Renesas 2SK2857-T1-AZ
- Part No.:
- 2SK2857-T1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-243AA
- Datasheet:
-
2SK2857-T1-AZ.pdf
- Description:
- 2SK2857-T1-AZ - N-CHANNEL MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:14,621
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SK2857-T1-AZ from Renesas Electronics is an N-channel enhancement-mode MOSFET designed for high-speed switching in low-voltage DC-DC converters and actuator drivers. It features RDS(on) ≤ 220 mΩ at VGS = 4 V, 1.5 A; td(off) = 52 ns; VDSS = 60 V; and operates up to Tch = 150 °C in a TO-236AB (SC-59) package.
For engineers reviewing the 2SK2857-T1-AZ datasheet, 2SK2857-T1-AZ pinout, 2SK2857-T1-AZ application, or 2SK2857-T1-AZ equivalent, key selection criteria include gate drive compatibility with 5 V logic, pulsed drain current capability of ±16 A, and thermal performance on ceramic substrates - critical for compact power stage designs.
Technical Context
This device uses a planar vertical DMOS structure optimized for fast switching and low conduction loss. Its gate threshold voltage (VGS(off) = 1.0–2.0 V) enables reliable turn-on with standard 5 V microcontroller outputs, while its low Ciss (265 pF) and QG (10.6 nC) support efficient high-frequency operation up to several hundred kHz.
The integrated source-drain diode exhibits trr = 49 ns and Qrr = 26.6 nC under specified conditions, making it suitable for synchronous rectification and freewheeling paths where reverse recovery behavior impacts efficiency and EMI. The device is rated for continuous ID(DC) = ±4 A with derating above 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 24 V and 48 V bus applications without derating. |
| RDS(on)1 | 220 mΩ max @ VGS = 4 V, ID = 1.5 A - Enables direct 5 V MCU gate drive with low conduction loss in low-power switches. |
| td(off) | 52 ns - Supports switching frequencies >200 kHz in hard-switched topologies with minimal dead-time overhead. |
| QG | 10.6 nC - Low gate charge reduces driver power loss and simplifies gate driver selection for discrete logic-level drive. |
| Tch max | 150 °C - Allows operation in thermally constrained enclosures when mounted on 16 cm² ceramic board. |
| ID(pulse) | ±16 A @ PW ≤ 10 µs - Supports peak load handling in motor start-up or surge-limited power supplies. |
| Ciss | 265 pF - Predictable input capacitance aids stability analysis in gate-drive loop design. |
Pinout & Package
2SK2857-T1-AZ is housed in a TO-236AB (SC-59) surface-mount plastic package with gull-wing leads, measuring 4.5 mm × 2.5 mm × 1.6 mm (L × W × H), optimized for automated assembly and thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path and internal diode cathode | Primary current return node; connects to ground or low-side reference; forms body diode anode for freewheeling. |
| 2 (Drain) | High-side power output terminal | Carries switched load current; requires adequate copper area for heat dissipation and low-inductance routing. |
| 3 (Gate) | Control input for channel modulation | High-impedance MOS control node; sensitive to ESD; requires series resistor (e.g., 10 Ω) to damp ringing and limit peak current. |
Key Features
| Feature | Design Value |
|---|---|
| 5 V logic-compatible gate drive | Guaranteed turn-on with standard 5 V microcontroller GPIO, eliminating level-shifting circuitry in low-voltage systems. |
| Low RDS(on) at 4 V VGS | Reduces conduction losses by >30% vs. typical 10 V-rated MOSFETs when driven from 5 V rails, improving efficiency in battery-powered devices. |
| Fast switching with low QG | Enables clean edge transitions and reduced switching loss in PWM-driven actuators and DC-DC controllers operating up to 500 kHz. |
| Integrated ESD protection diode | Internal gate-source Zener (±20 V rating) provides basic ESD immunity during handling and board assembly - external TVS still recommended in noisy environments. |
| Source-drain diode with controlled trr | 49 ns reverse recovery time supports use as freewheeling diode in non-synchronous buck converters without excessive voltage overshoot. |
Applications
| DC-DC Converter Switch | Small Motor Driver |
|---|---|
Use Scenario: Step-down conversion in portable medical monitors powered from 24 V battery packs. IC Role / Device Role / Timing Role: High-side synchronous switch in 300 kHz buck regulator controlling display backlight and sensor bias rails. Use Value: Low RDS(on) at 4 V ensures <150 mW conduction loss at 1.5 A, extending battery life; fast td(off) minimizes cross-conduction risk with complementary low-side FET. |
Use Scenario: Bidirectional drive for 12 V brushed DC motors in industrial HVAC damper actuators. IC Role / Device Role / Timing Role: One quadrant of H-bridge output stage, switching at ≤20 kHz with PWM duty-cycle control. Use Value: 16 A pulse rating handles motor stall currents; 60 V VDSS accommodates 12 V supply with inductive kick margin; TO-236AB footprint fits tight mechanical envelopes. |
| Solenoid Control | LED Current Switch |
Use Scenario: On/off control of 24 V fuel injector solenoids in test bench engine management units. IC Role / Device Role / Timing Role: Low-side switch activated by 5 V FPGA I/O with precise timing resolution for injection duration. Use Value: 52 ns td(off) enables sub-microsecond turn-off precision; low QG allows direct FPGA drive without buffer amplification. |
Use Scenario: Constant-current dimming of high-brightness white LEDs in architectural lighting modules. IC Role / Device Role / Timing Role: PWM-controlled current sink in linear+PWM hybrid LED driver topology. Use Value: RDS(on) stability over temperature ensures consistent current regulation; 150 °C channel rating supports sealed fixture operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RTR020N05 | RDS(on) = 180 mΩ @ VGS = 4.5 V; smaller SOT-23 package; lower QG (6.5 nC); no integrated gate protection diode. | Better suited for space-constrained, ultra-low-power IoT nodes; lacks built-in ESD protection requiring external clamping. | Select when PCB area is critical and gate drive is clean; verify external ESD protection if used in factory automation environments. |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 125 mΩ @ VGS = 4.5 V; PowerTrench® process; higher ID(pulse) = 22 A; SO-8FL package with exposed drain pad. | Higher thermal performance and current capability; requires thermal via layout; not drop-in compatible due to different footprint and pinout. | Choose for higher-power 24 V motor drives where thermal headroom and peak current margin outweigh layout redesign effort. |
Compared with RTR020N05 and NTMFS4C09NT1G, the 2SK2857-T1-AZ offers balanced trade-offs: moderate RDS(on), proven reliability in actuator interfaces, integrated gate protection, and industry-standard SC-59 packaging - making it ideal for cost-sensitive, medium-power industrial controls where layout reuse and robustness are prioritized.
Availability
2SK2857-T1-AZ is available at Aetrix Electronics and suitable for DC-DC converter switches, small motor drivers, solenoid control circuits, and LED current switching applications requiring stable component supply and long-term industrial availability.
Supply support for 2SK2857-T1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT markets.
The 2SK2857-T1-AZ belongs to Renesas' legacy discrete power MOSFET family, engineered specifically for high-reliability, low-voltage switching in industrial actuators and power management subsystems where 5 V logic compatibility and thermal resilience are essential.
FAQ
What is the maximum continuous drain current for the 2SK2857-T1-AZ at 75 °C ambient?
The 2SK2857-T1-AZ has a continuous drain current rating of ±4 A at TA = 25 °C, derated linearly to approximately ±2.7 A at TA = 75 °C when mounted on a 16 cm² ceramic board per datasheet Figure 1. This derating ensures safe channel temperature remains below 150 °C under steady-state operation.
Can the 2SK2857-T1-AZ be used with 3.3 V logic-level gate drive?
No - the 2SK2857-T1-AZ is not guaranteed to fully enhance at 3.3 V. Its gate threshold voltage range is 1.0–2.0 V, but RDS(on) is only specified at VGS = 4 V and 10 V. At 3.3 V, conduction loss increases significantly and may exceed thermal limits; 5 V drive is required for specified performance.
Does the 2SK2857-T1-AZ have a built-in body diode, and what are its characteristics?
Yes - the 2SK2857-T1-AZ includes an intrinsic source-drain body diode. Its forward voltage is 0.86 V at IF = 4 A and VGS = 0 V, with reverse recovery time trr = 49 ns and Qrr = 26.6 nC under specified test conditions. This diode supports freewheeling in inductive loads but is not optimized for high-frequency synchronous rectification.
What is the recommended PCB layout for thermal management of the 2SK2857-T1-AZ?
For optimal thermal performance, mount the 2SK2857-T1-AZ on a 16 cm² ceramic board (0.7 mm thick) as defined in the datasheet's power dissipation note. Use minimum 1.5 mm² copper pour connected to the drain pad via ≥4 thermal vias (0.3 mm diameter) to inner ground/power planes. Keep gate traces short and shielded from noise sources.
Is the 2SK2857-T1-AZ RoHS compliant and lead-free?
Yes - the 2SK2857-T1-AZ is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and EU Directive 2011/65/EU. The "-AZ" suffix denotes lead-free plating per Renesas' standard product marking convention, confirmed in official Renesas packaging documentation.
2SK2857-T1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 150mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.6 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 265 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-62
2SK2857-T1-AZ FAQ
1.How can I place an order for 2SK2857-T1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK2857-T1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK2857-T1-AZ reliable?
The price and inventory of 2SK2857-T1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2857-T1-AZ is usually 5 days.
3.What payment methods are accepted for 2SK2857-T1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2857-T1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK2857-T1-AZ?
2SK2857-T1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK2857-T1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK2857-T1-AZ?
For technical support, including 2SK2857-T1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2857-T1-AZ requirements.
6.How does Aetrix verify that 2SK2857-T1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK2857-T1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2857-T1-AZ meets industry standards.
7.What is the process for return or replacement of 2SK2857-T1-AZ?
All 2SK2857-T1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2857-T1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK2857-T1-AZ part is unused and in its original packaging.
Return procedure for 2SK2857-T1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SK2857-T1-AZ Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

