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Renesas 2SK2788VYWS-E
- Part No.:
- 2SK2788VYWS-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK2788VYWS-E.pdf
- Description:
- SMALL SIGNAL N-CHANNEL MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:682
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Product details
Overview
2SK2788VYWS-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in compact DC-DC converters and LED drivers, featuring RDS(on) = 0.12 Ω (typ, VGS = 10 V, ID = 1 A), VDSS = 60 V, and 4 V gate drive compatibility.
For engineers reviewing the 2SK2788VYWS-E datasheet, 2SK2788VYWS-E pinout, 2SK2788VYWS-E application, or 2SK2788VYWS-E equivalent, this device supports low-loss switching in space-constrained industrial control modules, battery-powered lighting systems, and auxiliary power rails where fast turn-on/turn-off (td(on) = 9 ns, tf = 35 ns) and thermal stability on alumina ceramic substrates are critical.
Technical Context
This MOSFET employs a planar vertical structure optimized for low conduction loss and rapid charge/discharge dynamics. Its 4 V gate threshold enables direct interface with 5 V logic and microcontroller GPIOs without level-shifting, while its body diode exhibits trr = 35 ns under 50 A/μs di/dt - suitable for synchronous rectification and flyback snubberless designs.
The device operates within a channel temperature range up to 150°C and delivers Pch = 1 W on a specified 12.5 × 20 × 0.7 mm alumina ceramic board. Its Ciss = 180 pF and Crss = 30 pF support stable high-frequency gate driving with minimal Miller-induced oscillation risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports input rails up to 48 V nominal with margin for transient spikes in industrial power supplies. |
| RDS(on) @ VGS = 10 V | 0.12 Ω typ - Enables ≤120 mW conduction loss at 1 A DC, reducing thermal load in sealed enclosures. |
| RDS(on) @ VGS = 4 V | 0.16 Ω typ - Ensures usable on-resistance with 5 V MCU outputs, eliminating need for external gate drivers. |
| td(on)/tf | 9 ns / 35 ns - Permits >10 MHz switching in resonant topologies without excessive switching loss penalty. |
| Ciss/Crss | 180 pF / 30 pF - Low reverse transfer capacitance minimizes gate-to-drain coupling during hard-switching transitions. |
| ID (continuous) | 2 A - Rated for sustained current in small-footprint buck converter high-side switches or LED string current paths. |
| VGS(off) | 1.0–2.0 V - Sharp turn-on characteristic improves noise immunity in electrically noisy factory-floor environments. |
Pinout & Package
2SK2788VYWS-E uses the UPAK (SC-62) surface-mount package (RENESAS code PLZZ0004CA-A), measuring 4.5 × 2.5 × 1.8 mm with gull-wing leads and a 0.53 mm max lead thickness. The package is optimized for thermal conduction via drain pads and compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting 4–10 V logic-level drive; low Qg enables fast switching with minimal gate driver power. |
| 2 (D) | Drain | Main high-side power node; internally connected to exposed drain pad for enhanced thermal dissipation on PCB copper. |
| 3 (S) | Source | Power return path and reference for gate drive; tied to ground or low-side switch source in half-bridge configurations. |
| 4 (D) | Drain (redundant) | Second drain connection - electrically identical to Pin 2, used to increase current capacity and thermal spreading. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4 V gate drive | 0.16 Ω typ - Eliminates need for gate boost circuits in 5 V control systems, simplifying BOM and layout. |
| Fast switching with low Crss | 30 pF - Reduces risk of false turn-on during high dv/dt events in motor drive half-bridges. |
| Integrated body diode | trr = 35 ns - Enables use in discontinuous conduction mode (DCM) flyback and active clamp forward converters without external diode. |
| Thermally robust packaging | Pch = 1 W on alumina ceramic board - Sustains continuous operation at elevated ambient temperatures in fanless industrial controls. |
| Logic-level compatible threshold | VGS(off) = 1.0–2.0 V - Provides reliable turn-on margin across voltage tolerances of 3.3 V and 5 V MCUs without external biasing. |
Applications
| LED Constant-Current Driver | Industrial DC-DC Converter |
|---|---|
Use Scenario: Driving 1–2 A white LED strings in programmable signage and machine vision lighting. IC Role / Device Role / Timing Role: High-side constant-current switch modulated at 1–10 kHz PWM frequency. Use Value: Low RDS(on) minimizes heat generation in sealed aluminum housings; fast fall time ensures precise dimming resolution. | Use Scenario: 24 V input to 5 V/2 A isolated or non-isolated buck regulator in PLC I/O modules. IC Role / Device Role / Timing Role: Primary switching element operating at 500 kHz–1 MHz with synchronous rectification. Use Value: 4 V gate compatibility allows direct STM32H7 GPIO control; low Ciss reduces gate driver losses. |
| Automated Test Equipment Power Rail | Smart Sensor Node Power Switch |
Use Scenario: Programmable 12–48 V output stage in benchtop power supplies and calibration sources. IC Role / Device Role / Timing Role: Precision-controlled high-side pass switch with overcurrent limiting feedback. Use Value: Tight VGS(off) distribution ensures consistent turn-on voltage across production lots, improving calibration repeatability. | Use Scenario: Load switching for LoRaWAN or NB-IoT sensor nodes powered by Li-SOCl₂ batteries. IC Role / Device Role / Timing Role: Low-quiescent-power enable switch isolating RF and sensing circuitry during sleep mode. Use Value: IDSS ≤ 10 μA prevents battery drain over multi-year deployments; compact UPAK footprint saves PCB area. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RQ1E080AP | RDS(on) = 0.085 Ω @ 4.5 V; higher Ciss = 320 pF; TO-220FP package (larger, through-hole) | Better conduction efficiency but slower switching and incompatible mounting; requires heatsink for >1 A continuous. | Select when thermal budget permits larger package and lower RDS(on) outweighs speed and size constraints. |
| Toshiba SSZ150B | RDS(on) = 0.15 Ω @ 4.5 V; tf = 50 ns; same UPAK footprint; RoHS-compliant but obsolete per Toshiba PDN-2022-01. | Direct footprint match but longer fall time increases switching loss above 300 kHz; no active production support. | Use only for legacy repair; not recommended for new designs due to lifecycle uncertainty. |
Compared with RQ1E080AP and SSZ150B, the 2SK2788VYWS-E offers optimal balance of speed (9 ns td(on)), logic-level drive (4 V), and compact UPAK packaging - making it preferred for space- and frequency-constrained embedded power stages where thermal management relies on PCB copper rather than external heatsinks.
Availability
2SK2788VYWS-E is available at Aetrix Electronics and suitable for industrial DC-DC converters, LED constant-current drivers, and smart sensor node power switches requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Renesas-authorized channels.
Supply support for 2SK2788VYWS-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.
The 2SK2788VYWS-E belongs to Renesas' legacy high-speed logic-level MOSFET product line, engineered for compact, thermally efficient power switching in cost-sensitive industrial control and lighting applications.
FAQ
What is the maximum continuous drain current rating for the 2SK2788VYWS-E?
The 2SK2788VYWS-E has a rated continuous drain current ID of 2 A at Ta = 25°C, measured using the specified alumina ceramic board (12.5 × 20 × 0.7 mm). Derating applies above 25°C ambient; at 75°C case temperature, the safe operating current drops to approximately 1.2 A per the Pch vs. Tc curve on page 3 of the R07DS0511EJ0300 datasheet. This rating assumes proper PCB copper pour and thermal vias.
Does the 2SK2788VYWS-E have a built-in body diode, and what is its reverse recovery performance?
Yes, the 2SK2788VYWS-E integrates a body diode with VDF = 0.9 V (typ, ID = 2 A) and reverse recovery time trr = 35 ns (typ) under IF = 2 A and diF/dt = 50 A/μs conditions. This performance enables use in DCM flyback converters and active-clamp topologies without adding an external Schottky diode, provided layout minimizes parasitic inductance in the diode loop.
Can the 2SK2788VYWS-E be driven directly by a 3.3 V microcontroller GPIO?
No - the 2SK2788VYWS-E has a VGS(off) range of 1.0–2.0 V and is specified for full enhancement at VGS ≥ 4 V. A 3.3 V GPIO cannot reliably achieve RDS(on) ≤ 0.25 Ω; operation will result in significantly higher conduction loss and thermal stress. Use with 5 V logic or add a single-stage level shifter. The 2SK2788VYWS-E datasheet explicitly states "4 V gate drive devices" in its features section.
What is the package type and lead finish of the 2SK2788VYWS-E?
The 2SK2788VYWS-E uses the UPAK (SC-62) package, also identified by Renesas as PLZZ0004CA-A. It features gull-wing leads with matte tin (Sn) plating, compliant with J-STD-020 moisture sensitivity level (MSL) 1 and RoHS Directive 2011/65/EU. The package mass is 0.050 g, and dimensions are 4.5 × 2.5 × 1.8 mm per the mechanical drawing on page 6 of R07DS0511EJ0300.
Is the 2SK2788VYWS-E suitable for automotive applications?
No - the 2SK2788VYWS-E is classified as a "Standard" quality grade device per Renesas' quality policy (page 6, Note 7), intended for computers, office equipment, industrial robots, and home appliances. It is not qualified to AEC-Q101, lacks automotive-specific reliability testing, and is not recommended for safety-critical or engine-bay environments. For automotive use, consider Renesas' RAJ series or equivalent AEC-Q101 MOSFETs.
2SK2788VYWS-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK2788VYWS-E FAQ
1.How can I place an order for 2SK2788VYWS-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK2788VYWS-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK2788VYWS-E reliable?
The price and inventory of 2SK2788VYWS-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2788VYWS-E is usually 5 days.
3.What payment methods are accepted for 2SK2788VYWS-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2788VYWS-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK2788VYWS-E?
2SK2788VYWS-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK2788VYWS-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK2788VYWS-E?
For technical support, including 2SK2788VYWS-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2788VYWS-E requirements.
6.How does Aetrix verify that 2SK2788VYWS-E is sourced from the original manufacturer or authorized distributors?
All 2SK2788VYWS-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2788VYWS-E meets industry standards.
7.What is the process for return or replacement of 2SK2788VYWS-E?
All 2SK2788VYWS-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2788VYWS-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK2788VYWS-E part is unused and in its original packaging.
Return procedure for 2SK2788VYWS-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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