Renesas 2SK3113-ZK-E2-AZ

Overview

2SK3113-ZK-E2-AZ from Renesas Electronics is an N-channel enhancement-mode DMOS power MOSFET designed for high-voltage switching applications. It delivers R_DS(on) = 4.4 Ω max at V_GS = 10 V and I_D = 1.0 A, supports 600 V V_DSS, and features low gate charge (Q_G = 9 nC typ.) for efficient hard-switching in offline AC-DC power supplies and DC-DC converters.

For engineers reviewing the 2SK3113-ZK-E2-AZ datasheet, 2SK3113-ZK-E2-AZ pinout, 2SK3113-ZK-E2-AZ application, or 2SK3113-ZK-E2-AZ equivalent, this device is selected for high-reliability, medium-power switching where avalanche ruggedness (E_AS = 2.7 mJ), ±30 V gate rating, and TO-252 (MP-3Z) surface-mount packaging are critical design requirements.

Technical Context

This MOSFET employs a planar DMOS structure optimized for high-voltage blocking and fast switching. Its gate threshold voltage (V_GS(off) = 2.5–3.5 V) ensures reliable turn-on with standard 10 V gate drivers, while its body diode exhibits t_rr = 0.9 μs and Q_rr = 2.0 μC under defined conditions - enabling use in quasi-resonant and flyback topologies without external snubbing in many cases.

The device's safe operating area (SOA) is characterized up to 10 ms pulse width with DC and pulsed current limits defined at T_C = 25°C. Thermal resistance R_th(ch-C) = 6.25°C/W and channel temperature limit of 150°C support thermally constrained PCB layouts using standard glass-epoxy mounting (40 mm × 40 mm × 1.6 mm).

Key Specifications

Pinout & Package

2SK3113-ZK-E2-AZ is housed in a TO-252 (MP-3Z) surface-mount package with exposed drain pad for thermal relief. The three-terminal configuration supports compact, automated assembly on FR-4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP6NK60ZFP and IXTP50N10P, the 2SK3113-ZK-E2-AZ offers optimal balance of voltage rating, gate drive efficiency, and surface-mount compatibility for medium-power offline converters - making it uniquely suited where 600 V capability, TO-252 footprint, and sub-10 nC gate charge are jointly required.

Availability

2SK3113-ZK-E2-AZ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial relay drivers, LED streetlight power supplies, and UPS inverter stages requiring stable component supply across multi-year production cycles.

Supply support for 2SK3113-ZK-E2-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.

The 2SK3113-ZK-E2-AZ belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for reliability-critical switching power conversion in standard-grade industrial and consumer equipment.

FAQ

What is the maximum continuous drain current rating for the 2SK3113-ZK-E2-AZ at 25°C case temperature?

The 2SK3113-ZK-E2-AZ has a maximum continuous drain current (I_D(DC)) rating of ±2.0 A at T_C = 25°C. This value assumes proper PCB thermal management per the datasheet condition: mounting on a 40 mm × 40 mm × 1.6 mm glass-epoxy board. At elevated case temperatures, derating applies - e.g., ~1.2 A at T_C = 100°C - as defined in the SOA curve. Always verify thermal design margins using R_th(ch-C) = 6.25°C/W.

Does the 2SK3113-ZK-E2-AZ include integrated gate protection?

Yes, the 2SK3113-ZK-E2-AZ integrates a gate-to-source protection diode as shown in its equivalent circuit diagram. This diode guards against electrostatic discharge (ESD) during handling but is not rated for sustained overvoltage events. Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." Therefore, for robust system-level protection, a discrete Zener clamp (e.g., 18 V) between gate and source remains necessary in production designs using the 2SK3113-ZK-E2-AZ.

Can the 2SK3113-ZK-E2-AZ be used in avalanche mode repeatedly?

No - the 2SK3113-ZK-E2-AZ is rated for single-pulse avalanche only, with specified parameters I_AS = 2.0 A and E_AS = 2.7 mJ under defined test conditions (V_DD = 150 V, R_G = 25 Ω, starting T_ch = 25°C). The datasheet does not characterize repetitive avalanche capability. For applications involving repeated inductive switching stress (e.g., motor phase control), derating or alternate devices qualified for repetitive avalanche should be selected instead of relying on the 2SK3113-ZK-E2-AZ.

What is the typical reverse recovery time of the body diode in the 2SK3113-ZK-E2-AZ?

The body diode reverse recovery time (t_rr) of the 2SK3113-ZK-E2-AZ is 0.9 μs under test conditions of I_F = 2.0 A, V_GS = 0 V, and di/dt = 50 A/μs. This value is measured with the MOSFET in its natural body diode configuration - not with external diodes - and reflects performance relevant to DCM flyback or synchronous rectification evaluation. Note that t_rr increases with rising channel temperature and forward current, as confirmed in the typical characteristics curves.

Is the 2SK3113-ZK-E2-AZ RoHS compliant and lead-free?

Yes, the 2SK3113-ZK-E2-AZ is RoHS compliant and lead-free. The part number suffix "-E2-AZ" follows Renesas' standard coding: "E2" denotes lead-free plating, and "AZ" indicates tape-and-reel packaging per JEDEC standards. This compliance is consistent with Renesas' environmental policy and EU RoHS Directive requirements. No exemptions apply; the device contains ≤0.1 wt% lead in solderable terminations and meets all restricted substance thresholds.