My Inquiry
My Account
Renesas 2SK3116B(1)-ZK-E2-AY
- Part No.:
- 2SK3116B(1)-ZK-E2-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SK3116B(1)-ZK-E2-AY.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:11,200
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SK3116B(1)-ZK-E2-AY from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications, featuring RDS(on) = 1.2 Ω max at VGS = 10 V and ID = 3.75 A, VDSS = 600 V, QG = 22 nC typ., and avalanche-rated operation in AC adapters and offline SMPS primary-side switches.
For engineers reviewing the 2SK3116B(1)-ZK-E2-AY datasheet, 2SK3116B(1)-ZK-E2-AY pinout, 2SK3116B(1)-ZK-E2-AY application, or 2SK3116B(1)-ZK-E2-AY equivalent, this page delivers verified package mapping (TO-263/MP-25ZK), validated terminal roles, confirmed avalanche energy (EAS = 37.5 mJ), diode recovery specs (trr = 390 ns), and real-world switching timing (td(off) = 29 ns).
Technical Context
This device operates as a unidirectional high-side or low-side switch in hard-switched flyback and forward converters. Its gate threshold voltage (VGS(off) = 2.5–3.5 V) enables standard 10 V gate drive compatibility, while its low Ciss (1090 pF) and Crss (53 pF) support fast, efficient switching at up to 150 kHz under typical conditions.
The integrated body diode exhibits VF(S-D) = 0.93 V at IF = 7.5 A and trr = 390 ns with Qrr = 2000 nC, enabling moderate-frequency freewheeling in non-synchronous topologies. Avalanche ruggedness (IAS = 7.5 A, EAS = 37.5 mJ) supports single-pulse inductive fault tolerance without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - supports 400 V DC bus designs with ≥50% safety margin for surge and ringing. |
| RDS(on) | 1.2 Ω max at VGS = 10 V, ID = 3.75 A - limits conduction loss to ≤16.9 W at full rated current. |
| QG | 22 nC typ. - enables <500 ns total switching transition time with 50 Ω gate driver impedance. |
| EAS | 37.5 mJ - withstands single inductive energy dump up to L × I²/2 = 37.5 mJ without failure. |
| trr | 390 ns - defines minimum off-time in non-synchronous rectification before secondary-side turn-on. |
| PT2 | 70 W at TC = 25°C - requires heatsink with ≤1.79°C/W thermal resistance for continuous 7.5 A operation. |
| VGSS | ±30 V - allows robust gate drive with ±15 V bias or bootstrap circuits using standard level-shifters. |
Pinout & Package
2SK3116B(1)-ZK-E2-AY uses the TO-263 (MP-25ZK) surface-mount package with exposed drain tab for thermal and electrical connection. The 4-pin configuration includes Gate, Drain, Source, and integral metal fin (Drain-connected heat slug).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives voltage-controlled signal; requires ≤±30 V swing and low-impedance drive to achieve specified QG-based switching speed. |
| 2 (Drain) | High-voltage power input | Connects to primary-side DC bus or transformer drain node; electrically tied to exposed metal tab for thermal path and current return. |
| 3 (Source) | Power return reference | Serves as local ground reference for gate drive and current sensing; must be routed with minimal inductance to avoid oscillation. |
| 4 (Fin/Drain) | Thermal & power interface | Exposed copper pad soldered to PCB copper pour; provides primary thermal path and carries full drain current to system ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate charge | QG = 22 nC enables efficient 100+ kHz switching with minimal gate driver power loss and reduced EMI. |
| Avalanche-rated operation | Single-pulse EAS = 37.5 mJ eliminates need for external clamping in flyback snubberless designs. |
| Fast body diode recovery | trr = 390 ns and Qrr = 2000 nC reduce reverse-recovery losses and associated voltage spikes in non-synchronous topologies. |
| High VDSS rating | 600 V breakdown supports universal-input (85–265 VAC) offline SMPS without derating concerns in 400 V DC link systems. |
| TO-263 thermal design | Exposed drain tab with Rth(ch-C) = 1.79°C/W enables compact heatsinking on 2 oz. copper PCBs without discrete heatsinks. |
Applications
| AC Adapter Primary Switch | Industrial Flyback PSU |
|---|---|
Use Scenario: 65 W universal-input AC adapter for laptops and monitors operating at 65–100 kHz. IC Role / Device Role / Timing Role: Primary-side high-side switch in discontinuous conduction mode (DCM) flyback converter. Use Value: Low QG and 600 V rating enable reliable operation across full input range with minimal gate drive overhead and no external avalanche protection. |
Use Scenario: 120 W open-frame industrial power supply for PLC I/O modules with wide ambient temperature range. IC Role / Device Role / Timing Role: Main switching element in fixed-frequency current-mode flyback with overvoltage/overcurrent protection. Use Value: Avalanche ruggedness ensures survival during output short-circuit events; TO-263 package simplifies thermal management in sealed enclosures. |
| LED Driver Bulk Switch | Offline Charger Stage |
Use Scenario: Constant-current LED driver for street lighting with 300–450 V DC bus derived from bridge rectifier. IC Role / Device Role / Timing Role: High-side switch controlling energy transfer to LED string via transformer-coupled topology. Use Value: RDS(on) ≤ 1.2 Ω minimizes conduction loss at 7.5 A peak, supporting >90% efficiency in 150 W designs. |
Use Scenario: Primary switch in multi-output offline charger for cordless power tools with dual 12 V/20 V outputs. IC Role / Device Role / Timing Role: Hard-switched power transistor in quasi-resonant forward converter with synchronous rectification on secondary. Use Value: Fast td(off) = 29 ns and low Crss allow precise dead-time control, reducing cross-conduction losses in high-efficiency designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | RDS(on) = 1.2 Ω (same), but QG = 27 nC (23% higher); TO-220FP package with insulated tab. | Lacks avalanche rating (no EAS spec); requires external clamp for inductive fault handling. | Preferred where isolation from heatsink is mandatory and avalanche stress is absent. |
| IXTP50N10P | VDSS = 100 V only; RDS(on) = 0.022 Ω; QG = 42 nC - unsuitable for 400 V bus but superior for low-voltage high-current stages. | Designed for 12–48 V DC-DC, not AC/DC primary-side use. | Only viable in secondary-side synchronous rectification or low-voltage auxiliary supplies. |
Compared with STP6NK60ZFP and IXTP50N10P, the 2SK3116B(1)-ZK-E2-AY uniquely combines 600 V rating, certified avalanche capability, and TO-263 thermal performance - making it irreplaceable in compact, high-reliability offline SMPS where board space, fault robustness, and thermal density are jointly constrained.
Availability
2SK3116B(1)-ZK-E2-AY is available at Aetrix Electronics and suitable for AC adapters, industrial flyback PSUs, LED drivers, and offline battery chargers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for 2SK3116B(1)-ZK-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and consumer applications.
The 2SK3116B(1)-ZK-E2-AY belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for reliability-critical offline switching power supplies in standard-grade applications including office equipment and industrial automation.
FAQ
What is the maximum continuous drain current rating for the 2SK3116B(1)-ZK-E2-AY?
The 2SK3116B(1)-ZK-E2-AY has a DC drain current rating of ±7.5 A at TA = 25°C. However, practical continuous current is thermally limited by PCB layout and heatsinking - with PT2 = 70 W at TC = 25°C, sustained 7.5 A operation requires case temperature maintenance below 25°C, typically achieved via TO-263 copper pour and forced airflow. Derating applies above 25°C per the published transient thermal curve.
Does the 2SK3116B(1)-ZK-E2-AY have a built-in body diode, and what are its key parameters?
Yes, the 2SK3116B(1)-ZK-E2-AY integrates a source-drain body diode with VF(S-D) = 0.93 V at IF = 7.5 A and reverse recovery time trr = 390 ns under specified test conditions (IF = 7.5 A, di/dt = 50 A/μs, VGS = 0 V). Its Qrr = 2000 nC directly impacts switching loss in non-synchronous topologies and must be accounted for in gate drive sizing and snubber design.
Can the 2SK3116B(1)-ZK-E2-AY be used in avalanche mode, and what are the safe operating limits?
Yes, the 2SK3116B(1)-ZK-E2-AY is fully rated for single-pulse avalanche operation with IAS = 7.5 A and EAS = 37.5 mJ at Tch = 25°C, VDD = 150 V, RG = 25 Ω, and VGS transitioning from 20 V to 0 V. Repeated avalanche is not characterized; designers must ensure pulse conditions remain within the published SOA curve and limit duty cycle to prevent cumulative channel heating.
What is the gate threshold voltage range for the 2SK3116B(1)-ZK-E2-AY, and how does it affect drive requirements?
The 2SK3116B(1)-ZK-E2-AY has a gate threshold voltage VGS(off) of 2.5–3.5 V at ID = 1 mA and VDS = 10 V. This ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity against spurious turn-on from dv/dt coupling. A minimum VGS of 10 V is required to achieve the specified RDS(on) ≤ 1.2 Ω, and gate drive must sustain ≥10 V under load to avoid linear-mode conduction loss.
Is the 2SK3116B(1)-ZK-E2-AY RoHS compliant, and what does the "-E2" suffix indicate?
Yes, the 2SK3116B(1)-ZK-E2-AY is RoHS compliant - the "-E2" suffix explicitly denotes lead-free termination per JEDEC J-STD-609, with no Pb in external electrodes. This aligns with EU RoHS Directive 2011/65/EU and supports environmentally compliant manufacturing without requiring special Pb-free reflow profiles beyond standard SnAgCu specifications.
2SK3116B(1)-ZK-E2-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SK3116B(1)-ZK-E2-AY FAQ
1.How can I place an order for 2SK3116B(1)-ZK-E2-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK3116B(1)-ZK-E2-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK3116B(1)-ZK-E2-AY reliable?
The price and inventory of 2SK3116B(1)-ZK-E2-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3116B(1)-ZK-E2-AY is usually 5 days.
3.What payment methods are accepted for 2SK3116B(1)-ZK-E2-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3116B(1)-ZK-E2-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK3116B(1)-ZK-E2-AY?
2SK3116B(1)-ZK-E2-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK3116B(1)-ZK-E2-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK3116B(1)-ZK-E2-AY?
For technical support, including 2SK3116B(1)-ZK-E2-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3116B(1)-ZK-E2-AY requirements.
6.How does Aetrix verify that 2SK3116B(1)-ZK-E2-AY is sourced from the original manufacturer or authorized distributors?
All 2SK3116B(1)-ZK-E2-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3116B(1)-ZK-E2-AY meets industry standards.
7.What is the process for return or replacement of 2SK3116B(1)-ZK-E2-AY?
All 2SK3116B(1)-ZK-E2-AY units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3116B(1)-ZK-E2-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK3116B(1)-ZK-E2-AY part is unused and in its original packaging.
Return procedure for 2SK3116B(1)-ZK-E2-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SK3116B(1)-ZK-E2-AY Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
