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Renesas 2SK3109-Z-E1-AZ
- Part No.:
- 2SK3109-Z-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK3109-Z-E1-AZ.pdf
- Description:
- POWER FIELD-EFFECT TRANSISTOR
- Quantity:
- Payment:
- Shipping:
Inventory:12,400
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Product details
Overview
2SK3109-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage DC/DC converters, featuring 200 V VDSS, 0.4 Ω RDS(on) at VGS = 10 V and ID = 5 A, ±30 V gate voltage rating, built-in gate protection diode, and avalanche-rated operation up to 10 A / 35 mJ.
For engineers reviewing the 2SK3109-Z-E1-AZ datasheet, 2SK3109-Z-E1-AZ pinout, 2SK3109-Z-E1-AZ application, or 2SK3109-Z-E1-AZ equivalent, this discrete power switch supports high-efficiency switching in industrial power supplies, motor drives, and uninterruptible power systems where robustness under inductive load stress and low conduction loss are critical.
Technical Context
The 2SK3109-Z-E1-AZ employs a planar vertical DMOS structure optimized for fast switching and rugged avalanche performance. Its gate threshold voltage (VGS(off)) ranges from 2.5 V to 4.5 V, enabling reliable turn-on with standard 10 V logic-level drive while maintaining noise immunity. The device integrates a monolithic gate protection diode to suppress ESD-induced gate oxide failure.
Thermal design is supported by a low channel-to-case thermal resistance of 2.5 °C/W and a maximum channel temperature of 150 °C. Switching behavior is characterized by 12 ns turn-on delay, 34 ns rise time, and 40 ns turn-off delay under 100 V VDD, 5 A ID, and 10 Ω gate resistance - confirming suitability for hard-switched topologies operating up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - Supports primary-side switching in 100–170 VAC offline SMPS and 48–96 VDC industrial bus applications. |
| RDS(on) max | 0.4 Ω @ VGS = 10 V, ID = 5 A - Enables <1 W conduction loss at 5 A, reducing heatsink requirements in compact power stages. |
| ID(DC) | ±10 A @ TC = 25°C - Rated for continuous 10 A drain current when mounted on adequately sized heatsink. |
| EAS | 35 mJ - Withstands single-pulse inductive energy without failure, simplifying snubber design in relay drivers and solenoid controls. |
| Ciss typ | 400 pF @ VDS = 10 V - Low input capacitance reduces gate drive power and improves switching speed in high-frequency converters. |
| QG | 18 nC @ VDD = 160 V - Enables efficient gate driving with standard MOSFET drivers (e.g., TC4420) without excessive Miller plateau duration. |
| VF(S-D) | 1.0 V @ IF = 10 A - Body diode forward voltage allows limited synchronous rectification or freewheeling in low-duty-cycle topologies. |
Pinout & Package
2SK3109-Z-E1-AZ is supplied in TO-220AB (MP-25) package with isolated metal tab (Drain-connected fin), compatible with standard through-hole mounting and heatsinking. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Receives voltage-controlled signal to modulate channel conductivity; requires external gate resistor (typically 10–47 Ω) to damp oscillation and limit peak current. |
| Pin 2 (Drain) | Main high-side current path | Connected to internal fin - electrically tied to Drain and serves as mechanical heatsink interface; must be insulated from chassis if floating topology used. |
| Pin 3 (Source) | Reference node for gate drive | Serves as return path for load current and gate drive loop; layout must minimize inductance to prevent spurious turn-on during dV/dt transients. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guaranteed single-pulse energy handling (EAS = 35 mJ) eliminates need for external clamping in inductive switching circuits like motor gate drivers. |
| Built-in gate protection diode | Monolithic Zener between Gate and Source limits transient overvoltage to ±30 V, reducing external ESD protection component count. |
| Low RDS(on) with logic-level drive | 0.4 Ω on-resistance achieved at VGS = 10 V enables direct interfacing with microcontroller GPIO or dedicated gate drivers without level-shifting. |
| High dV/dt immunity | Specified Crss/Ciss ratio and layout-optimized die reduce susceptibility to false turn-on during fast drain voltage transitions. |
| Surface-mount compatible variant available | TO-263 (MP-25ZJ) version enables automated assembly in space-constrained power modules without sacrificing thermal performance. |
Applications
| Industrial DC/DC Converters | Motor Drive Half-Bridge |
|---|---|
Use Scenario: Step-down conversion from 100–200 VDC bus to 12–24 VDC for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: Primary-side high-side switch in non-isolated buck or flyback topology, operating at 100–300 kHz. Use Value: Low RDS(on) minimizes conduction loss across wide load range; avalanche rating absorbs leakage inductance spikes without snubber. | Use Scenario: Driving brushed DC motors or stepper coil phases in factory automation actuators. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration controlling direction and PWM speed modulation. Use Value: Fast switching (td(on)/td(off) ≤ 52 ns combined) enables precise torque control; body diode supports freewheeling during off-time. |
| Uninterruptible Power Supplies | High-Voltage Relay Drivers |
Use Scenario: Inverter stage converting battery-backed 48 VDC to 120/230 VAC output in line-interactive UPS units. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch in full-bridge inverter leg, switching at 20–50 kHz. Use Value: 200 V VDSS withstands reflected AC peaks; low QG reduces gate drive losses at high frequency. | Use Scenario: Solid-state replacement for electromechanical relays controlling HVAC dampers or industrial valves. IC Role / Device Role / Timing Role: Single-pole, high-voltage switch interfacing microcontroller outputs to 120/240 VAC loads via opto-isolated driver. Use Value: Avalanche capability ensures reliability during inductive kickback from solenoid coils; TO-220AB package allows direct heatsink mounting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V VDSS, 0.22 Ω RDS(on), TO-220 package, no built-in gate Zener | Lower on-resistance but lacks integrated gate protection - requires external TVS or Zener clamp | Preferred when lowest conduction loss is prioritized and board space allows external protection components. |
| IRF640NPbF | 200 V VDSS, 0.18 Ω RDS(on), TO-220, higher Ciss (650 pF), no avalanche rating | Higher switching losses due to larger input capacitance; not rated for repetitive avalanche stress | Acceptable for non-inductive or low-dV/dt applications where cost is critical and avalanche robustness is not required. |
Compared with STP20NM20 and IRF640NPbF, the 2SK3109-Z-E1-AZ trades slightly higher RDS(on) for guaranteed avalanche ruggedness and integrated gate protection - making it more suitable for unclamped inductive loads and space-constrained designs where external protection adds complexity.
Availability
2SK3109-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial DC/DC converters, motor drive half-bridges, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for 2SK3109-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.
The 2SK3109-Z-E1-AZ belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for rugged, high-efficiency switching in industrial power conversion and motor control applications.
FAQ
What is the maximum continuous drain current rating for the 2SK3109-Z-E1-AZ?
The 2SK3109-Z-E1-AZ is rated for ±10 A DC drain current at case temperature TC = 25°C. This rating assumes proper heatsinking - derating applies linearly above 25°C per the datasheet's total power dissipation vs. case temperature curve. At TC = 100°C, the usable ID(DC) drops to approximately 2.5 A. Always verify thermal design using the specified Rth(ch-C) = 2.5 °C/W value in your actual layout.
Does the 2SK3109-Z-E1-AZ have a built-in gate protection diode?
Yes, the 2SK3109-Z-E1-AZ integrates a monolithic Zener diode between Gate and Source to clamp transient overvoltage to ±30 V, protecting the gate oxide from ESD and switching-induced spikes. However, Renesas explicitly states that an external protection circuit remains necessary if voltages exceeding the rated ±30 V may occur - such as from poor PCB layout or uncontrolled inductive kickback.
What is the avalanche energy rating of the 2SK3109-Z-E1-AZ and how is it tested?
The 2SK3109-Z-E1-AZ is rated for 35 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = 100 V, starting channel temperature Tch = 25°C, gate resistance RG = 25 Ω, and gate drive transitioning from 20 V to 0 V. This rating validates its ability to absorb inductive energy without failure in applications like relay drivers and motor phase switches where snubbers are omitted.
Which package type does the 2SK3109-Z-E1-AZ use, and is the drain electrically connected to the tab?
The 2SK3109-Z-E1-AZ uses the TO-220AB (MP-25) package, and yes - the metal tab (Pin 2) is internally connected to the Drain terminal. This configuration provides both electrical connection and thermal path to an external heatsink. When mounting, ensure adequate electrical isolation (e.g., mica washer + thermal paste) if the heatsink is grounded or at a different potential than the Drain node.
Can the 2SK3109-Z-E1-AZ be used as a synchronous rectifier in a DC/DC converter?
The 2SK3109-Z-E1-AZ can serve as a synchronous rectifier in low-duty-cycle or low-frequency DC/DC topologies due to its 1.0 V body diode forward voltage at 10 A and low RDS(on). However, its relatively high QG (18 nC) and lack of optimized reverse recovery characteristics make it less ideal than purpose-designed synchronous rectifiers. For best efficiency above 100 kHz, consider dedicated low-QG, low-VF devices - but the 2SK3109-Z-E1-AZ remains viable for cost-sensitive, medium-frequency designs.
2SK3109-Z-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK3109-Z-E1-AZ FAQ
1.How can I place an order for 2SK3109-Z-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3109-Z-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3109-Z-E1-AZ reliable?
The price and inventory of 2SK3109-Z-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3109-Z-E1-AZ is usually 5 days.
3.What payment methods are accepted for 2SK3109-Z-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3109-Z-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3109-Z-E1-AZ?
2SK3109-Z-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3109-Z-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3109-Z-E1-AZ?
For technical support, including 2SK3109-Z-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3109-Z-E1-AZ requirements.
6.How does Aetrix verify that 2SK3109-Z-E1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3109-Z-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3109-Z-E1-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3109-Z-E1-AZ?
All 2SK3109-Z-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3109-Z-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3109-Z-E1-AZ part is unused and in its original packaging.
Return procedure for 2SK3109-Z-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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