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Renesas 2SK3109-AZ

Part No.:
2SK3109-AZ
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SK3109-AZ.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,900

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Product details

Overview

2SK3109-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage DC/DC converter switching applications, featuring 200 V drain-source breakdown voltage, 0.4 Ω max RDS(on) at VGS = 10 V and ID = 5.0 A, ±30 V gate voltage rating, built-in gate protection diode, and avalanche-rated operation up to 35 mJ.

For engineers reviewing the 2SK3109-AZ datasheet, 2SK3109-AZ pinout, 2SK3109-AZ application, or 2SK3109-AZ equivalent, this page delivers verified package mapping (TO-220AB), confirmed terminal roles, real-world switching timing (td(on) = 12 ns, tf = 20 ns), and validated alternatives for industrial power conversion designs.

Technical Context

The 2SK3109-AZ employs a vertical DMOS structure optimized for high-voltage switching with low conduction loss and fast turn-on/off characteristics. Its gate threshold voltage range (2.5–4.5 V) ensures reliable enhancement-mode operation across temperature, while the integrated gate-source ESD protection diode supports robust handling in assembly environments.

Designed for unidirectional high-side or low-side switching, it delivers 50 W total power dissipation at TC = 25°C and sustains single-pulse avalanche energy of 35 mJ under defined test conditions (VDD = 100 V, RG = 25 Ω, Tch = 25°C). The body diode exhibits VF(S-D) = 1.0 V at IF = 10 A and reverse recovery time trr = 250 ns.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 200 V - Supports DC/DC converters operating up to 170 V input rails with safety margin.
RDS(on) max 0.4 Ω @ VGS = 10 V, ID = 5 A - Enables <1 W conduction loss at 5 A, critical for thermal management in compact converters.
QG 18 nC - Low gate charge allows efficient driving with standard gate drivers and reduces switching losses at 100–500 kHz.
td(off) 40 ns - Fast turn-off enables high-frequency PWM control without excessive overlap loss.
EAS 35 mJ - Rated single-pulse avalanche capability permits safe operation during inductive load transients without external snubbers.
Ciss 400 pF typ. @ VDS = 10 V - Low input capacitance minimizes driver power demand and improves noise immunity.
ID(pulse) ±30 A @ PW ≤ 10 µs - Supports short-circuit current limiting and peak-load handling in SMPS designs.

Pinout & Package

2SK3109-AZ is supplied in TO-220AB (MP-25) package with isolated metal tab (Drain-connected fin), suitable for through-hole mounting and heatsink attachment. Thermal resistance Rth(ch-C) = 2.5 °C/W enables 50 W dissipation with moderate heatsinking.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control electrode Receives voltage-controlled signal; ±30 V rating allows direct drive from logic-level controllers or isolated gate drivers.
2 (Drain) High-side power terminal Connected to internal fin; electrically tied to metal tab - must be insulated from heatsink unless referenced to system ground.
3 (Source) Power return / reference node Serves as common return path for load current and gate drive reference; low-inductance layout critical for stable switching.
Metal Tab (Fin) Drain extension / thermal path Provides mechanical mounting and thermal conduction; electrically identical to Pin 2 (Drain); requires insulating washer if mounted to grounded heatsink.

Key Features

Feature Design Value
Avalanche-rated operation Guaranteed 35 mJ single-pulse energy absorption eliminates need for external clamping in flyback or boost converter primary switches.
Built-in gate protection diode ESD protection between Gate and Source prevents damage during PCB handling and reflow, reducing need for external TVS on gate traces.
Low RDS(on) × QG figure-of-merit 0.4 Ω × 18 nC = 7.2 Ω·nC - Balances conduction and switching losses for optimal efficiency in 100–300 kHz DC/DC topologies.
Body diode with controlled trr 250 ns reverse recovery time at di/dt = 50 A/µs - Enables use in synchronous rectification or freewheeling paths without excessive ringing.
Surface mount compatible variant available 2SK3109-ZJ (TO-263) shares identical electrical specs - allows drop-in replacement in space-constrained designs requiring SMT assembly.

Applications

Industrial DC/DC Converters AC-DC Adapter Primary Switch

Use Scenario: Isolated 24 V–48 V output DC/DC converter in programmable logic controller (PLC) power supplies.

IC Role / Device Role / Timing Role: High-side switch in forward or half-bridge topology operating at 200 kHz with 5–10 A load current.

Use Value: 0.4 Ω RDS(on) limits conduction loss to <0.4 W at 10 A, enabling natural convection cooling in sealed enclosures.

Use Scenario: 120 VAC-input, 12 V/5 A offline adapter for industrial sensors.

IC Role / Device Role / Timing Role: Primary-side switching FET in flyback converter with 65 kHz PWM and 200 V clamp voltage.

Use Value: 35 mJ avalanche rating absorbs leakage inductance spikes without snubber circuitry, reducing BOM count and board area.

Motor Drive Half-Bridge Leg High-Voltage LED Driver Switch

Use Scenario: 24–48 V brushed DC motor control in automated guided vehicle (AGV) motion modules.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration with PWM frequency up to 30 kHz and peak current up to 30 A.

Use Value: 30 A pulse rating and 2.5 °C/W channel-to-case thermal resistance support intermittent 200% torque surges without thermal shutdown.

Use Scenario: Constant-current driver for 40–80 V string of high-brightness LEDs in industrial lighting fixtures.

IC Role / Device Role / Timing Role: Series-pass switch modulated via analog dimming or PWM in buck-derived topology.

Use Value: 200 V VDSS accommodates LED string voltage plus line transients, while low Ciss ensures clean dimming response without gate oscillation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP20NM20 RDS(on) = 0.22 Ω @ 10 V but VDSS = 200 V same; QG = 25 nC higher; TO-220 package identical. Lower RDS(on) improves efficiency at high DC loads but higher QG increases switching loss above 250 kHz. Prefer for <200 kHz, high-current linear regulation; avoid where gate drive strength is limited.
IRF640NPbF VDSS = 200 V, RDS(on) = 0.18 Ω, QG = 39 nC; no specified avalanche rating; TO-220AB footprint compatible. Lacks guaranteed avalanche energy - requires external RCD clamp in inductive switching applications. Choose only when strict cost targets override reliability requirements and layout allows snubber integration.

Compared with STP20NM20 and IRF640NPbF, the 2SK3109-AZ offers superior balance of ruggedness (rated avalanche), gate drive simplicity (low QG), and thermal performance (2.5 °C/W), making it preferred for industrial-grade DC/DC converters where field reliability and long-term stability are mandatory.

Availability

2SK3109-AZ is available at Aetrix Electronics and suitable for industrial DC/DC converters, AC-DC adapters, and motor drive half-bridge circuits requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for 2SK3109-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for industrial, automotive, and infrastructure markets.

The 2SK3109-AZ belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for ruggedized industrial power conversion where avalanche tolerance, thermal stability, and long-term parametric consistency are essential.

FAQ

What is the maximum continuous drain current rating for the 2SK3109-AZ at case temperature 25°C?

The 2SK3109-AZ has a maximum continuous drain current ID(DC) of ±10 A at TC = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes adequate heatsinking to maintain case temperature at or below 25°C; derating applies above that temperature per the published derating curve. For reliable operation, design margins should account for transient peaks and thermal interface resistance in the final 2SK3109-AZ implementation.

Does the 2SK3109-AZ include integrated gate protection, and how is it implemented?

Yes, the 2SK3109-AZ integrates a gate-to-source protection diode as part of its internal equivalent circuit. This diode safeguards the gate oxide against electrostatic discharge (ESD) during handling and assembly. However, the datasheet explicitly states that external protection remains necessary if voltages exceeding the ±30 V gate rating may occur in-system - such as from inductive kickback or poor PCB layout - meaning the 2SK3109-AZ's internal diode is supplemental, not sufficient alone for full system-level robustness.

Can the 2SK3109-AZ be used in avalanche mode repeatedly, or is the 35 mJ rating strictly for single-pulse events?

The 35 mJ avalanche energy rating for the 2SK3109-AZ is specified for single-pulse conditions only (starting Tch = 25°C, VDD = 100 V, RG = 25 Ω). The datasheet does not characterize repetitive avalanche behavior, and Renesas does not guarantee safe operation beyond single-event stress. Therefore, the 2SK3109-AZ should be applied in circuits where avalanche occurs infrequently - e.g., fault protection - not as a routine operating mode. Repeated avalanche risks parametric shift or failure of the 2SK3109-AZ.

What is the typical gate-to-source threshold voltage range for the 2SK3109-AZ, and how does it vary with temperature?

The 2SK3109-AZ has a gate-to-source threshold voltage VGS(off) range of 2.5 V to 4.5 V at VDS = 10 V and ID = 1 mA. The datasheet's Typical Characteristics show VGS(off) decreases with rising channel temperature - from ~4.3 V at −25°C to ~2.7 V at 125°C - confirming negative temperature coefficient behavior. This drift must be considered when designing gate drive circuits for wide-temperature industrial environments using the 2SK3109-AZ.

Is the metal tab on the 2SK3109-AZ's TO-220AB package electrically isolated from the leads?

No, the metal tab (fin) on the 2SK3109-AZ in TO-220AB package is internally connected to the Drain (Pin 2), as confirmed by the package drawing and equivalent circuit diagram. It is not electrically isolated - therefore, when mounting the 2SK3109-AZ to a heatsink, an insulating washer and shoulder washer must be used unless the heatsink is intentionally held at Drain potential. Failure to isolate may cause short circuits or ground loop issues in the 2SK3109-AZ application.

2SK3109-AZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SK3109-AZ FAQ

1.How can I place an order for 2SK3109-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3109-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3109-AZ reliable?

The price and inventory of 2SK3109-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3109-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3109-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3109-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3109-AZ?

2SK3109-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3109-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3109-AZ?

For technical support, including 2SK3109-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3109-AZ requirements.

6.How does Aetrix verify that 2SK3109-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3109-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3109-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3109-AZ?

All 2SK3109-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3109-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3109-AZ part is unused and in its original packaging.

Return procedure for 2SK3109-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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