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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK2935-92-E

Name: 2SK2935-92-E
Brand: Renesas
SKU: 2SK2935-92-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK2935-92-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK2935-92-E.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SK2935-92-E from Renesas is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters, motor drives, and SMPS primary-side switches. It delivers R_DS(on) = 0.020 Ω (typ.) at V_GS = 10 V, supports 60 V V_DSS, 35 A continuous drain current, and operates with 4 V gate drive compatibility.

For engineers reviewing the 2SK2935-92-E datasheet, 2SK2935-92-E pinout, 2SK2935-92-E application, or 2SK2935-92-E equivalent, key selection criteria include avalanche energy rating (105 mJ), fast switching times (t_d(on) = 15 ns, t_f = 195 ns), body-diode reverse recovery (t_rr = 40 ns), and TO-220CFM thermal performance (θ_ch-c = 4.17°C/W).

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and controlled switching transients. Its gate threshold voltage (V_GS(off) = 1.5–2.5 V) enables reliable turn-on with standard 5 V logic, while the 0.032 Ω R_DS(on) at V_GS = 4 V ensures efficient operation in 3.3 V–5 V control systems.

The device integrates a co-packaged body diode with V_DF = 0.95 V (I_F = 35 A) and t_rr = 40 ns under di/dt = 50 A/µs - critical for synchronous rectification and freewheeling in hard-switched topologies. Avalanche ruggedness (I_AP = 35 A, E_AR = 105 mJ) supports unclamped inductive switching in relay drivers and solenoid controls.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage in off-state; defines use in ≤48 V bus systems with safety margin.
R_DS(on) @ V_GS = 10 V	0.020 Ω typ. - Enables <1 W conduction loss at 35 A, reducing heatsink requirements.
R_DS(on) @ V_GS = 4 V	0.032 Ω typ. - Ensures usable on-resistance with 3.3 V or 5 V microcontroller GPIO drive.
t_d(on)/t_f	15 ns / 195 ns - Supports >500 kHz switching in resonant and hard-switched converters.
E_AR	105 mJ - Withstands single-pulse inductive energy without failure; validated at T_ch = 25°C, R_g ≥ 50 Ω.
C_iss/C_oss	1100 pF / 540 pF - Low input/output capacitance minimizes gate drive power and improves ZVS capability.
V_GS(off)	1.5–2.5 V - Tight threshold range ensures consistent turn-on across temperature and unit-to-unit variation.

Pinout & Package

Package: TO-220CFM (RENESAS code PRSS0003AE-A), insulated tab, vertical mounting, 1.9 g mass, case temperature rated to 150°C.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal; requires <±10 µA leakage; driven by logic-level or dedicated gate driver.
2 (Drain)	High-side current path	Connected to positive rail or inductive load; carries full switched current and withstands 60 V transient spikes.
3 (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; bonded directly to package tab for thermal conduction.

Key Features

Feature	Design Value
Low R_DS(on) at 4 V drive	0.032 Ω typ. - Eliminates need for level-shifting gate drivers in 3.3 V/5 V control architectures.
Fast body diode recovery	t_rr = 40 ns - Reduces switching losses and voltage overshoot during commutation in buck and half-bridge topologies.
Avalanche-rated construction	105 mJ single-pulse energy - Permits safe operation in unclamped inductive loads without external snubbers.
Thermal resistance (ch-to-case)	4.17°C/W - Enables 30 W channel dissipation at T_c = 25°C; supports compact heatsinking in space-constrained designs.

Applications

DC-DC Converter Primary Switch	Brushed DC Motor Driver
Use Scenario: High-efficiency 24–48 V input buck converter delivering up to 15 A output. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty-cycle modulated at 200–500 kHz. Use Value: 0.020 Ω R_DS(on) limits conduction loss to <11 W at 35 A, while 195 ns fall time reduces transition loss in high-frequency operation.	Use Scenario: H-bridge driver for 36 V, 20 A brushed motors in industrial actuators. IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional current and regenerative braking. Use Value: Co-packaged body diode with 40 ns t_rr enables efficient freewheeling during PWM off-time, minimizing voltage spikes and EMI.
SMPS Secondary-Side Rectifier	Solenoid / Relay Driver
Use Scenario: Synchronous rectification in isolated flyback or forward converter secondary side. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward drop and improve efficiency at 12–24 V output. Use Value: 0.95 V V_DF and low Q_rr minimize conduction loss and reverse recovery charge, boosting efficiency by 2–3% over discrete diodes.	Use Scenario: Driving 24 V, 1.5 A solenoids in HVAC valve control or industrial pneumatic systems. IC Role / Device Role / Timing Role: Unclamped inductive load switch with integrated avalanche energy absorption. Use Value: 105 mJ E_AR safely clamps turn-off voltage spikes without external TVS, simplifying BOM and PCB layout.

DC-DC Converter Primary Switch

Brushed DC Motor Driver

Use Scenario: High-efficiency 24–48 V input buck converter delivering up to 15 A output.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; duty-cycle modulated at 200–500 kHz.

Use Value: 0.020 Ω R_DS(on) limits conduction loss to <11 W at 35 A, while 195 ns fall time reduces transition loss in high-frequency operation.

Use Scenario: H-bridge driver for 36 V, 20 A brushed motors in industrial actuators.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional current and regenerative braking.

Use Value: Co-packaged body diode with 40 ns t_rr enables efficient freewheeling during PWM off-time, minimizing voltage spikes and EMI.

SMPS Secondary-Side Rectifier

Solenoid / Relay Driver

Use Scenario: Synchronous rectification in isolated flyback or forward converter secondary side.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward drop and improve efficiency at 12–24 V output.

Use Value: 0.95 V V_DF and low Q_rr minimize conduction loss and reverse recovery charge, boosting efficiency by 2–3% over discrete diodes.

Use Scenario: Driving 24 V, 1.5 A solenoids in HVAC valve control or industrial pneumatic systems.

IC Role / Device Role / Timing Role: Unclamped inductive load switch with integrated avalanche energy absorption.

Use Value: 105 mJ E_AR safely clamps turn-off voltage spikes without external TVS, simplifying BOM and PCB layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP36NF06L	60 V V_DSS, 0.033 Ω R_DS(on) @ 10 V, TO-220FP package (non-insulated tab)	Lacks specified avalanche energy rating; higher C_iss (1500 pF)	Prefer when cost sensitivity outweighs avalanche robustness and gate drive efficiency at 4 V.
IRFZ44NPBF	55 V V_DSS, 0.028 Ω R_DS(on) @ 10 V, TO-220AB package (non-insulated tab)	Lower voltage rating; no published t_rr or E_AR data; slower switching (t_f = 60 ns)	Acceptable only in ≤36 V systems where avalanche stress and fast body diode recovery are non-critical.

Compared with STP36NF06L and IRFZ44NPBF, the 2SK2935-92-E provides superior 4 V drive capability, verified avalanche ruggedness, and faster body diode recovery - making it preferred for high-reliability 48 V industrial switching where gate drive simplicity and inductive fault tolerance are essential.

Availability

2SK2935-92-E is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and solenoid controllers requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing from original manufacturer channels.

Supply support for 2SK2935-92-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and infrastructure markets.

The 2SK2935-92-E belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for ruggedized industrial switching applications demanding high-current handling, fast transient response, and repeatable avalanche performance.

FAQ

What is the maximum continuous drain current rating for the 2SK2935-92-E?

The 2SK2935-92-E is rated for 35 A continuous drain current (I_D) at T_c = 25°C. This rating assumes proper heatsinking and derates linearly above 25°C case temperature per the P_ch vs. T_c curve - e.g., ~20 A at T_c = 75°C. Pulse current reaches 140 A (≤10 µs, 1% duty cycle), supporting short-term overload conditions in motor start-up or surge protection circuits.

Does the 2SK2935-92-E support 3.3 V logic-level gate drive?

The 2SK2935-92-E does not guarantee full enhancement at 3.3 V due to its V_GS(off) range of 1.5–2.5 V and R_DS(on) = 0.032 Ω typ. at V_GS = 4 V. While partial turn-on occurs at 3.3 V, conduction losses rise significantly. For reliable operation, use 4 V minimum gate drive - achievable via buffered 3.3 V outputs or dedicated gate drivers like TC4427.

What is the thermal resistance from channel to case for the 2SK2935-92-E?

The 2SK2935-92-E has a channel-to-case thermal resistance (θ_ch-c) of 4.17°C/W, measured under DC conditions at T_c = 25°C. This value is derived from the 30 W channel dissipation rating and enables accurate junction temperature estimation using T_j = T_c + (P_d × 4.17). Transient thermal impedance curves are provided for pulsed operation.

Is the 2SK2935-92-E pin-compatible with other TO-220 N-channel MOSFETs?

The 2SK2935-92-E uses the TO-220CFM package with standard 1–2–3 pinout (G–D–S), matching mechanical footprint and terminal assignment of industry-standard TO-220AB/TO-220FP devices. However, electrical characteristics - especially R_DS(on), Q_g, and avalanche rating - differ significantly; direct substitution requires validation of switching loss, thermal margin, and fault tolerance in the target application.

What is the body diode reverse recovery time (t_rr) specification for the 2SK2935-92-E?

The 2SK2935-92-E specifies a body diode reverse recovery time (t_rr) of 40 ns, measured at I_F = 35 A, di/dt = 50 A/µs, and V_GS = 0. This fast recovery supports high-frequency synchronous rectification and reduces voltage overshoot during commutation - a key differentiator versus general-purpose MOSFETs lacking characterized t_rr.

2SK2935-92-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK2935-92-E FAQ

1.How can I place an order for 2SK2935-92-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK2935-92-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK2935-92-E reliable?

The price and inventory of 2SK2935-92-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK2935-92-E is usually 5 days.

3.What payment methods are accepted for 2SK2935-92-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK2935-92-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK2935-92-E?

2SK2935-92-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK2935-92-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK2935-92-E?

For technical support, including 2SK2935-92-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK2935-92-E requirements.

6.How does Aetrix verify that 2SK2935-92-E is sourced from the original manufacturer or authorized distributors?

All 2SK2935-92-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK2935-92-E meets industry standards.

7.What is the process for return or replacement of 2SK2935-92-E?

All 2SK2935-92-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK2935-92-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK2935-92-E part is unused and in its original packaging.

Return procedure for 2SK2935-92-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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