Renesas 2SK3113(0)-Z-E1-AZ

Overview

2SK3113(0)-Z-E1-AZ from Renesas Electronics is an N-channel enhancement-mode DMOS power MOSFET designed for high-voltage switching applications including offline AC-DC adapters and flyback converters. It delivers R_DS(on) = 4.4 Ω max at V_GS = 10 V and I_D = 1.0 A, supports 600 V V_DSS, and features low gate charge (Q_G = 9 nC typ) for efficient hard-switching operation in compact power supplies.

For engineers reviewing the 2SK3113(0)-Z-E1-AZ datasheet, 2SK3113(0)-Z-E1-AZ pinout, 2SK3113(0)-Z-E1-AZ application, or 2SK3113(0)-Z-E1-AZ equivalent, key selection criteria include avalanche ruggedness (E_AS = 2.7 mJ), body diode reverse recovery performance (t_rr = 0.9 μs), thermal resistance (R_th(ch-C) = 6.25 °C/W), and TO-252 (MP-3Z) surface-mount package compatibility with board-level thermal management.

Technical Context

This device operates as a unidirectional high-side or low-side switch in non-synchronous DC-DC topologies. Its gate threshold voltage (V_GS(off) = 2.5–3.5 V) enables direct drive from standard 5 V or 3.3 V logic controllers, while its 600 V blocking rating targets universal-input (85–265 VAC) SMPS designs. The integrated gate-source ESD protection diode provides basic handling robustness but does not replace external gate clamping in high-dV/dt environments.

The 2SK3113(0)-Z-E1-AZ exhibits strong temperature stability: R_DS(on) increases only ~1.8× from 25°C to 125°C, and V_GS(off) decreases linearly with channel temperature (from ~3.5 V at −25°C to ~2.0 V at 150°C), enabling predictable turn-off margin across operating range.

Key Specifications

Pinout & Package

2SK3113(0)-Z-E1-AZ is housed in a TO-252 (MP-3Z) surface-mount package with exposed drain pad for thermal conduction. The package measures 6.5 × 4.4 × 2.3 mm and features gull-wing leads compatible with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP6NK60ZFP and IXTP50N10P, the 2SK3113(0)-Z-E1-AZ offers superior gate charge efficiency and surface-mount compatibility for compact adapter designs, though it lacks the pulse current headroom of the ST Micro part and cannot replace the IXYS device in low-voltage, high-current roles.

Availability

2SK3113(0)-Z-E1-AZ is available at Aetrix Electronics and suitable for AC-DC adapters, flyback converters, and offline LED drivers requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SK3113(0)-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SK3113(0)-Z-E1-AZ belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for cost-sensitive, high-reliability offline power conversion in consumer and industrial equipment.

FAQ

What is the maximum continuous drain current rating for the 2SK3113(0)-Z-E1-AZ at 25°C case temperature?

The 2SK3113(0)-Z-E1-AZ has a maximum continuous drain current (I_D(DC)) rating of ±2.0 A at T_C = 25°C. This rating assumes proper PCB copper area (40 mm × 40 mm × 1.6 mm glass epoxy) and adequate thermal relief. At elevated case temperatures, derating applies per the datasheet's PT vs. TC curve-e.g., only ~1.2 A is sustainable at T_C = 100°C. Always verify thermal design using R_th(ch-C) = 6.25 °C/W.

Does the 2SK3113(0)-Z-E1-AZ have built-in gate protection, and is external protection still required?

Yes, the 2SK3113(0)-Z-E1-AZ integrates a gate-source Zener diode for ESD protection (±2 kV HBM). However, Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." This means external gate clamping (e.g., 18 V TVS) remains necessary in circuits subject to fast transients, ringing, or Miller-induced overshoot-especially in high-dV/dt flyback primary switches.

Can the 2SK3113(0)-Z-E1-AZ be used in synchronous rectification applications?

No-the 2SK3113(0)-Z-E1-AZ is an N-channel enhancement-mode MOSFET intended for primary-side switching, not secondary-side synchronous rectification. Its body diode forward voltage (V_F(S-D) = 0.9 V) and reverse recovery time (t_rr = 0.9 μs) are not optimized for low-loss freewheeling. For synchronous rectification, dedicated low-V_F, fast-recovery MOSFETs like the Si2302 or IPP040N04LG are recommended instead of the 2SK3113(0)-Z-E1-AZ.

What is the gate threshold voltage range for the 2SK3113(0)-Z-E1-AZ, and how does it affect drive requirements?

The 2SK3113(0)-Z-E1-AZ has a gate threshold voltage (V_GS(off)) range of 2.5–3.5 V at I_D = 1 mA. This allows reliable turn-on with standard 5 V logic or PWM controllers, but full enhancement (to achieve R_DS(on) ≤ 4.4 Ω) requires V_GS ≥ 10 V. Driving at only 5 V yields significantly higher R_DS(on) (~12–15 Ω), increasing conduction loss-so the 2SK3113(0)-Z-E1-AZ must be paired with a gate driver capable of 10 V output.

Is the 2SK3113(0)-Z-E1-AZ RoHS compliant and lead-free?

Yes-the 2SK3113(0)-Z-E1-AZ is RoHS compliant and lead-free. Renesas confirms environmental compliance in its general notices, and the "-E1-AZ" suffix aligns with Renesas' lead-free, halogen-free packaging designation per JEDEC standards. The device meets EU RoHS Directive 2011/65/EU and is suitable for use in environmentally regulated markets without restriction.