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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3055(1)-AZ

Name: 2SK3055(1)-AZ
Brand: Renesas
SKU: 2SK3055(1)-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3055(1)-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3055(1)-AZ.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

2SK3055(1)-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current industrial switching applications, featuring R_DS(on)1 = 34 mΩ max at V_GS = 10 V and I_D = 15 A, 60 V V_DSS, and isolated TO-220 package with built-in gate protection diode - used in DC motor drives and SMPS primary-side switches.

For engineers reviewing the 2SK3055(1)-AZ datasheet, 2SK3055(1)-AZ pinout, 2SK3055(1)-AZ application, or 2SK3055(1)-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 22.5 mJ), low gate charge (Q_G = 25 nC), body diode reverse recovery time (t_rr = 45 ns), and thermal resistance (R_th(ch-C) = 5.0 °C/W).

Technical Context

This device operates as a voltage-controlled unidirectional switch with enhancement-mode N-channel structure. Its gate threshold voltage range (V_GS(off) = 1.0–2.0 V) enables reliable turn-on with standard logic-level drivers, while the isolated TO-220 package electrically separates drain metal tab from mounting surface - critical for high-side configurations.

The integrated gate protection diode guards against ESD but does not replace external transient suppression. Avalanche capability is characterized under defined test conditions (V_DD = 30 V, R_G = 25 Ω, T_ch = 25 °C), supporting single-pulse inductive load handling up to I_AS = 15 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - maximum blocking voltage before avalanche breakdown; sets upper limit for DC bus or flyback clamp voltage in SMPS designs.
R_DS(on)1	34 mΩ max at V_GS = 10 V, I_D = 15 A - determines conduction loss and junction temperature rise under continuous load.
Q_G	25 nC - total gate charge required to fully switch; directly impacts driver power and switching speed in hard-switched topologies.
t_rr	45 ns - body diode reverse recovery time at I_F = 30 A, di/dt = 100 A/µs; affects shoot-through risk and snubber design in synchronous rectification or half-bridge freewheeling.
E_AS	22.5 mJ - single-pulse avalanche energy rating; enables robustness against inductive switching transients without external clamping in relay drivers or solenoid controls.
C_iss	920 pF typ. at V_DS = 10 V - input capacitance influencing gate drive loop stability and Miller effect during turn-off.
T_ch max	150 °C - maximum channel temperature; defines safe operating area boundary when combined with R_th(ch-C) = 5.0 °C/W.

Pinout & Package

Package: Isolated TO-220 (MP-45F), with electrically insulated drain tab - allows direct heatsinking without isolation hardware. Mounting screw hole centered at 13.5 mm min. from lead edge.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate (G)	Control terminal; requires ≤ ±20 V gate-source voltage; protected by internal Zener diode.
2 (Center)	Drain (D)	Main current-carrying terminal connected to exposed metal tab; electrically isolated from case mounting surface.
3 (Right)	Source (S)	Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations.

Key Features

Feature	Design Value
Low R_DS(on) at 4 V gate drive	R_DS(on)2 = 50 mΩ max enables partial-gate-drive operation with microcontroller GPIOs or low-voltage PWM controllers.
Built-in gate protection diode	Integrated Zener between G and S limits gate overvoltage during ESD events or inductive coupling - reduces need for external TVS in space-constrained layouts.
Isolated TO-220 package	Drain tab insulation eliminates need for insulating washers or silicone pads when mounted to shared heatsinks - simplifies thermal management in multi-device power stages.
Specified avalanche capability	Single-pulse I_AS = 15 A and E_AS = 22.5 mJ provide validated ruggedness margin for inductive load switching without derating or external snubbers.

Applications

DC Motor Drive	Switch-Mode Power Supply
Use Scenario: Controlling brushed DC motors in industrial automation systems requiring bidirectional current handling via H-bridge configuration. IC Role / Device Role / Timing Role: Low-side or high-side switching element; handles repetitive 30 A pulsed drain current with fast turn-on delay (t_d(on) = 25 ns) and controlled rise time (t_r = 300 ns). Use Value: R_DS(on) < 34 mΩ minimizes I²R losses at full load, while t_rr = 45 ns ensures clean commutation during direction reversal without cross-conduction.	Use Scenario: Primary-side switching transistor in offline flyback or forward converters operating at 50–100 kHz with 300–400 V DC input. IC Role / Device Role / Timing Role: High-voltage, high-current power switch; withstands 60 V V_DSS with margin above reflected output voltage plus leakage spikes. Use Value: Q_G = 25 nC enables efficient gate driving with low-power ICs; E_AS = 22.5 mJ absorbs transformer leakage energy without failure.
Industrial Relay Replacement	Solenoid Control Module
Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules handling 24 V DC loads up to 15 A. IC Role / Device Role / Timing Role: Load switch with galvanic isolation via package; supports hot-plug and short-circuit detection due to predictable R_DS(on) drift with temperature. Use Value: V_GS(off) = 1.0–2.0 V ensures noise immunity in electrically noisy factory environments; T_stg = –55 to +150 °C supports wide ambient operation.	Use Scenario: Driving 24 V DC solenoids in automated fluid control valves where rapid actuation and hold-current reduction are required. IC Role / Device Role / Timing Role: Pulse-width modulated switch controlling peak-to-hold current transition; leverages low C_iss (920 pF) for precise duty-cycle fidelity. Use Value: Fast fall time (t_f = 120 ns) enables sharp de-energization for precise valve timing; isolated package prevents ground-loop interference in multi-valve banks.

DC Motor Drive

Switch-Mode Power Supply

Use Scenario: Controlling brushed DC motors in industrial automation systems requiring bidirectional current handling via H-bridge configuration.

IC Role / Device Role / Timing Role: Low-side or high-side switching element; handles repetitive 30 A pulsed drain current with fast turn-on delay (t_d(on) = 25 ns) and controlled rise time (t_r = 300 ns).

Use Value: R_DS(on) < 34 mΩ minimizes I²R losses at full load, while t_rr = 45 ns ensures clean commutation during direction reversal without cross-conduction.

Use Scenario: Primary-side switching transistor in offline flyback or forward converters operating at 50–100 kHz with 300–400 V DC input.

IC Role / Device Role / Timing Role: High-voltage, high-current power switch; withstands 60 V V_DSS with margin above reflected output voltage plus leakage spikes.

Use Value: Q_G = 25 nC enables efficient gate driving with low-power ICs; E_AS = 22.5 mJ absorbs transformer leakage energy without failure.

Industrial Relay Replacement

Solenoid Control Module

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller (PLC) output modules handling 24 V DC loads up to 15 A.

IC Role / Device Role / Timing Role: Load switch with galvanic isolation via package; supports hot-plug and short-circuit detection due to predictable R_DS(on) drift with temperature.

Use Value: V_GS(off) = 1.0–2.0 V ensures noise immunity in electrically noisy factory environments; T_stg = –55 to +150 °C supports wide ambient operation.

Use Scenario: Driving 24 V DC solenoids in automated fluid control valves where rapid actuation and hold-current reduction are required.

IC Role / Device Role / Timing Role: Pulse-width modulated switch controlling peak-to-hold current transition; leverages low C_iss (920 pF) for precise duty-cycle fidelity.

Use Value: Fast fall time (t_f = 120 ns) enables sharp de-energization for precise valve timing; isolated package prevents ground-loop interference in multi-valve banks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	V_DSS = 60 V, R_DS(on) = 0.018 Ω @ 10 V, TO-220 non-isolated package	Lacks drain-source electrical isolation; requires insulating hardware for heatsink mounting	Select when cost sensitivity outweighs isolation requirement and PCB layout permits added insulation layers.
IRFZ44NPBF	V_DSS = 55 V, R_DS(on) = 0.028 Ω @ 10 V, TO-220 non-isolated, no specified avalanche rating	Lower voltage rating and unspecified E_AS limit use in 48 V systems or unclamped inductive loads	Prefer only in low-energy, low-voltage (< 40 V) switching where avalanche stress is absent and isolation is unnecessary.

Compared with STP60NF06 and IRFZ44NPBF, the 2SK3055(1)-AZ provides verified avalanche ruggedness and factory-insulated packaging - critical for industrial motor drives and PLC outputs where reliability under fault conditions and simplified thermal design are mandatory.

Availability

2SK3055(1)-AZ is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, PLC output modules, and solenoid control systems requiring stable component supply across extended production lifecycles.

Supply support for 2SK3055(1)-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3055(1)-AZ belongs to Renesas' legacy power MOSFET product line targeting industrial-grade switching applications - engineered for ruggedness, thermal stability, and repeatable avalanche performance in harsh electromagnetic environments.

FAQ

What is the maximum continuous drain current rating for the 2SK3055(1)-AZ?

The 2SK3055(1)-AZ has a maximum continuous drain current (I_D(DC)) of ±30 A at T_C = 25 °C. This rating assumes ideal heatsinking; actual usable current depends on case temperature, PCB copper area, and airflow. At elevated case temperatures, derating applies per the datasheet's PT vs. TC curve - for example, at T_C = 100 °C, the practical I_D(DC) drops to approximately 12 A. The 2SK3055(1)-AZ must be operated within its Safe Operating Area (SOA) boundaries to avoid thermal runaway.

Does the 2SK3055(1)-AZ have a built-in body diode, and what are its characteristics?

Yes, the 2SK3055(1)-AZ integrates a parasitic body diode between source and drain. Its forward voltage (V_F(S-D)) is 1.0 V typical at I_F = 30 A and V_GS = 0 V, with reverse recovery time (t_rr) of 45 ns and reverse recovery charge (Q_rr) of 60 nC under specified test conditions (di/dt = 100 A/µs). These parameters are critical when using the 2SK3055(1)-AZ in synchronous rectification or freewheeling paths where diode conduction occurs.

Can the 2SK3055(1)-AZ be driven directly by a 3.3 V microcontroller GPIO?

No - the 2SK3055(1)-AZ is not a logic-level MOSFET. Its gate threshold voltage (V_GS(off)) ranges from 1.0 to 2.0 V, but full enhancement requires V_GS ≥ 10 V to achieve R_DS(on)1 ≤ 34 mΩ. At 3.3 V, R_DS(on)2 is rated up to 50 mΩ only at I_D = 15 A, resulting in excessive conduction loss and thermal stress. A dedicated gate driver or level-shifting circuit is required to reliably operate the 2SK3055(1)-AZ in high-efficiency applications.

What does "isolated TO-220" mean for the 2SK3055(1)-AZ package?

"Isolated TO-220" means the drain-connected metal tab is electrically insulated from the mounting surface by a dielectric layer - typically ceramic or polymer - enabling direct attachment to a common heatsink without additional insulators. This differs from standard TO-220 packages where the tab is internally connected to drain and must be isolated with mica washers or silicone pads. For the 2SK3055(1)-AZ, this isolation simplifies thermal design in multi-device power stages and avoids creepage/clearance compromises in compact industrial enclosures.

Is the 2SK3055(1)-AZ suitable for automotive applications?

The 2SK3055(1)-AZ is classified as a Standard-grade Renesas product intended for industrial equipment, office machinery, and consumer appliances - not automotive or safety-critical systems. It lacks AEC-Q101 qualification, automotive temperature range validation (−40 to +125 °C), and PPAP documentation. While it may function in benign automotive subsystems, Renesas explicitly restricts its use in transportation equipment without prior written consent. For automotive-grade alternatives, consult Renesas' RAJ or RV series qualified MOSFETs.

2SK3055(1)-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3055(1)-AZ FAQ

1.How can I place an order for 2SK3055(1)-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3055(1)-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3055(1)-AZ reliable?

The price and inventory of 2SK3055(1)-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3055(1)-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3055(1)-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3055(1)-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3055(1)-AZ?

2SK3055(1)-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3055(1)-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3055(1)-AZ?

For technical support, including 2SK3055(1)-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3055(1)-AZ requirements.

6.How does Aetrix verify that 2SK3055(1)-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3055(1)-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3055(1)-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3055(1)-AZ?

All 2SK3055(1)-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3055(1)-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3055(1)-AZ part is unused and in its original packaging.

Return procedure for 2SK3055(1)-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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