Renesas 2SK3116(1)-ZK-E2-AZ
- Part No.:
- 2SK3116(1)-ZK-E2-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK3116(1)-ZK-E2-AZ.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

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Inventory:18,400
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Product details
Overview
2SK3116(1)-ZK-E2-AZ from Renesas Electronics is an N-channel enhancement-mode DMOS power MOSFET designed for high-voltage switching applications including AC adapters and offline SMPS. It features 600 V VDSS, 1.2 Ω max RDS(on) at VGS = 10 V and ID = 3.75 A, 26 nC typical total gate charge, avalanche-rated (EAS = 37.5 mJ), and TO-220AB package with isolated drain tab.
For engineers reviewing the 2SK3116(1)-ZK-E2-AZ datasheet, 2SK3116(1)-ZK-E2-AZ pinout, 2SK3116(1)-ZK-E2-AZ application, or 2SK3116(1)-ZK-E2-AZ equivalent, key selection criteria include its 600 V blocking capability, low QG/RDS(on) ratio for hard-switched converters, body diode recovery performance (trr = 1.6 µs), and thermal resistance (Rth(ch–C) = 1.79 °C/W) in TO-220AB mounting.
Technical Context
This device operates as a unidirectional high-side or low-side switch in flyback, forward, and resonant converter topologies. Its gate threshold voltage (VGS(off) = 2.5–3.5 V) enables standard 10 V gate drive compatibility, while its low Ciss (1100 pF) and Crss (20 pF) support fast switching with minimal Miller-induced oscillation risk.
The integrated body diode exhibits 1.0 V forward voltage at 7.5 A and controlled reverse recovery (Qrr = 7.6 µC, di/dt = 50 A/µs), making it suitable for non-synchronous rectification where diode conduction occurs during dead time. Avalanche ruggedness is validated under single-pulse inductive load conditions (IAS = 7.5 A, EAS = 37.5 mJ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports 400 VAC input designs with ≥2× safety margin against line transients |
| RDS(on) max | 1.2 Ω @ VGS = 10 V, ID = 3.75 A - determines conduction loss in continuous-current operation |
| QG typ | 26 nC @ VDD = 450 V - sets gate driver current requirement and switching loss trade-off |
| EAS | 37.5 mJ - enables robust operation under inductive turn-off stress without external snubbers |
| trr | 1.6 µs @ IF = 7.5 A - defines minimum dead time needed to avoid shoot-through in half-bridge configurations |
| Rth(ch–C) | 1.79 °C/W - allows 70 W dissipation at TC = 25 °C, critical for heatsink sizing |
| ID(DC) | ±7.5 A - maximum continuous drain current limited by package thermal capacity |
Pinout & Package
2SK3116(1)-ZK-E2-AZ is housed in a TO-220AB (MP-25) package with electrically isolated drain tab (pin 2 and pin 4 share drain connection). The case serves as the drain terminal and must be mounted to a heatsink with appropriate insulation when used in high-side configurations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level drive; ±30 V absolute max rating prevents gate oxide damage |
| 2 (Drain) | Main current output | Connected to high-voltage rail; tab (pin 4) is same node - requires isolation in PCB layout |
| 3 (Source) | Reference and return path | Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current |
| 4 (Fin/Drain) | Thermal and electrical drain extension | Electrically identical to pin 2; provides mechanical interface for heatsink attachment |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge | 26 nC typical enables efficient 100–300 kHz switching with <1 W gate driver loss |
| Avalanche energy rating | 37.5 mJ validated single-pulse withstand ensures reliability in unclamped inductive switching |
| Body diode softness | Controlled reverse recovery (Qrr = 7.6 µC) reduces EMI and voltage overshoot during freewheeling |
| High VDSS / RDS(on) ratio | 600 V breakdown with 1.2 Ω on-resistance balances voltage margin and conduction efficiency |
| TO-220AB thermal performance | Rth(ch–C) = 1.79 °C/W supports 70 W continuous dissipation with modest heatsinking |
Applications
| AC Adapter Primary Switch | Industrial Flyback PSU |
|---|---|
Use Scenario: 90–264 VAC input, 12–24 VDC output, 30–60 W isolated AC/DC adapter for consumer electronics. IC Role / Device Role / Timing Role: Main high-side switching element in discontinuous conduction mode (DCM) flyback converter. Use Value: 600 V VDSS accommodates 385 VDC bulk voltage plus 100 V transient margin; low QG minimizes driver losses at 65 kHz. | Use Scenario: 3-phase industrial control power supply with universal input and reinforced isolation. IC Role / Device Role / Timing Role: Primary-side power switch in 100 kHz fixed-frequency flyback delivering 15 V/2 A auxiliary bias rails. Use Value: Avalanche rating eliminates need for clamping circuits during transformer leakage energy discharge; TO-220AB mount simplifies heatsink integration in DIN-rail enclosures. |
| LED Driver Bulk Switch | UPS Inverter Stage |
Use Scenario: Constant-current LED driver for street lighting using boost PFC + buck DC/DC architecture. IC Role / Device Role / Timing Role: Boost switch in active PFC stage operating at 50–70 kHz. Use Value: Low RDS(on) reduces conduction loss in high-duty-cycle PFC; body diode trr ensures clean zero-current switching transitions. | Use Scenario: Offline UPS with 230 VAC input and 24 VDC battery backup, requiring bidirectional energy flow. IC Role / Device Role / Timing Role: Low-side switch in half-bridge inverter driving transformer-isolated DC/AC conversion. Use Value: Isolated TO-220AB drain tab enables safe high-side floating gate drive; 7.5 A ID(DC) supports 500 VA output with 1.5× surge margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | 600 V, 0.75 Ω RDS(on), 29 nC QG, TO-220FP (full-pack) | Lower RDS(on) but higher QG; no isolated drain tab | Preferred where lower conduction loss dominates and heatsink isolation is not required |
| IXTP50N10P | 100 V, 0.022 Ω RDS(on), 42 nC QG, TO-220 | Lower voltage rating; unsuitable for 400 VDC bus applications | Only viable in low-input-voltage DC/DC stages downstream of primary regulation |
Compared with STP6NK60ZFP and IXTP50N10P, the 2SK3116(1)-ZK-E2-AZ offers superior avalanche ruggedness and drain-isolation for high-side use, trading off slightly higher RDS(on) for proven reliability in cost-sensitive offline SMPS designs.
Availability
2SK3116(1)-ZK-E2-AZ is available at Aetrix Electronics and suitable for AC adapters, industrial flyback PSUs, LED driver bulk switches, and UPS inverter stages requiring stable component supply and long-term obsolescence management.
Supply support for 2SK3116(1)-ZK-E2-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.
The 2SK3116 belongs to Renesas' legacy high-voltage discrete MOSFET product line, engineered specifically for reliable, cost-effective switching in offline AC/DC power conversion up to 100 W.
FAQ
What is the maximum continuous drain current rating for the 2SK3116(1)-ZK-E2-AZ?
The 2SK3116(1)-ZK-E2-AZ has a maximum continuous drain current (ID(DC)) of ±7.5 A at TA = 25 °C. This rating assumes adequate heatsinking and is derated linearly above 25 °C ambient per the datasheet's derating curve. At case temperature TC = 25 °C, the device supports 70 W dissipation, enabling higher current in thermally optimized layouts.
Does the 2SK3116(1)-ZK-E2-AZ have avalanche capability, and how is it specified?
Yes, the 2SK3116(1)-ZK-E2-AZ is fully rated for single-pulse avalanche operation with IAS = 7.5 A and EAS = 37.5 mJ under defined test conditions (VDD = 150 V, RG = 25 Ω, starting Tch = 25 °C). This ruggedness allows safe operation during inductive turn-off events without external clamping components in properly designed flyback or forward converters.
What is the gate threshold voltage range for the 2SK3116(1)-ZK-E2-AZ, and why does it matter?
The gate threshold voltage (VGS(off)) for the 2SK3116(1)-ZK-E2-AZ is specified as 2.5–3.5 V at VDS = 10 V and ID = 1 mA. This range ensures reliable turn-on with standard 10 V gate drivers while preventing accidental conduction from noise or leakage currents below 2.5 V - critical for stable operation in high-noise industrial power environments.
Can the 2SK3116(1)-ZK-E2-AZ be used in synchronous rectification topologies?
No, the 2SK3116(1)-ZK-E2-AZ is not recommended for synchronous rectification due to its relatively slow body diode recovery (trr = 1.6 µs) and lack of optimized reverse recovery characteristics. Its design targets primary-side switching where the body diode conducts only during brief dead-time intervals, not continuous forward conduction like secondary-side SR FETs.
What package type does the 2SK3116(1)-ZK-E2-AZ use, and is the drain electrically isolated?
The 2SK3116(1)-ZK-E2-AZ uses the TO-220AB (MP-25) package with pins 2 (Drain) and 4 (Fin/Drain) electrically connected and isolated from the source and gate terminals. This isolation allows direct mounting to a grounded heatsink without additional insulation when used in low-side configurations, or with insulating pads in high-side applications.
2SK3116(1)-ZK-E2-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK3116(1)-ZK-E2-AZ FAQ
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The price and inventory of 2SK3116(1)-ZK-E2-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3116(1)-ZK-E2-AZ is usually 5 days.
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6.How does Aetrix verify that 2SK3116(1)-ZK-E2-AZ is sourced from the original manufacturer or authorized distributors?
All 2SK3116(1)-ZK-E2-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3116(1)-ZK-E2-AZ meets industry standards.
7.What is the process for return or replacement of 2SK3116(1)-ZK-E2-AZ?
All 2SK3116(1)-ZK-E2-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3116(1)-ZK-E2-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3116(1)-ZK-E2-AZ part is unused and in its original packaging.
Return procedure for 2SK3116(1)-ZK-E2-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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