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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK3115B(1)-S32-AY

Name: 2SK3115B(1)-S32-AY
Brand: Renesas
SKU: 2SK3115B(1)-S32-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK3115B(1)-S32-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK3115B(1)-S32-AY.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

2SK3115B(1)-S32-AY from Renesas Electronics is an N-channel enhancement-mode DMOS power MOSFET designed for high-voltage switching applications. It delivers R_DS(on) = 1.2 Ω max at V_GS = 10 V and I_D = 3.0 A, supports V_DSS = 600 V, and features Q_G = 26 nC typical - enabling efficient operation in offline AC-DC adapters and industrial SMPS.

For engineers reviewing the 2SK3115B(1)-S32-AY datasheet, 2SK3115B(1)-S32-AY pinout, 2SK3115B(1)-S32-AY application, or 2SK3115B(1)-S32-AY equivalent, key selection criteria include avalanche energy rating (E_AS = 24 mJ), isolated TO-220 package thermal performance (R_th(ch–C) = 3.57 °C/W), and gate voltage tolerance (±30 V) for robust drive interface design.

Technical Context

This device employs a vertical double-diffused MOS (VDMOS) structure optimized for high-voltage blocking and low conduction loss. Its gate oxide thickness and channel geometry yield a gate threshold voltage V_GS(off) of 2.5–3.5 V and forward transfer admittance |y_fs| ≥ 2.0 S at I_D = 3.0 A, ensuring reliable turn-on under standard 10 V gate drive.

The integrated body diode exhibits t_rr = 1.4 µs and Q_rr = 6.5 µC under specified conditions (I_F = 6.0 A, di/dt = 50 A/µs, V_GS = 0 V), supporting hard-switched flyback and forward converter topologies where diode recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports primary-side switching in universal-input (85–265 VAC) offline power supplies without derating.
R_DS(on)	1.2 Ω max at V_GS = 10 V, I_D = 3.0 A - limits conduction loss to ≤10.8 W at full DC current, enabling compact heatsinking.
Q_G	26 nC typical at V_DD = 450 V - determines gate driver power requirement and switching speed trade-off in 50–100 kHz designs.
E_AS	24 mJ single-pulse avalanche energy - allows safe operation during transient overvoltage events like output short-circuit or transformer saturation.
t_r/t_f	12 ns / 15 ns - enables fast switching with minimal overlap loss when paired with appropriate gate resistance (e.g., R_G = 10 Ω).
C_iss	1100 pF - sets input capacitance load on gate driver; combined with Q_G, defines effective gate resistance for slew rate control.

Pinout & Package

2SK3115B(1)-S32-AY is housed in an isolated TO-220 (MP-45F) package with creepage/clearance enhanced for high-voltage isolation. The case is electrically isolated from all terminals, enabling direct mounting to heatsinks without insulating pads in grounded-source configurations.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; ±30 V absolute max rating requires clamping protection in noisy environments.
2 (Drain)	High-side current path	Connected to high-voltage DC bus (e.g., rectified AC line); must withstand 600 V blocking and handle pulsed currents up to 24 A.
3 (Source)	Reference node & return path	Serves as common reference for gate drive and current sensing; isolation allows source-referenced gate drive in high-side switch configurations.

Key Features

Feature	Design Value
Low gate charge	Q_G = 26 nC typical enables <50 ns total switching time with 10 Ω gate resistor, reducing switching losses in 65 kHz SMPS.
Avalanche-rated operation	E_AS = 24 mJ at T_ch = 25°C permits unclamped inductive switching without external snubbers in flyback transformers.
Isolated package	TO-220 with insulated tab eliminates need for mica washers or silicone pads, simplifying thermal design and improving long-term reliability.
Body diode with controlled recovery	t_rr = 1.4 µs and Q_rr = 6.5 µC support synchronous rectification replacement in low-power adapters without excessive ringing.

Applications

AC-DC Adapter Primary Switch	Industrial SMPS Power Stage
Use Scenario: 36 W universal-input offline adapter powering consumer electronics with no fan cooling. IC Role / Device Role / Timing Role: Main switching transistor in discontinuous conduction mode (DCM) flyback converter operating at 65 kHz. Use Value: R_DS(on) ≤ 1.2 Ω minimizes conduction loss at 3.0 A peak current, while Q_G = 26 nC ensures gate drive remains within capability of low-cost bipolar drivers.	Use Scenario: 120 W industrial control power supply requiring >100,000-hour MTBF and wide ambient temperature range (−25°C to +70°C). IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward converter with fixed 100 kHz frequency and synchronous secondary rectification. Use Value: Isolated TO-220 package enables direct bolt-down heatsinking to metal chassis, and E_AS = 24 mJ provides margin against transformer reset faults without additional protection circuitry.
LED Driver High-Voltage Switch	Motor Control Protection FET
Use Scenario: Constant-current LED driver for street lighting using boost topology with 300 V output bus. IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into output inductor; operates in critical conduction mode (CRM). Use Value: V_DSS = 600 V accommodates 300 V bus plus 100% surge margin, and C_iss = 1100 pF ensures stable gate drive timing across line cycle zero-crossings.	Use Scenario: Overcurrent protection switch in 24 V DC motor H-bridge, placed between bridge and battery to disconnect faulted loads. IC Role / Device Role / Timing Role: High-side load switch activated only during fault detection; normally off, rated for 6 A continuous DC current. Use Value: Low R_DS(on) = 1.2 Ω limits voltage drop to <7.2 V at 6 A, preserving motor bus voltage during normal operation while enabling fast turn-off (<100 ns) via gate discharge path.

AC-DC Adapter Primary Switch

Industrial SMPS Power Stage

Use Scenario: 36 W universal-input offline adapter powering consumer electronics with no fan cooling.

IC Role / Device Role / Timing Role: Main switching transistor in discontinuous conduction mode (DCM) flyback converter operating at 65 kHz.

Use Value: R_DS(on) ≤ 1.2 Ω minimizes conduction loss at 3.0 A peak current, while Q_G = 26 nC ensures gate drive remains within capability of low-cost bipolar drivers.

Use Scenario: 120 W industrial control power supply requiring >100,000-hour MTBF and wide ambient temperature range (−25°C to +70°C).

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward converter with fixed 100 kHz frequency and synchronous secondary rectification.

Use Value: Isolated TO-220 package enables direct bolt-down heatsinking to metal chassis, and E_AS = 24 mJ provides margin against transformer reset faults without additional protection circuitry.

LED Driver High-Voltage Switch

Motor Control Protection FET

Use Scenario: Constant-current LED driver for street lighting using boost topology with 300 V output bus.

IC Role / Device Role / Timing Role: High-side switch controlling energy transfer into output inductor; operates in critical conduction mode (CRM).

Use Value: V_DSS = 600 V accommodates 300 V bus plus 100% surge margin, and C_iss = 1100 pF ensures stable gate drive timing across line cycle zero-crossings.

Use Scenario: Overcurrent protection switch in 24 V DC motor H-bridge, placed between bridge and battery to disconnect faulted loads.

IC Role / Device Role / Timing Role: High-side load switch activated only during fault detection; normally off, rated for 6 A continuous DC current.

Use Value: Low R_DS(on) = 1.2 Ω limits voltage drop to <7.2 V at 6 A, preserving motor bus voltage during normal operation while enabling fast turn-off (<100 ns) via gate discharge path.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, R_DS(on) = 1.2 Ω, Q_G = 29 nC, TO-220FP (non-isolated)	Requires insulating hardware for heatsink mounting; slightly higher gate charge increases driver loss.	Preferred where cost sensitivity outweighs isolation requirement and PCB layout allows insulation.
IXTP50N10P	100 V, R_DS(on) = 0.027 Ω, Q_G = 45 nC, TO-220	Lower voltage rating restricts use to low-input DC-DC stages; lower R_DS(on) benefits high-current, low-V_DS applications.	Only suitable for sub-100 V systems; not interchangeable in 600 V primary-side roles.

Compared with STP6NK60ZFP and IXTP50N10P, the 2SK3115B(1)-S32-AY uniquely combines 600 V rating, isolated TO-220 packaging, and 26 nC gate charge - making it optimal for space-constrained, high-reliability offline adapters where thermal coupling and voltage isolation are co-constrained.

Availability

2SK3115B(1)-S32-AY is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and motor protection circuits requiring stable component supply and long-lifecycle support.

Supply support for 2SK3115B(1)-S32-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SK3115 series belongs to Renesas' industrial-grade discrete power MOSFET product line, engineered specifically for high-voltage switching in offline power conversion systems with emphasis on avalanche ruggedness and thermal reliability.

FAQ

What is the maximum continuous drain current rating for the 2SK3115B(1)-S32-AY at 25°C case temperature?

The 2SK3115B(1)-S32-AY has a maximum continuous drain current I_D(DC) of ±6.0 A at T_C = 25°C. This rating assumes proper heatsinking and accounts for the device's R_th(ch–C) = 3.57 °C/W thermal resistance. At elevated case temperatures, derating is required per the datasheet's power dissipation curve - e.g., at T_C = 100°C, usable current drops to approximately 3.5 A to maintain T_ch ≤ 150°C. The 2SK3115B(1)-S32-AY must not exceed this limit under steady-state conditions.

Does the 2SK3115B(1)-S32-AY have an integrated body diode, and what are its key recovery characteristics?

Yes, the 2SK3115B(1)-S32-AY includes an inherent parasitic body diode between source and drain. Its reverse recovery time t_rr is 1.4 µs and reverse recovery charge Q_rr is 6.5 µC under test conditions of I_F = 6.0 A, di/dt = 50 A/µs, and V_GS = 0 V. These values indicate moderate recovery speed suitable for DCM flyback and forward converters but not recommended for high-frequency synchronous rectification without external optimization. The 2SK3115B(1)-S32-AY body diode is not rated for continuous bidirectional conduction.

Can the 2SK3115B(1)-S32-AY be used in avalanche mode, and what are the validated limits?

Yes, the 2SK3115B(1)-S32-AY is fully specified for single-pulse avalanche operation with I_AS = 6.0 A and E_AS = 24 mJ at starting channel temperature of 25°C, V_DD = 150 V, and R_G = 25 Ω. These parameters are measured under controlled lab conditions and define the safe unclamped inductive switching envelope. Repeated avalanche stress is not guaranteed, and the 2SK3115B(1)-S32-AY must be operated within these limits to avoid parametric shift or failure.

What is the gate-to-source voltage rating for the 2SK3115B(1)-S32-AY, and why is it important for drive circuit design?

The 2SK3115B(1)-S32-AY has a gate-to-source voltage rating V_GSS of ±30 V. Exceeding this rating risks irreversible gate oxide breakdown, especially during transient events like ESD or gate driver overshoot. Drive circuits must incorporate clamping (e.g., Zener diodes) or active regulation to ensure gate voltage stays within −30 V to +30 V. This specification directly impacts gate driver selection and PCB layout - underscoring why the 2SK3115B(1)-S32-AY requires careful attention to gate loop inductance and decoupling.

How does the isolated TO-220 package of the 2SK3115B(1)-S32-AY affect thermal and electrical design compared to standard TO-220?

The isolated TO-220 (MP-45F) package of the 2SK3115B(1)-S32-AY electrically separates the drain-connected tab from the leads, allowing direct mechanical mounting to grounded heatsinks without insulating hardware. This improves thermal transfer efficiency (R_th(ch–C) = 3.57 °C/W) and reduces assembly cost and failure risk from insulator degradation. Unlike standard TO-220, the 2SK3115B(1)-S32-AY eliminates creepage concerns in high-voltage layouts - a critical advantage in compact AC-DC adapters where spacing constraints would otherwise require larger PCB footprints.

2SK3115B(1)-S32-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK3115B(1)-S32-AY FAQ

1.How can I place an order for 2SK3115B(1)-S32-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3115B(1)-S32-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3115B(1)-S32-AY reliable?

The price and inventory of 2SK3115B(1)-S32-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3115B(1)-S32-AY is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3115B(1)-S32-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3115B(1)-S32-AY?

2SK3115B(1)-S32-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3115B(1)-S32-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3115B(1)-S32-AY?

For technical support, including 2SK3115B(1)-S32-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3115B(1)-S32-AY requirements.

6.How does Aetrix verify that 2SK3115B(1)-S32-AY is sourced from the original manufacturer or authorized distributors?

All 2SK3115B(1)-S32-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3115B(1)-S32-AY meets industry standards.

7.What is the process for return or replacement of 2SK3115B(1)-S32-AY?

All 2SK3115B(1)-S32-AY units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3115B(1)-S32-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3115B(1)-S32-AY part is unused and in its original packaging.

Return procedure for 2SK3115B(1)-S32-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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