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Renesas 2SK3116B-ZK-E1-AY

Part No.:
2SK3116B-ZK-E1-AY
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SK3116B-ZK-E1-AY.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
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Payment
Shipping:
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Inventory:16,800

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Product details

Overview

2SK3116B-ZK-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-voltage switching applications including AC adapters and offline SMPS. It features a 600 V drain-source breakdown voltage, 1.2 Ω maximum RDS(on) at VGS = 10 V and ID = 3.75 A, 22 nC typical total gate charge, and TO-263 (MP-25ZK) surface-mount package with integral heatsink tab.

For engineers reviewing the 2SK3116B-ZK-E1-AY datasheet, 2SK3116B-ZK-E1-AY pinout, 2SK3116B-ZK-E1-AY application, or 2SK3116B-ZK-E1-AY equivalent, key selection criteria include avalanche energy rating (37.5 mJ), diode reverse recovery time (390 ns), and safe operating area under pulse conditions - all critical for flyback and resonant converter designs requiring robust unclamped inductive switching capability.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its gate threshold voltage range (2.5–3.5 V) enables compatibility with standard 5 V and 10 V logic-level drivers, while its ±30 V gate-source rating supports robust gate drive margin against transients.

The integrated body diode exhibits 0.93 V forward voltage at 7.5 A and 390 ns reverse recovery time, enabling use in synchronous rectification or freewheeling roles where controlled diode conduction is required. Its 8.6 nC QGD and 11 ns rise time indicate fast, controllable turn-on behavior suitable for 100–500 kHz switching frequencies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 600 V - Supports primary-side switching in universal-input (85–265 VAC) offline converters without derating.
RDS(on) max 1.2 Ω @ VGS = 10 V, ID = 3.75 A - Enables <1.5 W conduction loss at 3.75 A DC, suitable for ≤40 W power stages.
QG typ 22 nC - Low gate drive power requirement; compatible with low-current gate drivers like TC4420 or UCC3732x.
EAS 37.5 mJ - Rated single-pulse avalanche energy allows reliable operation during overvoltage transients in inductive loads.
trr 390 ns - Fast body diode recovery reduces switching losses and EMI in discontinuous conduction mode (DCM) flyback.
PT2 70 W @ TC = 25°C - High case-power dissipation supports direct PCB copper pour or external heatsink mounting in TO-263 package.
ID(pulse) ±30 A - Supports short-duration current surges during startup or overload, critical for peak-current-mode control loops.

Pinout & Package

2SK3116B-ZK-E1-AY uses the TO-263 (MP-25ZK) surface-mount package with exposed drain tab for thermal and electrical connection. The package has three signal terminals plus an integral metal fin acting as the drain terminal and heatsink interface.

Pin/Terminal Circuit Role Design Meaning
1 (Gate) Control electrode Receives gate drive signal; requires <30 V absolute max swing and low-impedance path to minimize ringing and overshoot.
2 (Drain) Main high-side current path Connected to high-voltage rail; electrically and thermally tied to exposed metal tab - must be isolated from other layers unless designated as ground-referenced.
3 (Source) Reference node for gate drive and current sensing Serves as return path for load current and gate drive loop; layout must minimize inductance to preserve switching speed and stability.
4 (Fin/Drain) Thermal & electrical extension of Drain Exposed copper pad on underside; soldered directly to PCB copper pour or heatsink - provides dominant thermal path (Rth(ch-C) = 1.79°C/W).

Key Features

Feature Design Value
Low gate charge (22 nC) Reduces driver power consumption and gate drive loop losses, enabling efficient operation at >200 kHz without excessive driver heating.
Avalanche-rated (37.5 mJ) Eliminates need for external snubbers in clamp-free flyback or forward converters subjected to leakage inductance spikes.
Fast body diode (trr = 390 ns) Minimizes reverse recovery losses and associated voltage overshoot during hard commutation, improving efficiency in DCM operation.
High VDSS (600 V) Permits direct use in 400 V DC bus applications (e.g., PFC output) and 265 VAC input systems with margin for line surges per IEC 61000-4-5.
TO-263 thermal performance (Rth(ch-C) = 1.79°C/W) Enables >50 W continuous power handling with minimal external heatsinking when mounted on ≥2 oz copper with 4 cm² thermal pad.

Applications

AC Adapter Primary Switch Flyback Converter Main Switch

Use Scenario: 36 W universal-input (90–264 VAC) wall adapter powering consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-side switch in discontinuous conduction mode (DCM) flyback topology, driven by UC3842-based controller.

Use Value: 600 V VDSS and 37.5 mJ EAS ensure reliable operation during 100% line surge testing; 1.2 Ω RDS(on) limits conduction loss to <1.2 W at full load.

Use Scenario: Isolated 24 V/2 A industrial power supply with reinforced insulation for PLC I/O modules.

IC Role / Device Role / Timing Role: Main switching element in quasi-resonant flyback with valley-switching control (e.g., NCP1377).

Use Value: 390 ns trr and low QGD enable clean zero-voltage switching transitions; TO-263 package simplifies thermal management on compact 4-layer PCB.

LED Driver High-Voltage Switch Offline SMPS Auxiliary Supply

Use Scenario: Constant-current LED driver for street lighting using 48 V string at 700 mA, powered from 230 VAC mains.

IC Role / Device Role / Timing Role: Primary-side switch in buck-boost-derived offline topology with active PFC pre-regulator.

Use Value: 600 V rating accommodates PFC output ripple; 22 nC QG ensures minimal gate drive loss at 65 kHz switching frequency.

Use Scenario: Standby auxiliary supply (12 V/100 mA) for smart meter main board, operating continuously during meter sleep mode.

IC Role / Device Role / Timing Role: Self-oscillating flyback switch in low-cost, low-component-count auxiliary supply (e.g., using TNY274 secondary-side feedback).

Use Value: Low IDSS (100 μA max) minimizes no-load input power; TO-263 package allows direct thermal coupling to chassis for long-term reliability at 70°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP6NK60ZFP 600 V, 0.75 Ω RDS(on), 25 nC QG, TO-220FP package Higher conduction efficiency but slower switching (tr = 25 ns vs. 11 ns); no integrated avalanche rating published Preferred for lower-loss, lower-frequency (<100 kHz) applications where thermal mass of TO-220FP suffices.
IXTP50N10P 100 V, 0.022 Ω RDS(on), 42 nC QG, TO-220 package Lower voltage rating prohibits direct replacement; higher QG increases gate drive demand Only suitable in low-voltage secondary-side synchronous rectifier or DC-DC stage - not a functional substitute for primary-side 600 V switching.

Compared with STP6NK60ZFP and IXTP50N10P, the 2SK3116B-ZK-E1-AY offers superior avalanche ruggedness and faster switching at 600 V, making it uniquely suited for compact, high-reliability offline flyback designs where transient immunity and layout-constrained thermal performance are critical.

Availability

2SK3116B-ZK-E1-AY is available at Aetrix Electronics and suitable for AC adapters, offline flyback converters, and LED driver primary-side switching requiring stable component supply, RoHS-compliant packaging, and long-lifecycle support for industrial and consumer programs.

Supply support for 2SK3116B-ZK-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SK3116B-ZK-E1-AY belongs to Renesas' legacy high-voltage power MOSFET product line, engineered specifically for reliable, high-efficiency switching in cost-sensitive offline power conversion systems targeting Standard-grade applications.

FAQ

What is the maximum continuous drain current rating for the 2SK3116B-ZK-E1-AY?

The 2SK3116B-ZK-E1-AY has a DC drain current rating of ±7.5 A at TA = 25°C. However, practical continuous current is limited by thermal design: with proper PCB copper pour on the TO-263 drain tab, sustained operation up to 4.5 A is achievable at 70°C ambient. Always verify junction temperature using Rth(ch-A) = 83.3°C/W and actual power dissipation in the 2SK3116B-ZK-E1-AY's application.

Does the 2SK3116B-ZK-E1-AY have a specified avalanche energy rating?

Yes, the 2SK3116B-ZK-E1-AY is fully rated for unclamped inductive switching with a single-pulse avalanche energy (EAS) of 37.5 mJ at VDD = 150 V, starting Tch = 25°C, and RG = 25 Ω. This specification is measured and guaranteed per JEDEC JESD24-11, confirming ruggedness for flyback transformer leakage spike absorption without external snubbers in the 2SK3116B-ZK-E1-AY's intended use cases.

What is the gate threshold voltage range for the 2SK3116B-ZK-E1-AY?

The 2SK3116B-ZK-E1-AY has a gate threshold voltage (VGS(off)) range of 2.5 V to 3.5 V, defined at VDS = 10 V and ID = 1 mA. This ensures reliable turn-on with standard 5 V logic-level drivers and compatibility with PWM controllers such as UC3842 or TL494, while maintaining noise immunity against spurious gate triggering in the 2SK3116B-ZK-E1-AY's high-noise power stage environment.

Can the 2SK3116B-ZK-E1-AY be used in synchronous rectification applications?

No - the 2SK3116B-ZK-E1-AY is optimized as a primary-side high-voltage switch, not a low-side synchronous rectifier. Its body diode forward voltage (0.93 V at 7.5 A) and reverse recovery time (390 ns) are significantly higher than dedicated SR MOSFETs. For secondary-side synchronous rectification, use devices like IRF7832 or SiR872DP, not the 2SK3116B-ZK-E1-AY.

What is the thermal resistance from channel to ambient for the 2SK3116B-ZK-E1-AY?

The 2SK3116B-ZK-E1-AY has a transient thermal resistance Rth(ch-A) of 83.3°C/W for a 10 ms pulse, per the datasheet's transient thermal impedance curve. For steady-state operation, effective Rth(ch-A) depends entirely on PCB layout: with 4 cm² of 2 oz copper connected to the TO-263 drain tab, typical values range from 40–60°C/W. Always calculate worst-case Tj using actual power and measured thermal resistance in the final 2SK3116B-ZK-E1-AY layout.

2SK3116B-ZK-E1-AY Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SK3116B-ZK-E1-AY FAQ

1.How can I place an order for 2SK3116B-ZK-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK3116B-ZK-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK3116B-ZK-E1-AY reliable?

The price and inventory of 2SK3116B-ZK-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK3116B-ZK-E1-AY is usually 5 days.

3.What payment methods are accepted for 2SK3116B-ZK-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK3116B-ZK-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK3116B-ZK-E1-AY?

2SK3116B-ZK-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK3116B-ZK-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK3116B-ZK-E1-AY?

For technical support, including 2SK3116B-ZK-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK3116B-ZK-E1-AY requirements.

6.How does Aetrix verify that 2SK3116B-ZK-E1-AY is sourced from the original manufacturer or authorized distributors?

All 2SK3116B-ZK-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK3116B-ZK-E1-AY meets industry standards.

7.What is the process for return or replacement of 2SK3116B-ZK-E1-AY?

All 2SK3116B-ZK-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with 2SK3116B-ZK-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK3116B-ZK-E1-AY part is unused and in its original packaging.

Return procedure for 2SK3116B-ZK-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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