Renesas 2SK3115-AZ

Overview

2SK3115-AZ from Renesas Electronics is an N-channel enhancement-mode DMOS power MOSFET designed for high-voltage switching applications, featuring R_DS(on) = 1.2 Ω max at V_GS = 10 V and I_D = 3.0 A, 600 V V_DSS, ±30 V gate voltage rating, and 26 nC total gate charge. It is used in industrial AC adapters and offline switching power supplies requiring robust avalanche capability (E_AS = 24 mJ).

For engineers reviewing the 2SK3115-AZ datasheet, 2SK3115-AZ pinout, 2SK3115-AZ application, or 2SK3115-AZ equivalent, key selection criteria include its isolated TO-220 package, 6 A DC drain current rating, low Q_G/Q_GD ratio for fast switching, body diode reverse recovery time (t_rr = 1.4 µs), and channel temperature limit of 150°C.

Technical Context

The 2SK3115-AZ employs a vertical double-diffused MOS (DMOS) structure optimized for high-voltage blocking and low conduction loss. Its gate oxide design supports ±30 V V_GSS, while the integrated body diode exhibits controlled reverse recovery with Q_rr = 6.5 µC and t_rr = 1.4 µs under specified di/dt conditions.

Thermal performance is defined by R_th(ch–C) = 3.57°C/W and R_th(ch–A) = 62.5°C/W, enabling operation up to 150°C channel temperature. Avalanche ruggedness is validated per single-pulse test (I_AS = 6.0 A, E_AS = 24 mJ) with V_DD = 150 V, R_G = 25 Ω, and gate drive transition from 20 V to 0 V.

Key Specifications

Pinout & Package

2SK3115-AZ is housed in an isolated TO-220 (MP-45F) package with electrically insulated tab, enabling direct mounting to heatsinks without thermal pads or insulators. Pin 1 is Gate, Pin 2 is Drain (connected to tab), Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP6NK60ZFP and IRFBC40APBF, the 2SK3115-AZ offers balanced trade-offs: verified 24 mJ avalanche energy for robust fault tolerance, moderate 26 nC gate charge for efficient mid-frequency switching, and isolated TO-220 packaging that simplifies thermal management in dense industrial assemblies.

Availability

2SK3115-AZ is available at Aetrix Electronics and suitable for industrial power conversion, relay replacement, and offline LED driver applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for 2SK3115-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions for industrial and automotive markets.

The 2SK3115-AZ belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for industrial-grade switching power supplies, AC adapters, and solid-state relay replacements where reliability, avalanche ruggedness, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current rating for the 2SK3115-AZ at 25°C case temperature?

The 2SK3115-AZ has a maximum continuous drain current (I_D(DC)) rating of ±6.0 A at T_C = 25°C. This rating assumes proper heatsinking and is derated linearly above 25°C per the datasheet's total power dissipation curve. At higher case temperatures, the usable current drops significantly - for example, to approximately 3.5 A at T_C = 70°C - due to the 35 W total power dissipation limit and thermal resistance of 3.57°C/W from channel to case.

Does the 2SK3115-AZ have a fully characterized body diode, and what are its key parameters?

Yes, the 2SK3115-AZ includes a fully characterized intrinsic body diode. Key parameters include forward voltage V_F(S-D) = 1.0 V at I_F = 6.0 A and V_GS = 0 V, reverse recovery time t_rr = 1.4 µs, and reverse recovery charge Q_rr = 6.5 µC under di/dt = 50 A/µs. These values are measured with the device in its standard isolated TO-220 package and are essential for designing freewheeling paths in flyback or buck-boost converters.

Can the 2SK3115-AZ be used in avalanche mode, and what are the validated test conditions?

Yes, the 2SK3115-AZ is explicitly rated for single-pulse avalanche operation with I_AS = 6.0 A and E_AS = 24 mJ. Validation was performed under controlled conditions: starting channel temperature of 25°C, V_DD = 150 V, gate drive transition from 20 V to 0 V via R_G = 25 Ω, and inductive load testing. The device is not rated for repetitive avalanche; sustained operation in this mode requires careful thermal and stress analysis beyond datasheet limits.

What is the gate threshold voltage range for the 2SK3115-AZ, and how does it vary with temperature?

The gate threshold voltage (V_GS(off)) for the 2SK3115-AZ is specified as 2.5 V to 3.5 V at V_DS = 10 V and I_D = 1 mA. This parameter decreases with rising channel temperature - typical characterization shows ~3.2 V at 25°C, ~2.7 V at 75°C, and ~2.2 V at 125°C - enabling more predictable turn-on behavior across industrial temperature ranges but requiring gate drive headroom above 4 V for full enhancement at high temperatures.

Is the 2SK3115-AZ RoHS-compliant, and what is its quality grade classification?

Yes, the 2SK3115-AZ complies with EU RoHS Directive requirements, as confirmed by Renesas Electronics' environmental compliance documentation. Its quality grade is "Standard", meaning it is qualified for use in industrial applications including computers, office equipment, communications gear, test instruments, and industrial robots - but not for automotive, medical life-support, or aerospace systems unless separately qualified and approved by Renesas.