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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3105-T1B-A

Name: 2SK3105-T1B-A
Brand: Renesas
SKU: 2SK3105-T1B-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3105-T1B-A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3105-T1B-A.pdf

Description:: SMALL SIGNAL FET

Quantity:: RFQ Add To RFQ list

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Inventory:3,000

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Product details

Overview

2SK3105-T1B-A from Renesas Electronics is an N-channel MOSFET designed for low-voltage switching applications, featuring R_DS(on) ≤ 95 mΩ at V_GS = 10 V / I_D = 1.5 A, 30 V V_DSS, and direct 4 V gate drive capability. It is commonly used as a power switch in portable electronics such as battery-powered motor drivers and load switches.

For engineers reviewing the 2SK3105-T1B-A datasheet, 2SK3105-T1B-A pinout, 2SK3105-T1B-A application, or 2SK3105-T1B-A equivalent, key selection criteria include guaranteed 4 V logic-level drive compatibility, pulsed drain current up to ±10 A, thermal performance on FR-4 boards, and SC-96 package footprint constraints.

Technical Context

This device employs a planar vertical DMOS structure optimized for fast switching and low conduction loss in low-power DC-DC and load-switching circuits. Its gate threshold voltage (V_GS(off)) ranges from 1.0 V to 2.5 V, enabling reliable turn-on with 4 V supply rails while maintaining adequate noise margin.

Integrated body diode with t_rr = 15 ns and Q_rr = 3.7 nC supports synchronous rectification and flyback recovery in compact topologies. Total gate charge is 2.1 nC, supporting efficient driving with low-side gate drivers or microcontroller GPIOs without external buffers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for use in 3.3 V–24 V input systems
R_DS(on) @ V_GS=4.0 V	150 mΩ max - Ensures <150 mV drop at 1 A load, suitable for 4 V logic-level control
I_D(DC)	±2.5 A - Continuous current rating with derating above 25°C ambient
Q_G	2.1 nC - Enables fast switching with minimal driver power loss
t_r/t_f	44 ns / 15 ns - Supports >5 MHz PWM operation in high-efficiency converters
C_iss	211 pF - Predictable gate drive impedance for stable oscillation-free turn-on
T_ch max	150 °C - Specifies maximum junction temperature for thermal design margin

Pinout & Package

2SK3105-T1B-A is housed in the SC-96 (Mini Mold Thin Type) surface-mount package - 2.9 mm × 1.5 mm × 0.95 mm, with gull-wing leads and exposed drain pad for thermal relief.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Accepts 0–20 V gate-source bias; ESD-protected by internal diode; requires external transient suppression if exposed to >±20 V
2: Source	Reference node	Common return path for load current; ties to ground or low-side reference; body diode anode
3: Drain	Power output terminal	Connects to switched load or supply rail; thermally coupled to PCB copper for heat dissipation

Key Features

Feature	Design Value
4 V gate drive compatibility	Guaranteed turn-on at V_GS = 4.0 V (R_DS(on) ≤ 150 mΩ), eliminating need for level shifters in 3.3 V/5 V systems
Low R_DS(on) at low V_GS	135 mΩ max at 4.5 V enables efficient 5 V rail switching with <0.7 W conduction loss at 2.5 A
Fast switching with low Q_G	2.1 nC total gate charge reduces driver power consumption and improves efficiency in high-frequency SMPS
Integrated ESD protection diode	Gate-source Zener clamp rated for ±16 V allows safe handling and board-level ESD immunity without added components
Optimized body diode	15 ns reverse recovery time and 3.7 nC Q_rr support snubberless flyback and synchronous rectifier designs

Applications

Portable Power Switch	USB Load Switch
Use Scenario: Enabling/disabling power to peripheral modules in handheld medical devices or IoT sensors. IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V or 5 V rail delivery with controlled inrush. Use Value: 4 V gate compatibility ensures direct MCU GPIO control; 150 mΩ R_DS(on) limits voltage drop and self-heating during sustained 1 A loads.	Use Scenario: Hot-swap protection and overcurrent limiting in USB 2.0 host ports. IC Role / Device Role / Timing Role: High-side or low-side current-controlled switch with fast fault response. Use Value: 10 A pulsed current rating handles USB inrush transients; fast 15 ns fall time enables rapid shutdown during overcurrent events.
DC-DC Synchronous Rectifier	Battery Protection Circuit
Use Scenario: Secondary-side rectification in isolated 5 V buck-boost converters for wearables. IC Role / Device Role / Timing Role: Synchronously commutated freewheeling switch replacing Schottky diode. Use Value: Body diode t_rr = 15 ns and Q_rr = 3.7 nC minimize switching loss and ringing; low C_oss = 95 pF reduces dead-time losses.	Use Scenario: Over-discharge cutoff and charge path isolation in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET for bidirectional blocking and controlled discharge path. Use Value: Guaranteed 4 V turn-on supports direct connection to battery monitor IC outputs; 30 V V_DSS accommodates full cell voltage range including charging peaks.

Portable Power Switch

USB Load Switch

Use Scenario: Enabling/disabling power to peripheral modules in handheld medical devices or IoT sensors.

IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V or 5 V rail delivery with controlled inrush.

Use Value: 4 V gate compatibility ensures direct MCU GPIO control; 150 mΩ R_DS(on) limits voltage drop and self-heating during sustained 1 A loads.

Use Scenario: Hot-swap protection and overcurrent limiting in USB 2.0 host ports.

IC Role / Device Role / Timing Role: High-side or low-side current-controlled switch with fast fault response.

Use Value: 10 A pulsed current rating handles USB inrush transients; fast 15 ns fall time enables rapid shutdown during overcurrent events.

DC-DC Synchronous Rectifier

Battery Protection Circuit

Use Scenario: Secondary-side rectification in isolated 5 V buck-boost converters for wearables.

IC Role / Device Role / Timing Role: Synchronously commutated freewheeling switch replacing Schottky diode.

Use Value: Body diode t_rr = 15 ns and Q_rr = 3.7 nC minimize switching loss and ringing; low C_oss = 95 pF reduces dead-time losses.

Use Scenario: Over-discharge cutoff and charge path isolation in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET for bidirectional blocking and controlled discharge path.

Use Value: Guaranteed 4 V turn-on supports direct connection to battery monitor IC outputs; 30 V V_DSS accommodates full cell voltage range including charging peaks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ROHM RTR020N03	R_DS(on) = 45 mΩ @ V_GS = 4.5 V; smaller 1.6 mm × 1.6 mm TSON package; higher Q_G (3.2 nC)	Better conduction efficiency but slower switching; tighter layout constraints	Preferred when lower R_DS(on) and space savings outweigh gate drive strength requirements
ON Semiconductor NTMFS4C09NT1G	R_DS(on) = 6.5 mΩ @ V_GS = 4.5 V; SO-8FL package; 30 V rating; higher I_D(pulse) = 60 A	Higher current capacity and thermal mass; larger footprint and cost	Selected for high-pulse-load applications where 2SK3105-T1B-A's 10 A pulse limit is insufficient

Compared with ROHM RTR020N03 and ON Semi NTMFS4C09NT1G, the 2SK3105-T1B-A offers balanced trade-offs: moderate R_DS(on), ultra-low gate charge, and proven reliability in space-constrained portable designs - making it optimal for cost-sensitive, low-to-moderate power switching where fast edge rates and minimal driver overhead matter most.

Availability

2SK3105-T1B-A is available at Aetrix Electronics and suitable for portable power switches, USB load management, battery protection circuits, and synchronous rectifier designs requiring stable component supply across production lifecycles.

Supply support for 2SK3105-T1B-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and discrete solutions.

The 2SK3105-T1B-A belongs to Renesas' legacy logic-level MOSFET product line, engineered specifically for energy-efficient, low-voltage switching in battery-powered consumer and industrial equipment.

FAQ

What is the maximum continuous drain current rating for the 2SK3105-T1B-A?

The 2SK3105-T1B-A has a DC drain current rating of ±2.5 A at T_A = 25°C. This value decreases with rising ambient temperature and must be derated per the SOA curve in the datasheet - e.g., ~1.5 A at 70°C ambient on a standard FR-4 board. The 2SK3105-T1B-A is not rated for continuous operation beyond these limits without active cooling or board-level thermal enhancements.

Does the 2SK3105-T1B-A support 3.3 V logic-level gate drive?

The 2SK3105-T1B-A is specified for guaranteed turn-on at V_GS = 4.0 V (R_DS(on) ≤ 150 mΩ), not 3.3 V. While typical V_GS(off) starts at 1.0 V, actual R_DS(on) rises sharply below 4 V - e.g., no guaranteed value at 3.3 V. For robust 3.3 V operation, the 2SK3105-T1B-A requires verification under worst-case conditions or selection of a true 3.3 V logic-level MOSFET.

What is the thermal resistance of the 2SK3105-T1B-A on a standard PCB?

The 2SK3105-T1B-A exhibits θ_JA ≈ 400°C/W when mounted on a 50 mm × 50 mm × 1.6 mm FR-4 board (per Note 2 in Absolute Maximum Ratings). Its transient thermal resistance r_th(ch–A) drops to ~100°C/W for 10 µs pulses. These values assume proper copper pour under the drain pad - the 2SK3105-T1B-A's thermal performance is highly dependent on PCB layout.

Is the body diode in the 2SK3105-T1B-A suitable for reverse recovery in switching applications?

Yes - the 2SK3105-T1B-A's integrated source-drain body diode has t_rr = 15 ns and Q_rr = 3.7 nC at I_F = 2.5 A, making it suitable for non-critical synchronous rectification and flyback recovery. However, its softness factor and lack of specified reverse recovery softness mean it is not recommended for high-di/dt resonant topologies without snubbing - unlike purpose-designed FRDs or SiC Schottkys.

What does the "-T1B-A" suffix indicate in the 2SK3105-T1B-A part number?

The "-T1B-A" suffix denotes tape-and-reel packaging per JEDEC standard: T1B = 3 kΩ reel size (3,000 pcs/reel), A = RoHS-compliant lead-free finish. This marking aligns with Renesas' post-2006 packaging conventions and confirms the 2SK3105-T1B-A is qualified for automated SMT assembly with standard pick-and-place equipment.

2SK3105-T1B-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3105-T1B-A FAQ

1.How can I place an order for 2SK3105-T1B-A through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3105-T1B-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3105-T1B-A reliable?

The price and inventory of 2SK3105-T1B-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3105-T1B-A is usually 5 days.

3.What payment methods are accepted for 2SK3105-T1B-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3105-T1B-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3105-T1B-A?

2SK3105-T1B-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3105-T1B-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3105-T1B-A?

For technical support, including 2SK3105-T1B-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3105-T1B-A requirements.

6.How does Aetrix verify that 2SK3105-T1B-A is sourced from the original manufacturer or authorized distributors?

All 2SK3105-T1B-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3105-T1B-A meets industry standards.

7.What is the process for return or replacement of 2SK3105-T1B-A?

All 2SK3105-T1B-A units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3105-T1B-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3105-T1B-A part is unused and in its original packaging.

Return procedure for 2SK3105-T1B-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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