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Renesas 2SK3114-S17-AZ

Part No.:
2SK3114-S17-AZ
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SK3114-S17-AZ.pdf
Description:
POWER FIELD-EFFECT TRANSISTOR
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,000

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Product details

Overview

2SK3114-S17-AZ from Renesas Electronics is an N-channel enhancement-mode DMOS power MOSFET in an isolated TO-220 package, rated for 600 V drain-source voltage, 4.0 A DC drain current, and 2.2 Ω maximum on-resistance at VGS = 10 V. It delivers low gate charge (15 nC typ.) and avalanche-rated ruggedness for high-voltage switching in offline AC/DC power supplies and industrial adapters.

For engineers reviewing the 2SK3114-S17-AZ datasheet, 2SK3114-S17-AZ pinout, 2SK3114-S17-AZ application, or 2SK3114-S17-AZ equivalent, key selection criteria include its isolated TO-220 thermal performance (Rth(CH–C) = 4.17 °C/W), single-pulse avalanche energy (10.7 mJ), body diode reverse recovery characteristics (trr = 1.3 µs, Qrr = 4.3 µC), and gate voltage rating (±30 V).

Technical Context

The 2SK3114-S17-AZ employs a double-diffused MOS (DMOS) structure optimized for high-voltage switching with low conduction and switching losses. Its gate threshold voltage (VGS(off) = 2.5–3.5 V) ensures reliable turn-on under standard 10 V gate drive, while its forward transfer admittance (|yfs| = 1.0–50 S) supports stable current gain across temperature.

Designed for hard-switched topologies, it features fully characterized dynamic parameters including turn-on delay (12 ns), rise time (6 ns), turn-off delay (35 ns), and fall time (12 ns) under defined test conditions (VDD = 150 V, RG = 10 Ω). Its isolated TO-220 package enables direct heatsinking without additional insulation hardware.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - Supports primary-side switching in universal-input (85–265 VAC) offline SMPS without derating.
RDS(on) max2.2 Ω @ VGS = 10 V, ID = 2.0 A - Enables <10 W conduction loss at 4 A continuous, suitable for 50–100 W adapters.
QG typ15 nC @ VDD = 450 V - Reduces gate driver power demand and switching transition time in high-frequency designs.
EAS10.7 mJ - Withstands single-pulse inductive energy spikes up to 150 V × 4 A × 17.8 µs, enhancing system robustness.
trr / Qrr1.3 µs / 4.3 µC - Limits body diode reverse recovery loss during synchronous or quasi-resonant operation.
Rth(CH–C)4.17 °C/W - Allows 30 W dissipation at ≤75 °C case temperature, supporting compact heatsink integration.

Pinout & Package

2SK3114-S17-AZ uses the isolated TO-220 (MP-45F) package: metal tab (Drain) electrically isolated from leads, enabling direct mounting to grounded heatsinks without insulating pads. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control electrodeReceives 10 V logic-level gate drive; ±30 V absolute rating prevents ESD damage when used with external gate protection.
Pin 2 (Drain)High-voltage power terminalConnected to transformer primary or bus rail; isolated tab allows safe thermal coupling to chassis ground.
Pin 3 (Source)Reference node for gate driveServes as return path for load current and gate drive loop; must be routed with low inductance to minimize switching oscillation.

Key Features

FeatureDesign Value
Avalanche-rated ruggednessSingle-pulse IAS = 4.0 A and EAS = 10.7 mJ enable reliable operation under inductive fault conditions without external snubbers.
Low gate chargeQG = 15 nC reduces gate driver stress and improves efficiency in 50–100 kHz flyback and forward converters.
Isolated TO-220 packageElectrical isolation between Drain tab and leads eliminates need for insulating hardware, simplifying thermal design and reducing BOM cost.
Body diode with fast recoverytrr = 1.3 µs and Qrr = 4.3 µC minimize cross-conduction loss in quasi-resonant topologies and improve light-load efficiency.

Applications

AC/DC Adapter Power StageIndustrial Switching Power Supply

Use Scenario: 65 W universal-input adapter for industrial instrumentation with 230 VAC input surge tolerance.

IC Role / Device Role / Timing Role: Primary-side switching FET in discontinuous conduction mode (DCM) flyback converter operating at 65 kHz.

Use Value: 2.2 Ω RDS(on) limits conduction loss to <3.5 W at full load; isolated TO-220 enables direct heatsink mounting on metal enclosure.

Use Scenario: 100 W open-frame power supply for PLC I/O modules requiring 24 V/4 A output and EN61000-3-2 compliance.

IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter with 100 kHz switching frequency and zero-voltage switching (ZVS) assist.

Use Value: 15 nC QG and 12 ns td(on) support precise ZVS timing control; avalanche rating absorbs clamp circuit energy transients.

LED Driver Primary SwitchOffline Battery Charger Stage

Use Scenario: Constant-power LED driver for street lighting operating from 277 VAC line with 90% efficiency target.

IC Role / Device Role / Timing Role: High-side switch in critical conduction mode (CRM) boost PFC front-end stage.

Use Value: |yfs| = 50 S ensures stable current regulation across 0–125 °C; low Ciss = 550 pF minimizes capacitive turn-on loss.

Use Scenario: 48 V/5 A battery charger for telecom backup systems with wide AC input range (90–305 VAC).

IC Role / Device Role / Timing Role: Primary switch in LLC resonant half-bridge with integrated synchronous rectification.

Use Value: Body diode trr = 1.3 µs prevents shoot-through during dead-time; 600 V rating accommodates 305 VAC peak + margin without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP6NK60ZFP600 V, 5.5 A, RDS(on) = 1.2 Ω, QG = 22 nC, TO-220FP (non-isolated)Higher current rating but requires insulated mounting hardware; higher QG increases gate drive loss.Select when higher continuous current (5.5 A) is required and board layout allows isolation for non-isolated tab.
IXTP1R2N60P600 V, 1.2 A, RDS(on) = 6.5 Ω, QG = 8.5 nC, TO-220Lower gate charge but significantly higher on-resistance; not suitable for >2 A continuous loads.Select only for low-current (<1.5 A), ultra-low-QG applications where conduction loss is secondary to switching loss.

Compared with STP6NK60ZFP and IXTP1R2N60P, the 2SK3114-S17-AZ offers balanced conduction-switching trade-offs (2.2 Ω / 15 nC) and built-in isolation-critical for simplified thermal design in space-constrained industrial adapters where PCB real estate and assembly cost matter.

Availability

2SK3114-S17-AZ is available at Aetrix Electronics and suitable for industrial switching power supplies, AC/DC adapters, and LED driver primary stages requiring stable component supply and long-term manufacturability.

Supply support for 2SK3114-S17-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The 2SK3114-S17-AZ belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for rugged, cost-sensitive industrial power conversion where reliability under repetitive avalanche stress and thermal stability are essential.

FAQ

What is the maximum continuous drain current rating for the 2SK3114-S17-AZ at 25°C case temperature?

The 2SK3114-S17-AZ has a maximum continuous drain current (ID(DC)) of ±4.0 A at TC = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C per the datasheet's derating curve-e.g., ~2.0 A at TC = 100°C. The 2SK3114-S17-AZ must not exceed this limit to maintain safe channel temperature below 150°C.

Does the 2SK3114-S17-AZ have an integrated gate protection diode?

Yes-the 2SK3114-S17-AZ includes an internal gate-to-source protection diode, as shown in the equivalent circuit diagram. This diode guards against electrostatic discharge (ESD), but Renesas explicitly states that external gate protection remains necessary if transient voltages exceeding ±30 V may occur in the application. The 2SK3114-S17-AZ datasheet confirms this in the "Remark" section on page 7.

Can the 2SK3114-S17-AZ be used in avalanche mode repeatedly?

No-the 2SK3114-S17-AZ is rated for single-pulse avalanche only (EAS = 10.7 mJ, IAS = 4.0 A). The datasheet does not specify repetitive avalanche capability, and repeated operation in avalanche risks parametric shift or catastrophic failure. For designs requiring repetitive energy handling, a device with documented repetitive avalanche rating-such as certain STMicroelectronics or Infineon parts-should be selected instead of the 2SK3114-S17-AZ.

What is the typical gate-to-source threshold voltage range for the 2SK3114-S17-AZ?

Per the Electrical Characteristics table, the 2SK3114-S17-AZ has a gate-to-source cutoff voltage (VGS(off)) range of 2.5 V to 3.5 V, measured at VDS = 10 V and ID = 1 mA. This defines the minimum gate voltage needed to reliably turn the device on. The 2SK3114-S17-AZ achieves full enhancement at VGS ≥ 10 V, where RDS(on) is guaranteed ≤ 2.2 Ω.

Is the 2SK3114-S17-AZ RoHS compliant?

Yes-the 2SK3114-S17-AZ complies with the EU RoHS Directive. Renesas Electronics confirms environmental compliance in Note 10 of the datasheet, stating users must comply with applicable laws regulating controlled substances, and the company provides environmental data upon request. As a Renesas product manufactured post-2010 (following the NEC/Renesas merger), the 2SK3114-S17-AZ falls under Renesas' standardized RoHS-compliant manufacturing process.

2SK3114-S17-AZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SK3114-S17-AZ FAQ

1.How can I place an order for 2SK3114-S17-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3114-S17-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3114-S17-AZ reliable?

The price and inventory of 2SK3114-S17-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3114-S17-AZ is usually 5 days.

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Once your 2SK3114-S17-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3114-S17-AZ?

For technical support, including 2SK3114-S17-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3114-S17-AZ requirements.

6.How does Aetrix verify that 2SK3114-S17-AZ is sourced from the original manufacturer or authorized distributors?

All 2SK3114-S17-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3114-S17-AZ meets industry standards.

7.What is the process for return or replacement of 2SK3114-S17-AZ?

All 2SK3114-S17-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3114-S17-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3114-S17-AZ part is unused and in its original packaging.

Return procedure for 2SK3114-S17-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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