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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK2932-E

Name: 2SK2932-E
Brand: Renesas
SKU: 2SK2932-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK2932-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK2932-E.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

2SK2932-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters, motor drivers, and SMPS primary-side switches. It features 60 V V_DSS, 10 A continuous drain current, 0.055 Ω R_DS(on) at V_GS = 10 V, 4 V gate threshold compatibility with 5 V logic, and TO-220CFM package for robust thermal performance.

For engineers reviewing the 2SK2932-E datasheet, 2SK2932-E pinout, 2SK2932-E application, or 2SK2932-E equivalent, key selection criteria include avalanche energy rating (8.5 mJ), body-diode reverse recovery time (50 ns), gate charge characteristics, and safe operating area limits under pulsed and DC conditions.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and fast switching. Its 0.090 Ω R_DS(on) at 4 V gate drive enables direct interface with standard 5 V microcontrollers without level-shifting. The integrated body diode supports synchronous rectification and freewheeling in inductive loads.

Thermal design relies on case-to-ambient conduction via the TO-220CFM metal tab (θ_JA = 6.25°C/W). Avalanche ruggedness is validated per JEDEC JESD24-11 using R_g ≥ 50 Ω, with I_AP = 10 A and E_AR = 8.5 mJ at T_ch = 25°C - critical for unclamped inductive switching reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in buck/boost topologies
R_DS(on) @ V_GS=10 V	0.055 Ω typ. - Enables <1 W conduction loss at 5 A, reducing heatsink requirements
R_DS(on) @ V_GS=4 V	0.090 Ω typ. - Confirms full enhancement with 5 V logic-level drive, eliminating gate driver IC need
t_r/t_f	55 ns / 70 ns - Supports >1 MHz switching in resonant converters while limiting EMI generation
C_iss/C_oss	350 pF / 190 pF - Low input/output capacitance reduces gate drive power and improves hard-switching efficiency
trr	50 ns - Fast body-diode recovery minimizes cross-conduction loss in half-bridge configurations
E_AR	8.5 mJ - Quantifies single-pulse avalanche energy handling; essential for relay/snubberless inductive load control

Pinout & Package

2SK2932-E uses the TO-220CFM (RENESAS code PRSS0003AE-A) package: insulated tab, vertical mounting, 1.9 g mass, and 13.6 mm height. Thermal resistance θ_JC = 1.2°C/W enables 20 W channel dissipation at T_C = 25°C.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 0–20 V gate-source bias; 10 µA max leakage ensures stable turn-on with high-impedance drivers
2 (Drain)	High-side power terminal	Connected to positive rail or inductive load; rated for 60 V and repetitive 40 A pulsed current
3 (Source)	Reference and return path	Serves as common node for gate drive reference and current sensing; bonded directly to metal tab for low-inductance layout

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4 V - eliminates external level shifters in 5 V MCU-controlled power stages
Avalanche-rated operation	Specified 8.5 mJ single-pulse energy - enables reliable unclamped inductive switching without external snubbers
Fast body-diode recovery	50 ns trr - reduces shoot-through risk and conduction loss in synchronous rectifiers and H-bridges
Low gate charge	Q_g ≈ 20 nC (inferred from C_iss/C_oss and switching times) - lowers gate driver power and improves efficiency at high frequency
TO-220CFM insulation	Electrically isolated metal tab - allows direct heatsink mounting without insulating pads, simplifying thermal design

Applications

DC-DC Converter Primary Switch	Brushed DC Motor Driver
Use Scenario: High-efficiency 24–48 V input buck converter delivering 5–12 V at up to 8 A for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; operates at 250–500 kHz with hard switching. Use Value: 0.055 Ω R_DS(on) limits conduction loss to <2.2 W at 8 A, enabling compact heatsink-free design in sealed enclosures.	Use Scenario: Bidirectional 24 V brushed motor control in automated warehouse conveyors with regenerative braking. IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration; body diode conducts reverse current during PWM off-time. Use Value: 50 ns trr prevents excessive heating during 20 kHz PWM commutation, extending MOSFET lifetime under frequent direction reversal.
AC-DC SMPS Switch	Inductive Load Driver
Use Scenario: 60 W offline flyback adapter powering PoE-powered devices with universal AC input (90–264 VAC). IC Role / Device Role / Timing Role: Primary-side switching transistor clamped by RCD snubber; subjected to repetitive avalanche stress during line transients. Use Value: 8.5 mJ avalanche energy rating absorbs line-induced spikes without failure, improving surge immunity per IEC 61000-4-5 Level 3.	Use Scenario: Solenoid valve actuation in HVAC zone dampers requiring 100 ms on/off cycles with 2 A steady-state current. IC Role / Device Role / Timing Role: Low-side switch driving inductive load; body diode provides freewheeling path during turn-off. Use Value: 0.090 Ω R_DS(on) at 4 V gate drive ensures full saturation from 5 V MCU GPIO, eliminating need for discrete gate driver ICs.

DC-DC Converter Primary Switch

Brushed DC Motor Driver

Use Scenario: High-efficiency 24–48 V input buck converter delivering 5–12 V at up to 8 A for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; operates at 250–500 kHz with hard switching.

Use Value: 0.055 Ω R_DS(on) limits conduction loss to <2.2 W at 8 A, enabling compact heatsink-free design in sealed enclosures.

Use Scenario: Bidirectional 24 V brushed motor control in automated warehouse conveyors with regenerative braking.

IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration; body diode conducts reverse current during PWM off-time.

Use Value: 50 ns trr prevents excessive heating during 20 kHz PWM commutation, extending MOSFET lifetime under frequent direction reversal.

AC-DC SMPS Switch

Inductive Load Driver

Use Scenario: 60 W offline flyback adapter powering PoE-powered devices with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side switching transistor clamped by RCD snubber; subjected to repetitive avalanche stress during line transients.

Use Value: 8.5 mJ avalanche energy rating absorbs line-induced spikes without failure, improving surge immunity per IEC 61000-4-5 Level 3.

Use Scenario: Solenoid valve actuation in HVAC zone dampers requiring 100 ms on/off cycles with 2 A steady-state current.

IC Role / Device Role / Timing Role: Low-side switch driving inductive load; body diode provides freewheeling path during turn-off.

Use Value: 0.090 Ω R_DS(on) at 4 V gate drive ensures full saturation from 5 V MCU GPIO, eliminating need for discrete gate driver ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	60 V V_DSS, 60 A I_D, 0.014 Ω R_DS(on), TO-220FP package (non-isolated tab)	Higher current rating but requires insulating hardware; lacks specified avalanche energy rating	Prefer when higher peak current headroom is needed and isolation is managed externally
IRFZ44NPBF	55 V V_DSS, 49 A I_D, 0.028 Ω R_DS(on), TO-220AB package (non-isolated tab)	Lower voltage rating; no published avalanche energy spec; slower t_r/t_f (75/100 ns)	Acceptable for lower-voltage (<50 V) motor drives where avalanche stress is absent

Compared with STP60NF06 and IRFZ44NPBF, the 2SK2932-E trades absolute current capacity for guaranteed avalanche ruggedness, logic-level drive compatibility, and electrically isolated packaging - making it optimal for space-constrained, safety-critical 48 V industrial power stages where snubberless inductive switching is required.

Availability

2SK2932-E is available at Aetrix Electronics and suitable for industrial motor control, DC-DC conversion, AC-DC SMPS, and solenoid actuation requiring stable component supply across multi-year production cycles.

Supply support for 2SK2932-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.

The 2SK2932-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for ruggedized industrial switching applications demanding reliable avalanche operation and logic-level gate drive without external support circuitry.

FAQ

What is the maximum continuous drain current rating for the 2SK2932-E?

The 2SK2932-E has a continuous drain current (I_D) rating of 10 A at T_C = 25°C. This value derates linearly above 25°C case temperature, reaching zero at 150°C channel temperature. For sustained 10 A operation, adequate heatsinking maintaining T_C ≤ 25°C is required - typically achieved with a 15 cm² aluminum heatsink in still air.

Does the 2SK2932-E support 5 V logic-level gate drive?

Yes, the 2SK2932-E is explicitly characterized for 4 V gate drive, with R_DS(on) = 0.090 Ω typ. at V_GS = 4 V and I_D = 5 A. This confirms full enhancement with standard 5 V TTL/CMOS outputs, eliminating the need for gate driver ICs or level shifters in microcontroller-based power stages.

What is the avalanche energy rating of the 2SK2932-E and how is it tested?

The 2SK2932-E is rated for 8.5 mJ single-pulse avalanche energy (E_AR) at T_ch = 25°C with R_g ≥ 50 Ω. Testing follows JEDEC JESD24-11 using an inductive test circuit with L = 100 µH, V_DD = 25 V, and I_AP = 10 A. This rating validates safe operation during unclamped inductive turn-off events common in relay and solenoid drivers.

What package type does the 2SK2932-E use and is the tab electrically isolated?

The 2SK2932-E uses the TO-220CFM package (RENESAS code PRSS0003AE-A), which features an electrically insulated metal tab. This allows direct mounting to a common heatsink without requiring insulating pads or washers - simplifying thermal design and reducing assembly cost in high-volume industrial power supplies.

How does the body-diode performance of the 2SK2932-E compare to standard power MOSFETs?

The 2SK2932-E body diode has a forward voltage (V_DF) of 0.9 V at I_F = 10 A and reverse recovery time (t_rr) of 50 ns - significantly faster than typical discrete diodes and competitive with dedicated fast-recovery MOSFETs. This enables efficient freewheeling in H-bridges and reduces switching losses in synchronous rectifier topologies.

2SK2932-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

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Supplier Device Package:: -

2SK2932-E FAQ

1.How can I place an order for 2SK2932-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK2932-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK2932-E reliable?

The price and inventory of 2SK2932-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2932-E is usually 5 days.

3.What payment methods are accepted for 2SK2932-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2932-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK2932-E?

2SK2932-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK2932-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK2932-E?

For technical support, including 2SK2932-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2932-E requirements.

6.How does Aetrix verify that 2SK2932-E is sourced from the original manufacturer or authorized distributors?

All 2SK2932-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2932-E meets industry standards.

7.What is the process for return or replacement of 2SK2932-E?

All 2SK2932-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2932-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK2932-E part is unused and in its original packaging.

Return procedure for 2SK2932-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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