Renesas 2SK2869-91L

Overview

2SK2869-91L from Renesas is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drivers. It features 60 V V_DSS, 20 A continuous drain current, 0.033 Ω typical R_DS(on) at V_GS = 10 V, and 4 V gate drive compatibility with 5 V logic systems.

For engineers reviewing the 2SK2869-91L datasheet, 2SK2869-91L pinout, 2SK2869-91L application, or 2SK2869-91L equivalent, key selection criteria include avalanche energy rating (34 mJ), fast switching times (t_d(on) = 10 ns, t_f = 120 ns), body diode reverse recovery time (40 ns), and DPAK(L)-(2) package thermal performance.

Technical Context

This MOSFET uses planar V-groove silicon technology optimized for low conduction loss and controlled switching transients. Its gate threshold voltage range (1.5–2.5 V) enables reliable turn-on with 4 V drive, while the 740 pF input capacitance and 140 pF reverse transfer capacitance support stable high-frequency operation up to several hundred kHz.

The device integrates an intrinsic body diode rated for 20 A reverse current and 40 ns recovery time under 50 A/µs di/dt conditions. Thermal design is supported by a channel-to-case thermal resistance of 4.17°C/W and maximum channel temperature of 150°C, enabling use in thermally constrained industrial power stages.

Key Specifications

Pinout & Package

2SK2869-91L is housed in the Renesas PRSS0004ZD-B package, branded DPAK(L)-(2), a surface-mount variant of the TO-252 outline with enhanced thermal pad and 0.42 g mass. The package supports PCB copper area thermal relief and meets JEITA SC-63 mechanical standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP20N60P and IRFZ44NPBF, the 2SK2869-91L delivers optimal balance of 60 V rating, low 4 V drive R_DS(on), certified avalanche capability, and DPAK thermal performance-making it uniquely suited for compact, high-reliability 48 V industrial power stages.

Availability

2SK2869-91L is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, LED constant-current drivers, and power factor correction circuits requiring stable component supply across extended production lifecycles.

Supply support for 2SK2869-91L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The 2SK2869-91L belongs to Renesas' legacy high-speed power MOSFET product line, engineered specifically for industrial-grade switching applications demanding low gate drive voltage, robust avalanche performance, and thermally efficient DPAK packaging.

FAQ

What is the gate threshold voltage range for the 2SK2869-91L?

The 2SK2869-91L has a gate-to-source cutoff voltage (V_GS(off)) range of 1.5 V to 2.5 V at I_D = 1 mA and V_DS = 10 V. This ensures reliable turn-on with standard 3.3 V or 5 V logic outputs. The 2SK2869-91L's low threshold supports direct interface with microcontroller GPIOs without external level shifters, reducing bill-of-materials cost in space-constrained designs.

Does the 2SK2869-91L have avalanche capability, and what is its rating?

Yes, the 2SK2869-91L is rated for repetitive avalanche energy of 34 mJ at T_ch = 25°C with R_g ≥ 50 Ω. This specification is validated per the avalanche test circuit in the datasheet and enables safe operation during inductive load switching events. The 2SK2869-91L's avalanche ruggedness makes it suitable for relay drivers, solenoid controls, and other applications where unclamped inductive kickback may occur.

What is the R_DS(on) of the 2SK2869-91L at 4 V gate drive?

The 2SK2869-91L exhibits a static drain-to-source on-state resistance of 0.055 Ω typical (0.07 Ω max) at I_D = 10 A and V_GS = 4 V. This low 4 V drive R_DS(on) allows direct compatibility with 5 V logic systems and simplifies gate driver design. The 2SK2869-91L's performance at 4 V ensures efficient operation even when gate drive voltage is limited by system constraints.

Which package does the 2SK2869-91L use, and how does it differ from the 2SK2869(S)?

The 2SK2869-91L uses the PRSS0004ZD-B package, designated DPAK(L)-(2), with 0.42 g mass and larger thermal pad dimensions than the DPAK(S) variant. Unlike the 2SK2869(S) (PRSS0004ZD-C), the 2SK2869-91L's DPAK(L)-(2) offers superior thermal resistance (4.17°C/W) and is optimized for higher-power industrial applications. The 2SK2869-91L's package supports greater continuous current handling under identical PCB layout conditions.

What is the body diode reverse recovery time (t_rr) of the 2SK2869-91L?

The body diode reverse recovery time (t_rr) of the 2SK2869-91L is 40 ns, measured at I_F = 20 A, dI_F/dt = 50 A/µs, and V_GS = 0. This fast recovery characteristic minimizes switching losses and prevents shoot-through in half-bridge and synchronous rectifier configurations. The 2SK2869-91L's t_rr value is confirmed in the Electrical Characteristics table on page 2 of the official Renesas datasheet Rev.2.00.