Renesas 2SK3111-Z-E1-AZ

Overview

2SK3111-Z-E1-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications including DC/DC converters and actuator drivers. It features a 200 V drain-source breakdown voltage, 180 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 10 A, ±30 V gate-source voltage rating, 20 A continuous drain current, and built-in gate protection diode.

For engineers reviewing the 2SK3111-Z-E1-AZ datasheet, 2SK3111-Z-E1-AZ pinout, 2SK3111-Z-E1-AZ application, or 2SK3111-Z-E1-AZ equivalent, key selection criteria include avalanche energy rating (100 mJ), low input capacitance (1000 pF typ.), and TO-263 surface-mount package suitability for high-power industrial switching designs.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its forward transfer admittance |y_fs| of 3.0 S at V_DS = 10 V and I_D = 10 A supports fast gate drive response, while its 25 ns turn-on delay and 40 ns fall time enable efficient operation up to several hundred kHz.

The integrated source-drain body diode exhibits 1.0 V forward voltage at 20 A and 300 ns reverse recovery time under specified di/dt conditions. Avalanche-rated capability (I_AS = 20 A, E_AS = 100 mJ) allows controlled inductive energy dissipation without external snubbers in non-synchronous buck or flyback configurations.

Key Specifications

Pinout & Package

2SK3111-Z-E1-AZ is housed in a TO-263 (MP-25ZJ) surface-mount package with exposed drain tab for thermal enhancement. The package features three main terminals plus an integral heat sink pad (Drain-connected fin).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP20NM20 and IRF640NPBF, the 2SK3111-Z-E1-AZ delivers superior thermal performance via TO-263 packaging, guaranteed avalanche ruggedness for unclamped inductive loads, and integrated gate protection-making it optimal for industrial motor drives and DC/DC converters where reliability under transient stress is critical.

Availability

2SK3111-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial DC/DC converters, actuator driver circuits, and motor control inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant surface-mount power switching.

Supply support for 2SK3111-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial, automotive, and infrastructure markets.

The 2SK3111 series belongs to Renesas' industrial-grade discrete power MOSFET product line, engineered specifically for high-reliability switching in 200 V-class industrial power supplies and motion control systems.

FAQ

What is the maximum continuous drain current rating for the 2SK3111-Z-E1-AZ?

The 2SK3111-Z-E1-AZ has a maximum continuous drain current (I_D(DC)) of ±20 A at case temperature T_C = 25 °C. This rating decreases linearly with rising case temperature, reaching zero at T_C ≈ 160 °C per the derating curve in the datasheet. For sustained operation, thermal design must ensure the TO-263 package maintains safe junction temperature within its 150 °C limit.

Does the 2SK3111-Z-E1-AZ have avalanche capability, and how is it specified?

Yes, the 2SK3111-Z-E1-AZ is explicitly rated for single-pulse avalanche operation: I_AS = 20 A and E_AS = 100 mJ under defined test conditions (V_DD = 100 V, R_G = 25 Ω, starting T_ch = 25 °C). This rating confirms its ability to safely absorb inductive energy during unclamped switching events, a key requirement in non-synchronous DC/DC and motor drive applications.

What package type is used for the 2SK3111-Z-E1-AZ, and how does it differ from other variants in the 2SK3111 family?

The 2SK3111-Z-E1-AZ uses the TO-263 (MP-25ZJ) surface-mount package, distinguished by its exposed drain tab for enhanced thermal conduction. Unlike the through-hole TO-220AB (2SK3111) and TO-262 (2SK3111-S) variants, the TO-263 version enables automated PCB assembly and achieves lower thermal resistance (R_th(ch-C) = 1.92 °C/W), making it preferred for space-constrained, high-power-density industrial designs.

Is there a built-in protection diode in the 2SK3111-Z-E1-AZ, and what is its function?

Yes, the 2SK3111-Z-E1-AZ integrates a gate-to-source protection diode, as confirmed in the Equivalent Circuit diagram and Features section. This diode safeguards the gate oxide against electrostatic discharge (ESD) during handling and board assembly. However, the datasheet explicitly states that an external protection circuit remains necessary if voltages exceeding ±30 V may appear across the gate-source terminals in actual operation.

What is the typical input capacitance (C_iss) of the 2SK3111-Z-E1-AZ, and why does it matter in circuit design?

The 2SK3111-Z-E1-AZ has a typical input capacitance (C_iss) of 1000 pF at V_DS = 10 V and V_GS = 0 V. This parameter directly impacts gate drive requirements: higher C_iss demands greater peak gate current to achieve fast switching, increasing driver power dissipation and influencing layout parasitics. Designers must size gate resistors and drivers accordingly to balance switching speed, EMI, and drive loss-especially critical in high-frequency DC/DC converters.