Renesas 2SK3116B-S19-AY

Overview

2SK3116B-S19-AY from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications, featuring 600 V V_DSS, 1.2 Ω R_DS(on) (max) at V_GS = 10 V and I_D = 3.75 A, 22 nC total gate charge, ±30 V gate voltage rating, and TO-220AB (MP-25) package. It is used in AC adapters and offline switching power supplies where fast turn-on/turn-off and avalanche ruggedness are required.

For engineers reviewing the 2SK3116B-S19-AY datasheet, 2SK3116B-S19-AY pinout, 2SK3116B-S19-AY application, or 2SK3116B-S19-AY equivalent, key selection criteria include its 600 V blocking capability, low Q_G for efficient gate drive, avalanche-rated operation up to 37.5 mJ, body diode recovery performance (t_rr = 390 ns), and thermal resistance (R_th(ch-C) = 1.79 °C/W) in TO-220AB mounting.

Technical Context

This device employs a planar vertical DMOS structure optimized for high-voltage hard-switching. Its gate threshold voltage (V_GS(off) = 2.5–3.5 V) ensures reliable turn-on with standard 10 V logic-level drive, while its low C_iss (1090 pF) and C_rss (53 pF) support high-frequency operation up to several hundred kHz in flyback and forward converters.

The integrated body diode exhibits 0.93 V forward voltage at 7.5 A and 390 ns reverse recovery time under specified test conditions (I_F = 7.5 A, di/dt = 50 A/μs), enabling self-commutated operation in quasi-resonant topologies without external snubbing in many designs.

Key Specifications

Pinout & Package

2SK3116B-S19-AY is housed in a TO-220AB (MP-25) package with isolated metal tab (Drain-connected fin). The case is electrically connected to Drain, requiring insulation when mounted to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP6NK60ZFP and FQP6N60C, the 2SK3116B-S19-AY offers a balanced trade-off: moderate R_DS(on) with verified avalanche energy rating and lower Q_G than STP6NK60ZFP, making it preferable for cost-sensitive yet reliability-critical offline SMPS where both efficiency and ruggedness matter.

Availability

2SK3116B-S19-AY is available at Aetrix Electronics and suitable for AC adapters, industrial flyback converters, LED drivers, and UPS inverters requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for 2SK3116B-S19-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and mixed-signal solutions.

The 2SK3116B-S19-AY belongs to Renesas' legacy high-voltage power MOSFET product line, engineered for reliability in offline switching power conversion applications including consumer and industrial AC/DC adapters and auxiliary power supplies.

FAQ

What is the maximum continuous drain current rating for the 2SK3116B-S19-AY at 25°C ambient?

The 2SK3116B-S19-AY has a DC drain current rating of ±7.5 A at T_A = 25°C. However, practical continuous current is thermally limited by package and heatsinking-its 1.5 W total power dissipation at T_A = 25°C implies ~1.2 A sustained in free-air operation. With proper TO-220AB heatsinking (T_C ≤ 100°C), the 2SK3116B-S19-AY can sustain ~5.5 A continuously based on its 70 W P_T2 rating and R_th(ch-C) = 1.79 °C/W.

Does the 2SK3116B-S19-AY have a fully characterized avalanche rating, and what does it mean for circuit design?

Yes, the 2SK3116B-S19-AY is fully rated for single-pulse avalanche with I_AS = 7.5 A and E_AS = 37.5 mJ under defined test conditions (V_DD = 150 V, R_G = 25 Ω, starting T_ch = 25°C). This means the 2SK3116B-S19-AY can safely absorb inductive energy from transformer leakage or wiring inductance without failure, allowing simplified flyback designs without external RCD clamp networks in many cases.

What is the gate threshold voltage range for the 2SK3116B-S19-AY, and how does it affect drive circuit compatibility?

The 2SK3116B-S19-AY has a gate threshold voltage V_GS(off) of 2.5–3.5 V at I_D = 1 mA. This ensures full enhancement with standard 5 V or 10 V logic-level gate drivers. Its relatively narrow threshold window improves consistency across temperature and unit-to-unit variation, reducing risk of partial turn-on in high-noise environments-critical for stable operation of the 2SK3116B-S19-AY in compact, high-density power supplies.

Can the 2SK3116B-S19-AY be used in synchronous rectification topologies?

No-the 2SK3116B-S19-AY is optimized as a primary-side high-voltage switch, not a low-side synchronous rectifier. Its body diode has t_rr = 390 ns and V_F(S-D) = 0.93 V at 7.5 A, which is too slow and lossy for secondary-side synchronous rectification. For that role, dedicated low-V_F, low-Q_rr MOSFETs like the Si2302 or IPP040N04LG are preferred. The 2SK3116B-S19-AY remains appropriate only for primary-side switching.

Is the 2SK3116B-S19-AY RoHS compliant, and what does the "-AY" suffix indicate?

Yes, the "-AY" suffix in 2SK3116B-S19-AY explicitly denotes lead-free (Pb-free) construction per RoHS Directive, confirmed in the ordering information table. The device uses matte tin plating on external electrodes and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount reflow. No exemptions apply-the 2SK3116B-S19-AY is fully RoHS 2011/65/EU compliant.