by a 5 V logic signal due to its guaranteed gate threshold range (V_GS(off) = 1.5–2.5 V) and 4 V gate drive capability. However, a GPIO pin alone cannot supply the required peak gate current (~1.5 A) to charge its 1500 pF input capacitance quickly. A dedicated gate driver IC or discrete buffer stage is necessary to achieve the specified 20 ns turn-on delay and 180 ns rise time. Driving the 2SK2738-E directly from a GPIO will result in slow, lossy switching and potential thermal overstress.

What is the avalanche energy rating of the 2SK2738-E, and under what conditions is it valid?

The 2SK2738-E is rated for 137 mJ single-pulse avalanche energy (E_AR), measured at T_ch = 25°C with R_g ≥ 50 Ω and I_AP = 40 A. This rating applies only to unidirectional, non-repetitive inductive energy dissipation events-such as transformer leakage spikes or motor back-EMF transients-and does not imply unlimited repetitive avalanche capability. Operation beyond these conditions voids the rating. The 2SK2738-E's avalanche specification is validated per JEDEC JESD24-11 and documented in its Absolute Maximum Ratings table.