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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3113-Z-E1-AZ

Name: 2SK3113-Z-E1-AZ
Brand: Renesas
SKU: 2SK3113-Z-E1-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3113-Z-E1-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3113-Z-E1-AZ.pdf

Description:: SMALL SIGNAL FET

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Product details

Overview

2SK3113-Z-E1-AZ from Renesas Electronics is an N-channel enhancement-mode DMOS power MOSFET in TO-252 (MP-3Z) package, designed for high-voltage switching applications including AC adapters and offline SMPS. It delivers R_DS(on) = 4.4 Ω max at V_GS = 10 V and I_D = 1.0 A, supports 600 V V_DSS, and features low gate charge (Q_G = 9 nC typ.) for efficient hard-switching operation.

For engineers reviewing the 2SK3113-Z-E1-AZ datasheet, 2SK3113-Z-E1-AZ pinout, 2SK3113-Z-E1-AZ application, or 2SK3113-Z-E1-AZ equivalent, key selection criteria include avalanche energy rating (E_AS = 2.7 mJ), body diode reverse recovery performance (t_rr = 0.9 μs, Q_rr = 2.0 μC), and thermal resistance (R_th(ch-C) = 6.25 °C/W) under standard PCB mounting conditions.

Technical Context

This device operates as a unidirectional high-side or low-side switch in flyback, forward, and resonant converter topologies. Its gate threshold voltage (V_GS(off) = 2.5–3.5 V) ensures reliable turn-on with standard 10 V gate drivers, while its 600 V blocking capability enables use in universal-input 85–265 V_AC systems without snubber networks.

The integrated body diode exhibits fast reverse recovery (t_rr = 0.9 μs) and low forward voltage (V_F(S-D) = 0.9 V at I_F = 2.0 A), supporting synchronous rectification in secondary-side configurations. Avalanche-rated design allows single-pulse energy handling up to 2.7 mJ at T_ch = 25°C, enabling robustness against inductive switching transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports full-wave rectified input up to 425 V_DC with margin for line surges and ringing.
R_DS(on) max	4.4 Ω @ V_GS = 10 V, I_D = 1.0 A - Enables <1.5 W conduction loss at 1 A DC current in compact layouts.
Q_G typ	9 nC @ V_DD = 450 V - Reduces gate drive power and switching transition time in 50–100 kHz SMPS designs.
E_AS	2.7 mJ @ V_DD = 150 V - Withstands single inductive turn-off events without failure in transformer-coupled circuits.
t_rr	0.9 μs @ I_F = 2.0 A, di/dt = 50 A/μs - Limits switching loss and EMI during body diode commutation in quasi-resonant converters.
R_th(ch-C)	6.25 °C/W - Allows 20 W dissipation at ΔT = 125°C with minimal heatsinking when mounted on 40 mm × 40 mm glass epoxy board.

Pinout & Package

2SK3113-Z-E1-AZ uses the TO-252 (MP-3Z) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in a single-row configuration compatible with automated assembly and reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires ≤±30 V drive and external ESD protection per datasheet note.
2 (Drain)	High-voltage output node	Connected to primary-side switching node (e.g., transformer primary or bulk capacitor); electrically tied to exposed metal tab for thermal path.
3 (Source)	Reference terminal / return path	Serves as common reference for gate drive and current sensing; connects to ground or low-side shunt in buck/forward topologies.

Key Features

Feature	Design Value
Low R_DS(on) with high V_DSS	4.4 Ω @ 600 V enables higher efficiency than comparable 500 V MOSFETs in same package without derating.
Low gate charge	9 nC total charge reduces driver IC loading and improves PWM resolution at high frequencies (>100 kHz).
Avalanche-rated operation	2.7 mJ single-pulse rating eliminates need for external clamping in non-isolated flyback snubberless designs.
Fast body diode	0.9 μs t_rr and 2.0 μC Q_rr minimize dead-time losses and reduce EMI in self-driven synchronous rectifier implementations.
Thermally optimized TO-252	6.25 °C/W channel-to-case resistance enables 20 W continuous operation with only PCB copper area-no heatsink required.

Applications

AC Adapter Power Stage	Industrial SMPS Primary Switch
Use Scenario: 30–60 W universal-input AC/DC adapter for laptops and peripherals operating across 85–265 V_AC. IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) flyback converter. Use Value: 600 V rating avoids overvoltage stress during 300 V_DC surge testing; low Q_G enables stable 65 kHz operation with minimal gate drive loss.	Use Scenario: 100 W open-frame industrial power supply for PLC I/O modules requiring long-term reliability at 50°C ambient. IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter with fixed 100 kHz frequency. Use Value: R_DS(on) stability over temperature (±20% from −25°C to 125°C) maintains consistent efficiency across operating range.
LED Driver High-Voltage Switch	UPS Inverter Half-Bridge
Use Scenario: Constant-current LED driver for street lighting using buck-boost topology with 300 V_DC bus. IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into LED string via inductor charging phase. Use Value: Avalanche capability absorbs inductive kickback during forced commutation, eliminating need for external TVS diodes.	Use Scenario: Low-cost offline UPS with 500 VA output using half-bridge inverter stage feeding modified sine wave to battery backup load. IC Role / Device Role / Timing Role: Upper-leg switch in 50 Hz–1 kHz H-bridge driving transformer primary winding. Use Value: Body diode forward voltage of 0.9 V minimizes conduction loss during shoot-through prevention dead time.

AC Adapter Power Stage

Industrial SMPS Primary Switch

Use Scenario: 30–60 W universal-input AC/DC adapter for laptops and peripherals operating across 85–265 V_AC.

IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) flyback converter.

Use Value: 600 V rating avoids overvoltage stress during 300 V_DC surge testing; low Q_G enables stable 65 kHz operation with minimal gate drive loss.

Use Scenario: 100 W open-frame industrial power supply for PLC I/O modules requiring long-term reliability at 50°C ambient.

IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter with fixed 100 kHz frequency.

Use Value: R_DS(on) stability over temperature (±20% from −25°C to 125°C) maintains consistent efficiency across operating range.

LED Driver High-Voltage Switch

UPS Inverter Half-Bridge

Use Scenario: Constant-current LED driver for street lighting using buck-boost topology with 300 V_DC bus.

IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into LED string via inductor charging phase.

Use Value: Avalanche capability absorbs inductive kickback during forced commutation, eliminating need for external TVS diodes.

Use Scenario: Low-cost offline UPS with 500 VA output using half-bridge inverter stage feeding modified sine wave to battery backup load.

IC Role / Device Role / Timing Role: Upper-leg switch in 50 Hz–1 kHz H-bridge driving transformer primary winding.

Use Value: Body diode forward voltage of 0.9 V minimizes conduction loss during shoot-through prevention dead time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, R_DS(on) = 1.2 Ω @ 10 V, Q_G = 22 nC - lower R_DS(on) but higher gate charge and TO-220FP package.	Requires larger PCB footprint and higher gate drive current; better suited for <50 kHz continuous conduction mode.	Select when lower conduction loss dominates over switching loss and TO-220 mounting is acceptable.
IXTP50N10P	100 V, R_DS(on) = 0.022 Ω, Q_G = 45 nC - incompatible voltage rating; not suitable for 600 V applications.	Only viable in low-voltage DC-DC stages (e.g., post-regulator), not primary-side switching.	Reject for 2SK3113-Z-E1-AZ replacement; consider only for secondary-side synchronous rectification where voltage stress <100 V.

Compared with STP6NK60ZFP and IXTP50N10P, the 2SK3113-Z-E1-AZ offers optimal balance of 600 V capability, moderate R_DS(on), and low Q_G in a space-constrained TO-252 package-making it uniquely suitable for compact, cost-sensitive, high-input-voltage SMPS where thermal management relies on PCB copper rather than heatsinks.

Availability

2SK3113-Z-E1-AZ is available at Aetrix Electronics and suitable for AC adapter power stages, industrial SMPS primary switches, LED driver high-voltage switches, and UPS inverter half-bridges requiring stable component supply and long-lifecycle support.

Supply support for 2SK3113-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.

The 2SK3113-Z-E1-AZ belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for cost-effective, thermally efficient switching in universal-input offline power supplies.

FAQ

What is the maximum continuous drain current rating for the 2SK3113-Z-E1-AZ at 25°C case temperature?

The 2SK3113-Z-E1-AZ has a maximum continuous drain current (I_D(DC)) of ±2.0 A at T_C = 25°C. This rating assumes proper PCB thermal management-specifically mounting on a 40 mm × 40 mm × 1.6 mm glass epoxy board-as defined in the absolute maximum ratings table of the D13336EJ4V0DS datasheet. Exceeding this current without adequate heatsinking risks exceeding the 150°C channel temperature limit.

Does the 2SK3113-Z-E1-AZ include integrated gate protection?

Yes, the 2SK3113-Z-E1-AZ integrates a gate-to-source protection diode as shown in the equivalent circuit diagram. However, the datasheet explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." Therefore, while the internal diode guards against basic ESD, external Zener clamping (e.g., 18 V) remains mandatory for robust gate drive in noisy industrial environments.

Can the 2SK3113-Z-E1-AZ be used in avalanche mode repeatedly?

No-the 2SK3113-Z-E1-AZ is rated for single-pulse avalanche only, with E_AS = 2.7 mJ and I_AS = 2.0 A under specified test conditions (V_DD = 150 V, R_G = 25 Ω, starting T_ch = 25°C). Repeated avalanche operation is not characterized or guaranteed and may cause parametric shift or premature failure. Designers must ensure circuit conditions avoid repetitive avalanche by using appropriate snubbers or clamp circuits.

What is the typical reverse recovery charge (Q_rr) of the body diode in the 2SK3113-Z-E1-AZ?

The typical reverse recovery charge (Q_rr) of the intrinsic body diode in the 2SK3113-Z-E1-AZ is 2.0 μC, measured at I_F = 2.0 A, di/dt = 50 A/μs, and V_GS = 0 V. This value directly impacts switching loss during commutation in quasi-resonant or synchronous rectifier configurations and is confirmed in the Electrical Characteristics table of the D13336EJ4V0DS datasheet.

Is the 2SK3113-Z-E1-AZ RoHS compliant?

Yes, the 2SK3113-Z-E1-AZ conforms to the EU RoHS Directive, as confirmed by Renesas Electronics' environmental compliance documentation. The "-E1-AZ" suffix denotes lead-free (Pb-free) plating and RoHS-compliant packaging per Renesas' standard product marking convention introduced after April 2006, aligning with the August 2006 publication date of datasheet D13336EJ4V0DS.

2SK3113-Z-E1-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3113-Z-E1-AZ FAQ

1.How can I place an order for 2SK3113-Z-E1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3113-Z-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3113-Z-E1-AZ reliable?

The price and inventory of 2SK3113-Z-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3113-Z-E1-AZ is usually 5 days.

3.What payment methods are accepted for 2SK3113-Z-E1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3113-Z-E1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3113-Z-E1-AZ?

2SK3113-Z-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3113-Z-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3113-Z-E1-AZ?

For technical support, including 2SK3113-Z-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3113-Z-E1-AZ requirements.

6.How does Aetrix verify that 2SK3113-Z-E1-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3113-Z-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3113-Z-E1-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3113-Z-E1-AZ?

All 2SK3113-Z-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3113-Z-E1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3113-Z-E1-AZ part is unused and in its original packaging.

Return procedure for 2SK3113-Z-E1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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