Renesas 2SK3140-02-E

Overview

2SK3140-02-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drive circuits, featuring R_DS(on) = 6 mΩ typ. at V_GS = 10 V, 60 V V_DSS, and 60 A continuous drain current - optimized for low-loss operation in industrial power supplies.

For engineers reviewing the 2SK3140-02-E datasheet, 2SK3140-02-E pinout, 2SK3140-02-E application, or 2SK3140-02-E equivalent, this device is selected for high-current, medium-voltage switching where gate drive compatibility with 5 V logic, fast turn-on/turn-off times (t_d(on) = 60 ns, t_f = 320 ns), and robust avalanche energy rating (E_AR = 214 mJ) are critical design requirements.

Technical Context

This MOSFET employs a planar vertical DMOS structure optimized for low conduction loss and controlled switching behavior. Its gate threshold voltage (V_GS(off) = 1.0–2.5 V) enables reliable enhancement-mode operation, while the 7100 pF input capacitance (C_iss) and 125 nC total gate charge (Q_g) define its drive strength requirements for hard-switched topologies.

The device integrates a body-drain diode with V_DF = 1.0 V at 60 A and t_rr = 80 ns under di/dt = 50 A/µs, supporting synchronous rectification and freewheeling in buck and half-bridge configurations. Thermal resistance θ_ch-c = 3.57°C/W (case-to-channel) supports stable operation up to T_ch = 150°C.

Key Specifications

Pinout & Package

2SK3140-02-E is housed in the TO-220CFM (RENESAS code PRSS0003AE-A) package - a through-hole, insulated-tab variant of TO-220 with integrated mounting hole and creepage-enhanced isolation for high-voltage safety compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 60 V N-channel MOSFET applications.

Compared with STP60NF06 and IRFZ44NPBF, the 2SK3140-02-E delivers superior conduction efficiency (6 mΩ vs. ≥10 mΩ), certified insulation for high-side grounding flexibility, and higher avalanche ruggedness - making it preferred for industrial-grade 48 V power conversion where reliability and thermal margin are prioritized over minimal BOM cost.

Availability

2SK3140-02-E is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drives, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for 2SK3140-02-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SK3140-02-E belongs to Renesas' legacy high-power discrete MOSFET product line, engineered specifically for ruggedized industrial power switching applications demanding high current, medium voltage, and repeatable avalanche tolerance.

FAQ

What is the maximum continuous drain current rating for the 2SK3140-02-E?

The 2SK3140-02-E has a continuous drain current (I_D) rating of 60 A at case temperature T_c = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature - dropping to approximately 30 A at T_c = 100°C per the thermal derating curve in the official Renesas datasheet. The 2SK3140-02-E must be operated within these limits to ensure long-term reliability and avoid thermal runaway.

Does the 2SK3140-02-E support 5 V logic-level gate drive?

Yes, the 2SK3140-02-E is explicitly characterized for 4 V gate drive compatibility: its R_DS(on) is specified as 8.0 mΩ max at V_GS = 4 V and I_D = 30 A. This allows direct interfacing with standard 5 V TTL/CMOS outputs without gate driver ICs, though optimal performance (6 mΩ typ.) is achieved at 10 V. The 2SK3140-02-E gate threshold voltage range of 1.0–2.5 V further ensures clean turn-on with 5 V logic margins.

What is the avalanche energy rating of the 2SK3140-02-E and how is it tested?

The 2SK3140-02-E is rated for 214 mJ of single-pulse avalanche energy (E_AR) at T_ch = 25°C with R_g ≥ 50 Ω. This value is measured using the standardized avalanche test circuit defined in the datasheet - applying V_DD = 25 V, L = 100 µH, and I_AP = 50 A with controlled gate resistance. The 2SK3140-02-E's 214 mJ rating confirms its ability to safely absorb inductive switching energy in motor drive and relay-driving applications without failure.

Is the 2SK3140-02-E packaged in an insulated TO-220 variant?

Yes, the 2SK3140-02-E uses the TO-220CFM package (RENESAS code PRSS0003AE-A), which features an electrically insulated metal tab - enabling direct mounting to a heatsink without requiring insulating washers or pads. This insulation meets reinforced isolation requirements for high-side switching in grounded-source topologies. The 2SK3140-02-E's package dimensions and creepage distances comply with JEITA standards for industrial safety.

What is the typical body diode forward voltage of the 2SK3140-02-E and under what conditions is it specified?

The 2SK3140-02-E body diode forward voltage (V_DF) is 1.0 V typical at I_F = 60 A and V_GS = 0 V, as confirmed in the Electrical Characteristics table. This low forward drop minimizes conduction loss during freewheeling operation in buck converters and half-bridge motor drives. The 2SK3140-02-E's body diode also exhibits t_rr = 80 ns under di/dt = 50 A/µs, supporting efficient high-frequency commutation without excessive ringing or loss.