Renesas 2SK3060-Z-E1-AZ

Overview

2SK3060-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers R_DS(on)1 = 13 mΩ max at V_GS = 10 V / I_D = 35 A, supports ±70 A DC drain current, and features built-in gate protection diode and 60 V V_DSS rating - enabling robust operation in 48 V bus systems with synchronous rectification or half-bridge topologies.

For engineers reviewing the 2SK3060-Z-E1-AZ datasheet, 2SK3060-Z-E1-AZ pinout, 2SK3060-Z-E1-AZ application, or 2SK3060-Z-E1-AZ equivalent, key selection criteria include its TO-220SMD package thermal performance (R_th(ch-C) = 1.79 °C/W), low Q_G = 50 nC for fast switching, avalanche-rated capability (E_AS = 122.5 mJ), and dual-threshold on-resistance behavior across V_GS = 4.0 V and 10 V drive levels.

Technical Context

This discrete power MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and controlled switching transients. Its gate charge profile (Q_GS = 7.5 nC, Q_GD = 18 nC) enables precise Miller plateau control in hard-switched converters, while the body diode exhibits t_rr = 55 ns and Q_rr = 75 nC under 100 A/µs di/dt - critical for minimizing commutation losses in freewheeling paths.

The device operates within a channel temperature range of –55 °C to +150 °C and is rated for single-pulse avalanche energy up to 122.5 mJ at T_ch = 25 °C. Its safe operating area (SOA) is defined up to 100 ms pulse width at V_DS = 10 V and I_D = 70 A, with derating applied beyond T_C = 25 °C per the published transient thermal resistance curve.

Key Specifications

Pinout & Package

2SK3060-Z-E1-AZ uses the TO-220SMD (MP-25Z) surface-mount package with isolated drain tab, optimized for automated assembly and improved thermal transfer to PCB copper. The package features three leads: Gate (pin 1), Drain (pin 2 and exposed fin), Source (pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IRFZ44NPBF, the 2SK3060-Z-E1-AZ provides superior gate protection integration, lower conduction loss at both 4 V and 10 V drive, and verified avalanche energy handling - making it the preferred choice for new industrial designs requiring reliability, compact layout, and high current density.

Availability

2SK3060-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and DC-DC power conversion systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for 2SK3060-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3060-Z-E1-AZ belongs to Renesas' industrial-grade power MOSFET product line, engineered specifically for high-current switching in factory automation, power supplies, and motor control where ruggedness, thermal stability, and avalanche tolerance are mandatory.

FAQ

What is the maximum continuous drain current rating for the 2SK3060-Z-E1-AZ?

The 2SK3060-Z-E1-AZ has a maximum continuous drain current (I_D(DC)) rating of ±70 A at T_C = 25 °C. This rating assumes proper heatsinking and is derated linearly above case temperatures of 25 °C per the published derating curve - for example, at T_C = 100 °C, the usable I_D(DC) drops to approximately 35 A. The 2SK3060-Z-E1-AZ must be operated within this limit to avoid thermal runaway or bond-wire failure.

Does the 2SK3060-Z-E1-AZ include integrated gate protection?

Yes, the 2SK3060-Z-E1-AZ incorporates a built-in gate-to-source protection diode to suppress electrostatic discharge (ESD) events during handling and assembly. This diode clamps transient voltages exceeding ±20 V (AC) or +20 V/–10 V (DC), reducing susceptibility to gate oxide damage. However, Renesas explicitly states that an external protection circuit remains necessary if operational voltages may exceed these ratings - so the 2SK3060-Z-E1-AZ still requires careful PCB layout and external TVS or RC networks in high-noise industrial environments.

What is the avalanche energy rating of the 2SK3060-Z-E1-AZ and how is it validated?

The 2SK3060-Z-E1-AZ is rated for single-pulse avalanche energy (E_AS) of 122.5 mJ under test conditions of V_DD = 30 V, R_G = 25 Ω, starting channel temperature of 25 °C, and gate drive transitioning from 20 V to 0 V. This value is measured per JEDEC JESD24-11 and confirmed in the official Renesas datasheet D13099EJ3V0DS. The 2SK3060-Z-E1-AZ achieves this through process-level ruggedness, not external circuitry - enabling reliable inductive turn-off in relay, solenoid, and motor drive applications without added clamping components.

How does the 2SK3060-Z-E1-AZ perform at low gate drive voltages like 4.0 V?

The 2SK3060-Z-E1-AZ is characterized for low-voltage drive with R_DS(on)2 = 20 mΩ maximum at V_GS = 4.0 V and I_D = 35 A. This makes it compatible with 3.3 V and 5 V logic-level controllers without requiring gate boosters. At 4.0 V, the device maintains sufficient channel enhancement to deliver >90% of its 10 V-rated current capability - a key advantage over standard MOSFETs that exhibit sharp R_DS(on) increase below 6 V. This behavior is confirmed in the "R_DS(on) vs. V_GS" and "Forward Transfer Characteristics" curves of the 2SK3060-Z-E1-AZ datasheet.

What package type is used by the 2SK3060-Z-E1-AZ and what are its thermal characteristics?

The 2SK3060-Z-E1-AZ uses the TO-220SMD (MP-25Z) surface-mount package, a variant of TO-220AB with gull-wing leads for reflow soldering. Its thermal resistance from channel to case (R_th(ch-C)) is 1.79 °C/W, significantly lower than the 83.3 °C/W from channel to ambient - confirming its suitability for PCB-mounted heatsinking. The package's exposed drain tab must be soldered to a large copper pour or thermal pad to realize this performance. The 2SK3060-Z-E1-AZ datasheet specifies mounting instructions and thermal pad layout guidelines to ensure optimal heat dissipation in production assemblies.