Renesas 2SK3116(0)-Z-E1-AZ

Overview

2SK3116(0)-Z-E1-AZ from Renesas Electronics is an N-channel enhancement-mode power MOSFET in TO-220AB package, designed for high-voltage switching applications including offline AC-DC adapters and flyback/forward converters. It delivers 600 V drain-source breakdown voltage, 1.2 Ω max R_DS(on) at V_GS = 10 V and I_D = 3.75 A, 26 nC typical total gate charge, and rated avalanche energy of 37.5 mJ.

For engineers reviewing the 2SK3116(0)-Z-E1-AZ datasheet, 2SK3116(0)-Z-E1-AZ pinout, 2SK3116(0)-Z-E1-AZ application, or 2SK3116(0)-Z-E1-AZ equivalent, key selection criteria include its 600 V V_DSS, low Q_G for fast switching, robust single-pulse avalanche capability, and TO-220AB thermal performance with 70 W P_T2 at T_C = 25°C.

Technical Context

This DMOS FET employs a planar vertical structure optimized for high-voltage blocking and low conduction loss. Its gate threshold voltage (V_GS(off)) ranges from 2.5 V to 3.5 V, enabling reliable turn-on with standard 10 V gate drive while maintaining low leakage (I_DSS ≤ 100 µA at 600 V).

Switching behavior is characterized by 18 ns turn-on delay, 15 ns rise time, 50 ns turn-off delay, and 15 ns fall time under standardized test conditions (V_DD = 150 V, I_D = 3.75 A, R_G = 10 Ω). The body diode exhibits 1.6 µs reverse recovery time and 7.6 µC Q_rr, supporting moderate-frequency hard-switched topologies.

Key Specifications

Pinout & Package

2SK3116(0)-Z-E1-AZ is housed in a TO-220AB package with isolated metal tab (Drain-connected fin), offering mechanical robustness and direct heatsink mounting. Thermal resistance from channel to case is 1.79°C/W, enabling efficient power dissipation when mounted to aluminum heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP6NK60ZFP and FQP6N60C, the 2SK3116(0)-Z-E1-AZ offers superior avalanche ruggedness (37.5 mJ) and tighter R_DS(on) tolerance (0.9–1.2 Ω), making it more suitable for cost-sensitive, thermally constrained offline converters requiring field reliability without added protection components.

Availability

2SK3116(0)-Z-E1-AZ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial power supplies, and LED driver power stages requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SK3116(0)-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.

The 2SK3116(0)-Z-E1-AZ belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for cost-effective, high-reliability switching in offline AC-DC conversion systems.

FAQ

What is the maximum continuous drain current rating for the 2SK3116(0)-Z-E1-AZ?

The 2SK3116(0)-Z-E1-AZ has a maximum continuous drain current (I_D(DC)) of ±7.5 A at T_A = 25°C. This rating assumes adequate heatsinking and derates linearly above 25°C ambient per the datasheet's derating curve. In practice, sustained operation near this limit requires careful thermal design due to its 1.2 Ω R_DS(on) and 1.79°C/W channel-to-case thermal resistance. Always verify junction temperature using actual board-level thermal measurements.

Does the 2SK3116(0)-Z-E1-AZ have avalanche capability, and how is it specified?

Yes, the 2SK3116(0)-Z-E1-AZ is fully rated for single-pulse avalanche operation with I_AS = 7.5 A and E_AS = 37.5 mJ under defined test conditions (V_DD = 150 V, R_G = 25 Ω, starting T_ch = 25°C). This specification means the device can safely absorb inductive energy spikes without failure, reducing or eliminating the need for external snubber networks in flyback and forward converters. The 2SK3116(0)-Z-E1-AZ datasheet includes detailed test circuit diagrams and waveforms validating this capability.

What is the gate threshold voltage range for the 2SK3116(0)-Z-E1-AZ, and why does it matter?

The gate threshold voltage (V_GS(off)) for the 2SK3116(0)-Z-E1-AZ is specified from 2.5 V to 3.5 V at I_D = 1 mA and V_DS = 10 V. This range ensures consistent turn-on behavior with standard 10 V gate drivers while providing noise immunity against spurious gate signals below ~2 V. A well-defined threshold supports reliable operation in variable-line applications and simplifies gate drive design-no negative bias is required, and logic-level drivers are insufficient due to the minimum 2.5 V threshold.

Can the 2SK3116(0)-Z-E1-AZ be used in place of the 2SK3116 without modification?

Yes, the 2SK3116(0)-Z-E1-AZ is a Renesas-qualified variant of the base 2SK3116, sharing identical electrical specifications, TO-220AB package dimensions, pinout, and thermal characteristics. The suffix "(0)-Z-E1-AZ" denotes tape-and-reel packaging, RoHS-compliant plating, and enhanced quality screening per Renesas' standard process-no PCB or schematic changes are needed when substituting the 2SK3116(0)-Z-E1-AZ for the original 2SK3116 in existing designs.

What are the key thermal parameters that impact heatsink selection for the 2SK3116(0)-Z-E1-AZ?

For the 2SK3116(0)-Z-E1-AZ, the critical thermal parameters are R_th(ch-C) = 1.79°C/W (channel-to-case) and maximum T_ch = 150°C. To maintain safe operation at 70 W dissipation, the total thermal path-from channel to ambient-must limit temperature rise to ≤125°C above ambient (150°C − 25°C). This requires a heatsink with R_th(C-A) ≤ 1.5°C/W when combined with interface material and mounting pressure. The metal tab (Pin 2/4) must be electrically isolated unless the heatsink shares the drain potential.